Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Toshiba Semiconductor and Storage

TPCA8120,LQ(CM

Wahanga Tapeke: 83086

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 22.5A, 10V,

Momotae

TJ60S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ60S04M3L(T6L1,NQ

Wahanga Tapeke: 86603

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK7P65W,RQ

Wahanga Tapeke: 118054

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 3.4A, 10V,

Momotae

TK5P53D(T6RSS-Q)

Toshiba Semiconductor and Storage

TK5P53D(T6RSS-Q)

Wahanga Tapeke: 123262

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 525V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K15AFU,LF

Wahanga Tapeke: 175836

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TPN11006NL,LQ

Wahanga Tapeke: 101200

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH8R903NL,LQ

Wahanga Tapeke: 115691

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K336R,LF

Wahanga Tapeke: 142287

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 2A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K116TU,LF

Wahanga Tapeke: 124084

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V,

Momotae

TPCP8J01(TE85L,F,M

Toshiba Semiconductor and Storage

TPCP8J01(TE85L,F,M

Wahanga Tapeke: 7462

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 32V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 3A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6K403TU,LF

Wahanga Tapeke: 160075

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V,

Momotae

Toshiba Semiconductor and Storage

TPN6R303NC,LQ

Wahanga Tapeke: 135173

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V,

Momotae

SSM3K16CT(TPL3)

Toshiba Semiconductor and Storage

SSM3K16CT(TPL3)

Wahanga Tapeke: 100992

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V,

Momotae

TK2P60D(TE16L1,NQ)

Toshiba Semiconductor and Storage

TK2P60D(TE16L1,NQ)

Wahanga Tapeke: 165770

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K36FS,LF

Wahanga Tapeke: 126626

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 5V, Rds Kei (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V,

Momotae

Toshiba Semiconductor and Storage

SSM3J332R,LF

Wahanga Tapeke: 169586

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH14006NH,L1Q

Wahanga Tapeke: 166914

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 7A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6K513NU,LF

Wahanga Tapeke: 134203

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.9 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3J328R,LF

Wahanga Tapeke: 158450

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM6J507NU,LF

Wahanga Tapeke: 126250

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH6R004PL,LQ

Wahanga Tapeke: 7474

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 87A (Ta), 49A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 24.5A, 10V,

Momotae

SSM3K7002KFU,LF

Toshiba Semiconductor and Storage

SSM3K7002KFU,LF

Wahanga Tapeke: 186902

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM3K376R,LF

Wahanga Tapeke: 7265

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 56 mOhm @ 2A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3J331R,LF

Wahanga Tapeke: 7291

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K56ACT,L3F

Wahanga Tapeke: 123517

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K335R,LF

Wahanga Tapeke: 165419

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 4A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH6R003NL,LQ

Wahanga Tapeke: 185914

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 19A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6J414TU,LF

Wahanga Tapeke: 168558

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 22.5 mOhm @ 6A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K361R,LF

Wahanga Tapeke: 190687

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V,

Momotae

SSM3K35AMFV,L3F

Toshiba Semiconductor and Storage

SSM3K35AMFV,L3F

Wahanga Tapeke: 131212

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K329R,LF

Wahanga Tapeke: 180365

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4V, Rds Kei (Max) @ Id, Vgs: 126 mOhm @ 1A, 4V,

Momotae

Toshiba Semiconductor and Storage

SSM6K361NU,LF

Wahanga Tapeke: 7288

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V,

Momotae

Toshiba Semiconductor and Storage

SSM6K217FE,LF

Wahanga Tapeke: 166457

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 8V, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 1A, 8V,

Momotae

Toshiba Semiconductor and Storage

SSM3K36MFV,L3F

Wahanga Tapeke: 111367

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 5V, Rds Kei (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V,

Momotae

TPC6113(TE85L,F,M)

Toshiba Semiconductor and Storage

TPC6113(TE85L,F,M)

Wahanga Tapeke: 100371

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

SSM3K341R,LF

Wahanga Tapeke: 103520

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5A, 10V,

Momotae

741

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