Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

TPCA8010-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8010-H(TE12L,Q

Wahanga Tapeke: 6033

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V,

Momotae

TPCA8009-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8009-H(TE12L,Q

Wahanga Tapeke: 9563

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V,

Momotae

TPCA8016-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8016-H(TE12LQM

Wahanga Tapeke: 9528

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 13A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J355R,LF

Wahanga Tapeke: 128788

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 30.1 mOhm @ 4A, 4.5V,

Momotae

TPCA8007-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8007-H(TE12L,Q

Wahanga Tapeke: 9600

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 10A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6J512NU,LF

Wahanga Tapeke: 193227

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 8V, Rds Kei (Max) @ Id, Vgs: 16.2 mOhm @ 4A, 8V,

Momotae

Toshiba Semiconductor and Storage

SSM3K09FU,LF

Wahanga Tapeke: 126797

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 3.3V, 10V, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J134TU,LF

Wahanga Tapeke: 16272

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPN3300ANH,LQ

Wahanga Tapeke: 195443

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 4.7A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPCF8107,LF

Wahanga Tapeke: 69123

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6J501NU,LF

Wahanga Tapeke: 176891

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3H137TU,LF

Wahanga Tapeke: 16238

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 34V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1A, 10V,

Momotae

TPCA8008-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCA8008-H(TE12L,Q

Wahanga Tapeke: 9581

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 580 mOhm @ 2A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K72CFS,LF

Wahanga Tapeke: 138628

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

Momotae

SSM3J129TU(TE85L)

Toshiba Semiconductor and Storage

SSM3J129TU(TE85L)

Wahanga Tapeke: 6003

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V,

Momotae

TPCC8005-H(TE12LQM

Toshiba Semiconductor and Storage

TPCC8005-H(TE12LQM

Wahanga Tapeke: 9435

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K17SU,LF

Wahanga Tapeke: 5947

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Rds Kei (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V,

Momotae

TPCA8025(TE12L,Q,M

Toshiba Semiconductor and Storage

TPCA8025(TE12L,Q,M

Wahanga Tapeke: 9392

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V,

Momotae

TPCA8021-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8021-H(TE12LQM

Wahanga Tapeke: 9362

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC8109(TE12L)

Wahanga Tapeke: 9242

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V,

Momotae

SSM3J108TU(TE85L)

Toshiba Semiconductor and Storage

SSM3J108TU(TE85L)

Wahanga Tapeke: 9444

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4V, Rds Kei (Max) @ Id, Vgs: 158 mOhm @ 800mA, 4V,

Momotae

TPCC8002-H(TE12L,Q

Toshiba Semiconductor and Storage

TPCC8002-H(TE12L,Q

Wahanga Tapeke: 8783

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN2R304PL,L1Q

Wahanga Tapeke: 119339

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 40A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K56FS,LF

Wahanga Tapeke: 100620

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TK31A60W,S4VX

Wahanga Tapeke: 10937

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN4R303NL,L1Q

Wahanga Tapeke: 185384

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPHR9003NL,L1Q

Wahanga Tapeke: 60875

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K15F,LF

Wahanga Tapeke: 25861

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

SSM3K44FS,LF

Wahanga Tapeke: 25853

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TK31J60W5,S1VQ

Wahanga Tapeke: 9256

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH6400ENH,L1Q

Wahanga Tapeke: 101081

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 6.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH8R80ANH,L1Q

Wahanga Tapeke: 98527

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K59CTB,L3F

Wahanga Tapeke: 173472

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 8V, Rds Kei (Max) @ Id, Vgs: 215 mOhm @ 1A, 8V,

Momotae

SSM3J46CTB(TPL3)

Toshiba Semiconductor and Storage

SSM3J46CTB(TPL3)

Wahanga Tapeke: 115248

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 103 mOhm @ 1.5A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K16CTC,L3F

Wahanga Tapeke: 21536

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TK20N60W,S1VF

Wahanga Tapeke: 14097

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V,

Momotae

741

«
7
8
9
10
11
12
13
14
15
16
»