Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

TPC8018-H(TE12LQM)

Toshiba Semiconductor and Storage

TPC8018-H(TE12LQM)

Wahanga Tapeke: 679

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V,

Momotae

TPCA8A02-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8A02-H(TE12LQM

Wahanga Tapeke: 6139

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.3 mOhm @ 17A, 10V,

Momotae

TPC6006-H(TE85L,F)

Toshiba Semiconductor and Storage

TPC6006-H(TE85L,F)

Wahanga Tapeke: 613

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 1.9A, 10V,

Momotae

TPC8A02-H(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8A02-H(TE12L,Q)

Wahanga Tapeke: 6153

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 8A, 10V,

Momotae

TPC8115(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8115(TE12L,Q,M)

Wahanga Tapeke: 662

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V,

Momotae

SSM6J206FE(TE85L,F

Toshiba Semiconductor and Storage

SSM6J206FE(TE85L,F

Wahanga Tapeke: 122160

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 1A, 4V,

Momotae

Toshiba Semiconductor and Storage

SSM6K211FE,LF

Wahanga Tapeke: 118254

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V,

Momotae

TPC6107(TE85L,F,M)

Toshiba Semiconductor and Storage

TPC6107(TE85L,F,M)

Wahanga Tapeke: 696

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 2.2A, 4.5V,

Momotae

TPCA8011-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8011-H(TE12LQM

Wahanga Tapeke: 702

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 4.5V,

Momotae

TPCA8023-H(TE12LQM

Toshiba Semiconductor and Storage

TPCA8023-H(TE12LQM

Wahanga Tapeke: 617

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12.9 mOhm @ 11A, 10V,

Momotae

SSM6P16FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P16FE(TE85L,F)

Wahanga Tapeke: 122091

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4V, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V,

Momotae

Toshiba Semiconductor and Storage

TK60D08J1(Q)

Wahanga Tapeke: 605

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.8 mOhm @ 30A, 10V,

Momotae

TPC8035-H(TE12L,QM

Toshiba Semiconductor and Storage

TPC8035-H(TE12L,QM

Wahanga Tapeke: 724

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 9A, 10V,

Momotae

Toshiba Semiconductor and Storage

TK55D10J1(Q)

Wahanga Tapeke: 607

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 27A, 10V,

Momotae

TPC8033-H(TE12LQM)

Toshiba Semiconductor and Storage

TPC8033-H(TE12LQM)

Wahanga Tapeke: 654

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Rds Kei (Max) @ Id, Vgs: 5.3 mOhm @ 8.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH4R003NL,L1Q

Wahanga Tapeke: 177522

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V,

Momotae

TK15A60U(STA4,Q,M)

Toshiba Semiconductor and Storage

TK15A60U(STA4,Q,M)

Wahanga Tapeke: 19386

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V,

Momotae

TPC6109-H(TE85L,FM

Toshiba Semiconductor and Storage

TPC6109-H(TE85L,FM

Wahanga Tapeke: 580

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH5R906NH,L1Q

Wahanga Tapeke: 101405

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.9 mOhm @ 14A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN2R703NL,L1Q

Wahanga Tapeke: 157904

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH3R203NL,L1Q

Wahanga Tapeke: 152151

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 47A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 23.5A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN1R603PL,L1Q

Wahanga Tapeke: 133183

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN4R712MD,L1Q

Wahanga Tapeke: 127241

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 18A, 4.5V,

Momotae

Toshiba Semiconductor and Storage

TPW1R005PL,L1Q

Wahanga Tapeke: 58868

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH7R506NH,L1Q

Wahanga Tapeke: 117819

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 11A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH4R008NH,L1Q

Wahanga Tapeke: 56308

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V,

Momotae

TPCA8051-H(T2L1,VM

Toshiba Semiconductor and Storage

TPCA8051-H(T2L1,VM

Wahanga Tapeke: 50520

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.4 mOhm @ 14A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPHR6503PL,L1Q

Wahanga Tapeke: 89887

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.65 mOhm @ 50A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPH1R204PL,L1Q

Wahanga Tapeke: 127090

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.24 mOhm @ 50A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPHR9203PL,L1Q

Wahanga Tapeke: 87586

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V,

Momotae

Toshiba Semiconductor and Storage

TPN7R506NH,L1Q

Wahanga Tapeke: 186783

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V,

Momotae

Toshiba Semiconductor and Storage

TPW4R008NH,L1Q

Wahanga Tapeke: 87538

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 116A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V,

Momotae

TPCF8104(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8104(TE85L,F,M

Wahanga Tapeke: 9727

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V,

Momotae

TPCF8B01(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8B01(TE85L,F,M

Wahanga Tapeke: 9844

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V,

Momotae

TPCF8A01(TE85L)

Toshiba Semiconductor and Storage

TPCF8A01(TE85L)

Wahanga Tapeke: 9829

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V,

Momotae

TPCF8101(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8101(TE85L,F,M

Wahanga Tapeke: 6036

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V,

Momotae

741

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