Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 21

TPC8092,LQ(S

Wahanga Tapeke: 100135

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J36FS,LF

Wahanga Tapeke: 126552

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 330mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3J35CT,L3F

Wahanga Tapeke: 5771

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4V, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V,

Momotae

Toshiba Semiconductor and Storage

SSM3K15ACT,L3F

Wahanga Tapeke: 154142

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TPC8129,LQ(S

Wahanga Tapeke: 141142

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J56ACT,L3F

Wahanga Tapeke: 107046

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 390 mOhm @ 800mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPN6R003NL,LQ

Wahanga Tapeke: 195389

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 13.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K324R,LF

Wahanga Tapeke: 151670

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM6H19NU,LF

Wahanga Tapeke: 184800

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 8V, Rds Kei (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V,

Momotae

Toshiba Semiconductor and Storage

TPC6111(TE85L,F,M)

Wahanga Tapeke: 154704

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPN8R903NL,LQ

Wahanga Tapeke: 183096

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K2615TU,LF

Wahanga Tapeke: 7271

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 3.3V, 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K15CT(TPL3)

Wahanga Tapeke: 112077

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TPN14006NH,L1Q

Wahanga Tapeke: 180682

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6J207FE,LF

Wahanga Tapeke: 104477

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 251 mOhm @ 650mA, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K56MFV,L3F

Wahanga Tapeke: 128522

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPN22006NH,LQ

Wahanga Tapeke: 147480

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6.5V, 10V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN1600ANH,L1Q

Wahanga Tapeke: 143024

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K345R,LF

Wahanga Tapeke: 112097

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3J117TU,LF

Wahanga Tapeke: 180597

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 117 mOhm @ 1A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN4R203NC,L1Q

Wahanga Tapeke: 167458

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 11.5A, 10V,

Momotae