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Transistors - FETs, MOSFETs - Huinga

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  • Transistors - FETs, MOSFETs - Huinga
TPCL4202(TE85L,F)
Toshiba Semiconductor and Storage

TPCL4202(TE85L,F)

Wahanga Tapeke: 2949

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Momotae
TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8304(TE85L,F,M

Wahanga Tapeke: 2938

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Momotae
SSM6L13TU(T5L,F,T)
Toshiba Semiconductor and Storage

SSM6L13TU(T5L,F,T)

Wahanga Tapeke: 2912

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 1.8V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA (Ta), Rds Kei (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6N48FU,RF(D
Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

Wahanga Tapeke: 2967

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Rds Kei (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Momotae
SSM6N68NU,LF
Toshiba Semiconductor and Storage

SSM6N68NU,LF

Wahanga Tapeke: 16268

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.8V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Rds Kei (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6N35AFU,LF
Toshiba Semiconductor and Storage

SSM6N35AFU,LF

Wahanga Tapeke: 9923

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Momotae
SSM6N42FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

Wahanga Tapeke: 2976

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6N815R,LF
Toshiba Semiconductor and Storage

SSM6N815R,LF

Wahanga Tapeke: 9939

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Rds Kei (Max) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 100µA,

Momotae
SSM6L35FE,LM
Toshiba Semiconductor and Storage

SSM6L35FE,LM

Wahanga Tapeke: 172252

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180mA, 100mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6N67NU,LF
Toshiba Semiconductor and Storage

SSM6N67NU,LF

Wahanga Tapeke: 9963

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.8V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Rds Kei (Max) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6N35AFE,LF
Toshiba Semiconductor and Storage

SSM6N35AFE,LF

Wahanga Tapeke: 13256

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Momotae
SSM6P35FE,LM
Toshiba Semiconductor and Storage

SSM6P35FE,LM

Wahanga Tapeke: 173905

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

Wahanga Tapeke: 13232

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.7V @ 100µA,

Momotae
SSM6N37CTD(TPL3)
Toshiba Semiconductor and Storage

SSM6N37CTD(TPL3)

Wahanga Tapeke: 2957

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P41FE(TE85L,F)

Wahanga Tapeke: 13283

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 720mA, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

Wahanga Tapeke: 3098

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 4.5A, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Momotae
SSM6N357R,LF
Toshiba Semiconductor and Storage

SSM6N357R,LF

Wahanga Tapeke: 16211

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 650mA (Ta), Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Momotae
SSM6P35FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

Wahanga Tapeke: 121978

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

Wahanga Tapeke: 156233

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180mA, 100mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6L61NU,LF
Toshiba Semiconductor and Storage

SSM6L61NU,LF

Wahanga Tapeke: 154751

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A,

Momotae
SSM6N48FU,RF
Toshiba Semiconductor and Storage

SSM6N48FU,RF

Wahanga Tapeke: 3013

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Momotae
SSM6N7002BFU,LF
Toshiba Semiconductor and Storage

SSM6N7002BFU,LF

Wahanga Tapeke: 154781

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Momotae
SSM6N61NU,LF
Toshiba Semiconductor and Storage

SSM6N61NU,LF

Wahanga Tapeke: 117701

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
SSM6P49NU,LF
Toshiba Semiconductor and Storage

SSM6P49NU,LF

Wahanga Tapeke: 154268

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Momotae
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

Wahanga Tapeke: 9999

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Momotae
SSM6L36FE,LM
Toshiba Semiconductor and Storage

SSM6L36FE,LM

Wahanga Tapeke: 107404

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA, 330mA, Rds Kei (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae
TPCP8203(TE85L,F)
Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

Wahanga Tapeke: 2780

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae
SSM6N7002BFE(T5L,F
Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

Wahanga Tapeke: 2844

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Momotae
TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

Wahanga Tapeke: 2801

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae
TPC8213-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8213-H(TE12LQ,M

Wahanga Tapeke: 2813

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Momotae
TPC8208(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8208(TE12L,Q)

Wahanga Tapeke: 2694

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Momotae
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

Wahanga Tapeke: 2756

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Momotae
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

Wahanga Tapeke: 2781

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Momotae
TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage

TPCP8401(TE85L,F)

Wahanga Tapeke: 3345

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, 5.5A, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Momotae
TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

Wahanga Tapeke: 2829

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Momotae
TPC8207(TE12L)
Toshiba Semiconductor and Storage

TPC8207(TE12L)

Wahanga Tapeke: 2650

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Momotae