Optoisolators - Transistor, Putanga Whakaahua

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Optoisolators - Transistor, Putanga Whakaahua

Toshiba Semiconductor and Storage

TLP292-4(LA,E

Wahanga Tapeke: 50525

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP292-4(LGB,E

Wahanga Tapeke: 50524

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(V4LATRE

Toshiba Semiconductor and Storage

TLP292-4(V4LATRE

Wahanga Tapeke: 151683

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(V4-TR,E

Toshiba Semiconductor and Storage

TLP292-4(V4-TR,E

Wahanga Tapeke: 151713

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP632(GB,F)

Wahanga Tapeke: 46966

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP387(TPL,E

Wahanga Tapeke: 9942

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 1000% @ 1mA, Whakakā / Weto Weto (Patohia): 50µs, 15µs, Whakatika / Wa Hinga (Momo): 40µs, 15µs,

Momotae

TLP388(D4-TPL,E

Toshiba Semiconductor and Storage

TLP388(D4-TPL,E

Wahanga Tapeke: 9999

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP2303(TPL,E

Wahanga Tapeke: 179534

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 500% @ 5mA,

Momotae

TLP292-4(V4LGB,E

Toshiba Semiconductor and Storage

TLP292-4(V4LGB,E

Wahanga Tapeke: 50568

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP290(GB,SE

Wahanga Tapeke: 159226

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 7µs, 7µs, Whakatika / Wa Hinga (Momo): 4µs, 7µs,

Momotae

Toshiba Semiconductor and Storage

TLP631(F)

Wahanga Tapeke: 2606

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP184(BL-TPL,SE

Toshiba Semiconductor and Storage

TLP184(BL-TPL,SE

Wahanga Tapeke: 117114

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(LA-TP,E

Toshiba Semiconductor and Storage

TLP293-4(LA-TP,E

Wahanga Tapeke: 160464

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(LGBTR,E

Toshiba Semiconductor and Storage

TLP292-4(LGBTR,E

Wahanga Tapeke: 151734

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP2530(F)

Wahanga Tapeke: 41674

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 7% @ 16mA, Whakakā / Weto Weto (Patohia): 300ns, 500ns,

Momotae

TLP388(D4GB-TL,E

Toshiba Semiconductor and Storage

TLP388(D4GB-TL,E

Wahanga Tapeke: 9996

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP785(GR,F)

Wahanga Tapeke: 135682

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(V4LATPE

Toshiba Semiconductor and Storage

TLP292-4(V4LATPE

Wahanga Tapeke: 151689

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(V4-GB,E

Toshiba Semiconductor and Storage

TLP293-4(V4-GB,E

Wahanga Tapeke: 53541

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP293-4(GB,E

Wahanga Tapeke: 53544

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(V4-TP,E

Toshiba Semiconductor and Storage

TLP293-4(V4-TP,E

Wahanga Tapeke: 160451

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP184(GR-TPL,SE

Toshiba Semiconductor and Storage

TLP184(GR-TPL,SE

Wahanga Tapeke: 109314

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP292-4(TP,E

Wahanga Tapeke: 151729

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(V4GBTRE

Toshiba Semiconductor and Storage

TLP292-4(V4GBTRE

Wahanga Tapeke: 151698

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP292-4(TPR,E

Wahanga Tapeke: 151687

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(V4-TR,E

Toshiba Semiconductor and Storage

TLP293-4(V4-TR,E

Wahanga Tapeke: 160497

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(4LGBTRE

Toshiba Semiconductor and Storage

TLP292-4(4LGBTRE

Wahanga Tapeke: 151724

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP785(F)

Wahanga Tapeke: 135607

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP559(F)

Wahanga Tapeke: 25416

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 16mA, Whakakā / Weto Weto (Patohia): 200ns, 300ns,

Momotae

Toshiba Semiconductor and Storage

TLP184(E)

Wahanga Tapeke: 106154

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae

Toshiba Semiconductor and Storage

TLP293-4(E

Wahanga Tapeke: 53477

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(V4LATPE

Toshiba Semiconductor and Storage

TLP293-4(V4LATPE

Wahanga Tapeke: 160515

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(LA-TR,E

Toshiba Semiconductor and Storage

TLP292-4(LA-TR,E

Wahanga Tapeke: 151681

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293(BLL-TPL,E

Toshiba Semiconductor and Storage

TLP293(BLL-TPL,E

Wahanga Tapeke: 173727

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP109(IGM-TPR,E

Toshiba Semiconductor and Storage

TLP109(IGM-TPR,E

Wahanga Tapeke: 9983

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 25% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 75% @ 10mA, Whakakā / Weto Weto (Patohia): 450ns, 450ns,

Momotae

Toshiba Semiconductor and Storage

TLP331(F)

Wahanga Tapeke: 46370

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

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