Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 21

SSM3K344R,LF

Wahanga Tapeke: 172502

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 71 mOhm @ 3A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM5N15FU,LF

Wahanga Tapeke: 145407

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TJ15P04M3,RQ(S

Wahanga Tapeke: 165753

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN2R805PL,L1Q

Wahanga Tapeke: 7504

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A (Ta), 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK50P03M1(T6RSS-Q)

Wahanga Tapeke: 196259

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN11003NL,LQ

Wahanga Tapeke: 185923

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 5.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6K514NU,LF

Wahanga Tapeke: 132249

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.6 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH11006NL,LQ

Wahanga Tapeke: 147549

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TP86R203NL,LQ

Wahanga Tapeke: 195446

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 9A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK20P04M1,RQ(S

Wahanga Tapeke: 189721

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6J212FE,LF

Wahanga Tapeke: 180699

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 40.7 mOhm @ 3A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K15ACTC,L3F

Wahanga Tapeke: 168469

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TPC8067-H,LQ(S

Wahanga Tapeke: 173926

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K318R,LF

Wahanga Tapeke: 100090

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 107 mOhm @ 2A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC8066-H,LQ(S

Wahanga Tapeke: 190514

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN13008NH,L1Q

Wahanga Tapeke: 180755

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13.3 mOhm @ 9A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J35AMFV,L3F

Wahanga Tapeke: 7230

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K7002KF,LF

Wahanga Tapeke: 169654

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC8132,LQ(S

Wahanga Tapeke: 170665

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6K504NU,LF

Wahanga Tapeke: 129507

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 19.5 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC8134,LQ(S

Wahanga Tapeke: 7395

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 2.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J325F,LF

Wahanga Tapeke: 115358

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K72KFS,LF

Wahanga Tapeke: 7312

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6K341NU,LF

Wahanga Tapeke: 7275

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TP89R103NL,LQ

Wahanga Tapeke: 119858

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.1 mOhm @ 7.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K35AFS,LF

Wahanga Tapeke: 196668

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPCC8093,L1Q

Wahanga Tapeke: 7348

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 5.8 mOhm @ 10.5A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPH6R30ANL,L1Q

Wahanga Tapeke: 7573

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 66A (Ta), 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.3 mOhm @ 22.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC6110(TE85L,F,M)

Wahanga Tapeke: 181802

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Rds Kei (Max) @ Id, Vgs: 56 mOhm @ 2.2A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J112TU,LF

Wahanga Tapeke: 5773

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 390 mOhm @ 500mA, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K37CT,L3F

Wahanga Tapeke: 164943

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM6J505NU,LF

Wahanga Tapeke: 146525

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 4A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3J358R,LF

Wahanga Tapeke: 133378

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 8V, Rds Kei (Max) @ Id, Vgs: 22.1 mOhm @ 6A, 8V,

Momotae

Toshiba Semiconductor and Storage

SSM3K15ACT(TPL3)

Wahanga Tapeke: 197326

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TPH3R704PL,L1Q

Wahanga Tapeke: 134761

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 92A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 46A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPC8065-H,LQ(S

Wahanga Tapeke: 171095

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.6 mOhm @ 6.5A, 10V,

Momotae