Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Optoisolators - Transistor, Putanga Whakaahua

  • Kāinga
  •  
  • Optoisolators - Transistor, Putanga Whakaahua
TLP185(GB-TPL,E)
Toshiba Semiconductor and Storage

TLP185(GB-TPL,E)

Wahanga Tapeke: 5219

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae
TLP385(GRL-TPR,E
Toshiba Semiconductor and Storage

TLP385(GRL-TPR,E

Wahanga Tapeke: 5247

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(Y-TPL,SE
Toshiba Semiconductor and Storage

TLP184(Y-TPL,SE

Wahanga Tapeke: 167431

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(GR,SE
Toshiba Semiconductor and Storage

TLP184(GR,SE

Wahanga Tapeke: 5214

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP185(GB-TPR,SE
Toshiba Semiconductor and Storage

TLP185(GB-TPR,SE

Wahanga Tapeke: 5227

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP185(BL-TPL,SE
Toshiba Semiconductor and Storage

TLP185(BL-TPL,SE

Wahanga Tapeke: 139225

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP291(SE
Toshiba Semiconductor and Storage

TLP291(SE

Wahanga Tapeke: 5265

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP185(GR,SE
Toshiba Semiconductor and Storage

TLP185(GR,SE

Wahanga Tapeke: 5181

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP131(GB-TPR,F)
Toshiba Semiconductor and Storage

TLP131(GB-TPR,F)

Wahanga Tapeke: 5288

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP182(GR-TPL,E
Toshiba Semiconductor and Storage

TLP182(GR-TPL,E

Wahanga Tapeke: 184569

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(GB,SE
Toshiba Semiconductor and Storage

TLP184(GB,SE

Wahanga Tapeke: 106220

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(4LGBTPE
Toshiba Semiconductor and Storage

TLP292-4(4LGBTPE

Wahanga Tapeke: 151695

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP293-4(MBHATLE
Toshiba Semiconductor and Storage

TLP293-4(MBHATLE

Wahanga Tapeke: 160521

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP759(LF1,J,F)
Toshiba Semiconductor and Storage

TLP759(LF1,J,F)

Wahanga Tapeke: 5281

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 16mA, Whakakā / Weto Weto (Patohia): 200ns, 300ns,

Momotae
TLP331(BV,F)
Toshiba Semiconductor and Storage

TLP331(BV,F)

Wahanga Tapeke: 66605

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae
TLP183(GRL-TPL,E
Toshiba Semiconductor and Storage

TLP183(GRL-TPL,E

Wahanga Tapeke: 122091

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP290(SE
Toshiba Semiconductor and Storage

TLP290(SE

Wahanga Tapeke: 5293

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP109(V4,E
Toshiba Semiconductor and Storage

TLP109(V4,E

Wahanga Tapeke: 38024

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 16mA, Whakakā / Weto Weto (Patohia): 800ns, 800ns (Max),

Momotae
TLP126(F)
Toshiba Semiconductor and Storage

TLP126(F)

Wahanga Tapeke: 55569

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae
TLP2409(F)
Toshiba Semiconductor and Storage

TLP2409(F)

Wahanga Tapeke: 38421

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 16mA, Whakakā / Weto Weto (Patohia): 800ns, 800ns (Max),

Momotae
TLP293-4(V4-LA,E
Toshiba Semiconductor and Storage

TLP293-4(V4-LA,E

Wahanga Tapeke: 53487

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(V4,E
Toshiba Semiconductor and Storage

TLP292-4(V4,E

Wahanga Tapeke: 50532

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(V4-LA,E
Toshiba Semiconductor and Storage

TLP292-4(V4-LA,E

Wahanga Tapeke: 50590

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP291-4(V4GBTPE
Toshiba Semiconductor and Storage

TLP291-4(V4GBTPE

Wahanga Tapeke: 13216

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP124F
Toshiba Semiconductor and Storage

TLP124F

Wahanga Tapeke: 77911

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae
TLP292-4(LGBTP,E
Toshiba Semiconductor and Storage

TLP292-4(LGBTP,E

Wahanga Tapeke: 151709

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP626(F)
Toshiba Semiconductor and Storage

TLP626(F)

Wahanga Tapeke: 47627

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae
TLP185(Y-TPL,SE
Toshiba Semiconductor and Storage

TLP185(Y-TPL,SE

Wahanga Tapeke: 134050

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP785(Y,F)
Toshiba Semiconductor and Storage

TLP785(Y,F)

Wahanga Tapeke: 107781

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(GB,E
Toshiba Semiconductor and Storage

TLP292-4(GB,E

Wahanga Tapeke: 50554

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(GBTPR,E
Toshiba Semiconductor and Storage

TLP292-4(GBTPR,E

Wahanga Tapeke: 151711

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(E
Toshiba Semiconductor and Storage

TLP292-4(E

Wahanga Tapeke: 50537

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP293-4(LGB,E
Toshiba Semiconductor and Storage

TLP293-4(LGB,E

Wahanga Tapeke: 53509

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP109(E
Toshiba Semiconductor and Storage

TLP109(E

Wahanga Tapeke: 12167

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 16mA, Whakakā / Weto Weto (Patohia): 800ns, 800ns (Max),

Momotae
TLP292(GB-TPL,E
Toshiba Semiconductor and Storage

TLP292(GB-TPL,E

Wahanga Tapeke: 145868

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(V4-GB,E
Toshiba Semiconductor and Storage

TLP292-4(V4-GB,E

Wahanga Tapeke: 50580

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae