Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Toshiba Semiconductor and Storage

TK15S04N1L,LQ

Wahanga Tapeke: 110924

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 17.8 mOhm @ 7.5A, 10V,

Momotae

TK5P50D(T6RSS-Q)

Toshiba Semiconductor and Storage

TK5P50D(T6RSS-Q)

Wahanga Tapeke: 127525

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH2010FNH,L1Q

Wahanga Tapeke: 117809

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 198 mOhm @ 2.8A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH1110ENH,L1Q

Wahanga Tapeke: 110777

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K35CTC,L3F

Wahanga Tapeke: 122010

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

Momotae

TK20S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK20S06K3L(T6L1,NQ

Wahanga Tapeke: 135950

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC8133,LQ(S

Wahanga Tapeke: 142820

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH7R006PL,L1Q

Wahanga Tapeke: 145095

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TK60P03M1,RQ(S

Wahanga Tapeke: 152903

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.4 mOhm @ 30A, 10V,

Momotae

TK80S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK80S06K3L(T6L1,NQ

Wahanga Tapeke: 78944

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K339R,LF

Wahanga Tapeke: 190791

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 8V, Rds Kei (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V,

Momotae

TJ40S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ40S04M3L(T6L1,NQ

Wahanga Tapeke: 105767

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN1110ENH,L1Q

Wahanga Tapeke: 113296

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH8R008NH,L1Q

Wahanga Tapeke: 104295

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 17A, 10V,

Momotae

TK10S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK10S04K3L(T6L1,NQ

Wahanga Tapeke: 144152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V,

Momotae

TJ10S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ10S04M3L(T6L1,NQ

Wahanga Tapeke: 135878

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 5A, 10V,

Momotae

SSM3K15AMFV,L3F

Toshiba Semiconductor and Storage

SSM3K15AMFV,L3F

Wahanga Tapeke: 170532

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Momotae

TK6P53D(T6RSS-Q)

Toshiba Semiconductor and Storage

TK6P53D(T6RSS-Q)

Wahanga Tapeke: 115497

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 525V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK560P65Y,RQ

Wahanga Tapeke: 135881

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V,

Momotae

TJ20S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ20S04M3L(T6L1,NQ

Wahanga Tapeke: 135946

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 22.2 mOhm @ 10A, 10V,

Momotae

TK30S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK30S06K3L(T6L1,NQ

Wahanga Tapeke: 128540

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 18 Ohm @ 15A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK9P65W,RQ

Wahanga Tapeke: 93752

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 560 mOhm @ 4.6A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH1R712MD,L1Q

Wahanga Tapeke: 128383

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPH4R606NH,L1Q

Wahanga Tapeke: 83323

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V,

Momotae

TPCA8056-H,LQ(M

Toshiba Semiconductor and Storage

TPCA8056-H,LQ(M

Wahanga Tapeke: 105511

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.2 mOhm @ 24A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH1110FNH,L1Q

Wahanga Tapeke: 95924

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V,

Momotae

TK80S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK80S04K3L(T6L1,NQ

Wahanga Tapeke: 78949

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 40A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH1R005PL,L1Q

Wahanga Tapeke: 82892

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.04 mOhm @ 50A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN2010FNH,L1Q

Wahanga Tapeke: 110042

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 198 mOhm @ 2.8A, 10V,

Momotae

TK8A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

TK8A50D(STA4,Q,M)

Wahanga Tapeke: 98335

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V,

Momotae

TJ8S06M3L(T6L1,NQ)

Toshiba Semiconductor and Storage

TJ8S06M3L(T6L1,NQ)

Wahanga Tapeke: 144102

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 104 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH4R10ANL,L1Q

Wahanga Tapeke: 7692

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 92A (Ta), 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK6P65W,RQ

Wahanga Tapeke: 129654

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V,

Momotae

TJ15S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ15S06M3L(T6L1,NQ

Wahanga Tapeke: 135951

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 7.5A, 10V,

Momotae

TK20S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK20S04K3L(T6L1,NQ

Wahanga Tapeke: 135921

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V,

Momotae

TJ30S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ30S06M3L(T6L1,NQ

Wahanga Tapeke: 104508

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 21.8 mOhm @ 15A, 10V,

Momotae

741

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