Optoisolators - Transistor, Putanga Whakaahua

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Optoisolators - Transistor, Putanga Whakaahua

Toshiba Semiconductor and Storage

TLP620-4(F)

Wahanga Tapeke: 20539

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(V4LGB,E

Toshiba Semiconductor and Storage

TLP293-4(V4LGB,E

Wahanga Tapeke: 53459

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP293-4(V4,E

Wahanga Tapeke: 53455

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP624F

Wahanga Tapeke: 61598

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

Toshiba Semiconductor and Storage

TLP626(BV,F)

Wahanga Tapeke: 43947

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

Toshiba Semiconductor and Storage

TLP630(GB,F)

Wahanga Tapeke: 66641

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(V4-TP,E

Toshiba Semiconductor and Storage

TLP292-4(V4-TP,E

Wahanga Tapeke: 151764

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP2309(E)

Wahanga Tapeke: 59619

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 15% @ 16mA, Whakakā / Weto Weto (Patohia): 1µs, 1µs (Max),

Momotae

TLP293-4(4LGBTPE

Toshiba Semiconductor and Storage

TLP293-4(4LGBTPE

Wahanga Tapeke: 160453

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP626-4(F)

Wahanga Tapeke: 14843

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

TLP291(BLL-TP,SE

Toshiba Semiconductor and Storage

TLP291(BLL-TP,SE

Wahanga Tapeke: 194121

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP383(GR-TPL,E

Toshiba Semiconductor and Storage

TLP383(GR-TPL,E

Wahanga Tapeke: 198476

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP290-4(GB-TP,E)

Toshiba Semiconductor and Storage

TLP290-4(GB-TP,E)

Wahanga Tapeke: 183582

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP188(TPL,E

Wahanga Tapeke: 124079

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP185(GB,E)

Wahanga Tapeke: 140864

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae

Toshiba Semiconductor and Storage

TLP137(F)

Wahanga Tapeke: 59555

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

TLP183(GR-TPL,E

Toshiba Semiconductor and Storage

TLP183(GR-TPL,E

Wahanga Tapeke: 174220

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP291(GB-TP,E)

Toshiba Semiconductor and Storage

TLP291(GB-TP,E)

Wahanga Tapeke: 21556

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 7µs, 7µs, Whakatika / Wa Hinga (Momo): 4µs, 7µs,

Momotae

Toshiba Semiconductor and Storage

TLP290-4(TP,E

Wahanga Tapeke: 183593

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP291(GB-TP,SE

Toshiba Semiconductor and Storage

TLP291(GB-TP,SE

Wahanga Tapeke: 192817

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293(GR-TPL,E

Toshiba Semiconductor and Storage

TLP293(GR-TPL,E

Wahanga Tapeke: 103158

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP190B(U,C,F)

Wahanga Tapeke: 27900

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Whakakā / Weto Weto (Patohia): 200µs, 1ms,

Momotae

TLP387(D4-TPL,E

Toshiba Semiconductor and Storage

TLP387(D4-TPL,E

Wahanga Tapeke: 16214

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 1000% @ 1mA, Whakakā / Weto Weto (Patohia): 50µs, 15µs, Whakatika / Wa Hinga (Momo): 40µs, 15µs,

Momotae

Toshiba Semiconductor and Storage

TLP291-4(TP,E)

Wahanga Tapeke: 101054

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP124(TPR,F)

Wahanga Tapeke: 180346

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

Toshiba Semiconductor and Storage

TLP185(E)

Wahanga Tapeke: 140855

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae

TLP293-4(LGBTP,E

Toshiba Semiconductor and Storage

TLP293-4(LGBTP,E

Wahanga Tapeke: 160506

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP183(TPL,E

Wahanga Tapeke: 129073

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP290-4(GB,E)

Wahanga Tapeke: 34934

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(GB-TP,E

Toshiba Semiconductor and Storage

TLP293-4(GB-TP,E

Wahanga Tapeke: 160465

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP185(GR,E)

Wahanga Tapeke: 140854

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae

TLP185(GRH-TL,SE

Toshiba Semiconductor and Storage

TLP185(GRH-TL,SE

Wahanga Tapeke: 163208

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 150% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP126TPRF

Wahanga Tapeke: 45231

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

Toshiba Semiconductor and Storage

TLP785(GB,F)

Wahanga Tapeke: 135611

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP785(GR-TP6,F)

Toshiba Semiconductor and Storage

TLP785(GR-TP6,F)

Wahanga Tapeke: 133346

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP109(TPL,E

Wahanga Tapeke: 172059

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 16mA, Whakakā / Weto Weto (Patohia): 800ns, 800ns (Max),

Momotae

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