Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 21

TK10E60W,S1VX

Wahanga Tapeke: 23805

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

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Toshiba Semiconductor and Storage

TK33S10N1Z,LQ

Wahanga Tapeke: 104550

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.7 mOhm @ 16.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J35CTC,L3F

Wahanga Tapeke: 145639

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TK11A60D(STA4,Q,M)

Wahanga Tapeke: 30899

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K2615R,LF

Wahanga Tapeke: 135583

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 3.3V, 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK6A60W,S4VX

Wahanga Tapeke: 36641

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 3.1A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6J511NU,LF

Wahanga Tapeke: 145260

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), Rds Kei (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V,

Momotae

Toshiba Semiconductor and Storage

TPWR8004PL,L1Q

Wahanga Tapeke: 40033

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.8 mOhm @ 50A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK13A55DA(STA4,QM)

Wahanga Tapeke: 28847

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 6.3A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK13E25D,S1X(S

Wahanga Tapeke: 36030

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK12A55D(STA4,Q,M)

Wahanga Tapeke: 29048

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 570 mOhm @ 6A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK8A60W,S4VX

Wahanga Tapeke: 31030

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK25V60X,LQ

Wahanga Tapeke: 8177

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 135 mOhm @ 7.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK19A45D(STA4,Q,M)

Wahanga Tapeke: 22520

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK14A45D(STA4,Q,M)

Wahanga Tapeke: 27275

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A, Rds Kei (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK20E60W,S1VX

Wahanga Tapeke: 16879

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK10J80E,S1E

Wahanga Tapeke: 26795

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK13A45D(STA4,Q,M)

Wahanga Tapeke: 33491

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 460 mOhm @ 6.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J356R,LF

Wahanga Tapeke: 178382

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK25E60X,S1X

Wahanga Tapeke: 16545

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK31V60X,LQ

Wahanga Tapeke: 28818

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 9.4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK13A50D(STA4,Q,M)

Wahanga Tapeke: 27289

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK25E60X5,S1X

Wahanga Tapeke: 15899

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J15FV,L3F

Wahanga Tapeke: 186662

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

SSM3J133TU,LF

Wahanga Tapeke: 139050

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TK7J90E,S1E

Wahanga Tapeke: 24719

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK18A50D(STA4,Q,M)

Wahanga Tapeke: 23408

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK16G60W,RVQ

Wahanga Tapeke: 5861

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK72E12N1,S1X

Wahanga Tapeke: 35805

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 120V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 36A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK14A45DA(STA4,QM)

Wahanga Tapeke: 30502

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.5A, Rds Kei (Max) @ Id, Vgs: 410 mOhm @ 6.8A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK7A65D(STA4,Q,M)

Wahanga Tapeke: 37304

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 980 mOhm @ 3.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK12A80W,S4X

Wahanga Tapeke: 21241

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK12A45D(STA4,Q,M)

Wahanga Tapeke: 36978

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK12E60W,S1VX

Wahanga Tapeke: 26976

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK10A55D(STA4,Q,M)

Wahanga Tapeke: 35872

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 720 mOhm @ 5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN3R704PL,L1Q

Wahanga Tapeke: 106820

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 40A, 10V,

Momotae