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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK12A53D(STA4,Q,M)

Wahanga Tapeke: 31913

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 525V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V,

Momotae
TK8Q60W,S1VQ
Toshiba Semiconductor and Storage

TK8Q60W,S1VQ

Wahanga Tapeke: 36648

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V,

Momotae
TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

Wahanga Tapeke: 54078

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.51 Ohm @ 1.3A, 10V,

Momotae
TK14G65W5,RQ
Toshiba Semiconductor and Storage

TK14G65W5,RQ

Wahanga Tapeke: 61791

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

Momotae
TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ80S04M3L(T6L1,NQ

Wahanga Tapeke: 75895

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V,

Momotae
TPHR8504PL,L1Q
Toshiba Semiconductor and Storage

TPHR8504PL,L1Q

Wahanga Tapeke: 64047

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.85 mOhm @ 50A, 10V,

Momotae
TK100S04N1L,LQ
Toshiba Semiconductor and Storage

TK100S04N1L,LQ

Wahanga Tapeke: 59911

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V,

Momotae
TK7A65W,S5X
Toshiba Semiconductor and Storage

TK7A65W,S5X

Wahanga Tapeke: 40074

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 780 mOhm @ 3.4A, 10V,

Momotae
TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A50D(STA4,Q,M)

Wahanga Tapeke: 43168

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V,

Momotae
TK5A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

Wahanga Tapeke: 59442

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V,

Momotae
SSM3K15AFS,LF
Toshiba Semiconductor and Storage

SSM3K15AFS,LF

Wahanga Tapeke: 146399

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Momotae
TK10V60W,LVQ
Toshiba Semiconductor and Storage

TK10V60W,LVQ

Wahanga Tapeke: 45593

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

Momotae
TPH2900ENH,L1Q
Toshiba Semiconductor and Storage

TPH2900ENH,L1Q

Wahanga Tapeke: 67627

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 16.5A, 10V,

Momotae
TK60E08K3,S1X(S
Toshiba Semiconductor and Storage

TK60E08K3,S1X(S

Wahanga Tapeke: 47246

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Momotae
TK8A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A60DA(STA4,Q,M)

Wahanga Tapeke: 45679

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V,

Momotae
TK5A65W,S5X
Toshiba Semiconductor and Storage

TK5A65W,S5X

Wahanga Tapeke: 41464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2.6A, 10V,

Momotae
TPCA8064-H,LQ(CM
Toshiba Semiconductor and Storage

TPCA8064-H,LQ(CM

Wahanga Tapeke: 77317

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V,

Momotae
TK160F10N1L,LQ
Toshiba Semiconductor and Storage

TK160F10N1L,LQ

Wahanga Tapeke: 7982

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V,

Momotae
TK3A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK3A60DA(STA4,Q,M)

Wahanga Tapeke: 68119

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V,

Momotae
TK6A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A50D(STA4,Q,M)

Wahanga Tapeke: 60129

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V,

Momotae
TK18E10K3,S1X(S
Toshiba Semiconductor and Storage

TK18E10K3,S1X(S

Wahanga Tapeke: 56261

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 9A, 10V,

Momotae
TK6Q65W,S1Q
Toshiba Semiconductor and Storage

TK6Q65W,S1Q

Wahanga Tapeke: 51965

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V,

Momotae
TK6A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A45DA(STA4,Q,M)

Wahanga Tapeke: 65709

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.35 Ohm @ 2.8A, 10V,

Momotae
TK7A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK7A55D(STA4,Q,M)

Wahanga Tapeke: 51660

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.25 Ohm @ 3.5A, 10V,

Momotae
TK6Q60W,S1VQ
Toshiba Semiconductor and Storage

TK6Q60W,S1VQ

Wahanga Tapeke: 45527

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V,

Momotae
TK9A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK9A45D(STA4,Q,M)

Wahanga Tapeke: 48218

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 770 mOhm @ 4.5A, 10V,

Momotae
TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

TK40E10K3,S1X(S

Wahanga Tapeke: 43237

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Ta), Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V,

Momotae
TPCA8055-H,LQ(M
Toshiba Semiconductor and Storage

TPCA8055-H,LQ(M

Wahanga Tapeke: 60456

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V,

Momotae
TK12A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK12A60D(STA4,Q,M)

Wahanga Tapeke: 50578

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V,

Momotae
TK11A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK11A50D(STA4,Q,M)

Wahanga Tapeke: 38250

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 5.5A, 10V,

Momotae
TK6A65W,S5X
Toshiba Semiconductor and Storage

TK6A65W,S5X

Wahanga Tapeke: 38216

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 2.9A, 10V,

Momotae
TK8A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A45D(STA4,Q,M)

Wahanga Tapeke: 51493

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V,

Momotae
TK5A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK5A65DA(STA4,Q,M)

Wahanga Tapeke: 51848

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.67 Ohm @ 2.3A, 10V,

Momotae
SSM3J327R,LF
Toshiba Semiconductor and Storage

SSM3J327R,LF

Wahanga Tapeke: 111963

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V,

Momotae
SSM3K37MFV,L3F
Toshiba Semiconductor and Storage

SSM3K37MFV,L3F

Wahanga Tapeke: 146195

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

Momotae
TK6A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A53D(STA4,Q,M)

Wahanga Tapeke: 55041

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 525V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

Momotae