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Optoisolators - Transistor, Putanga Whakaahua

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  • Optoisolators - Transistor, Putanga Whakaahua
TLP184(TPL,E)
Toshiba Semiconductor and Storage

TLP184(TPL,E)

Wahanga Tapeke: 5337

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae
TLP631(BL,F)
Toshiba Semiconductor and Storage

TLP631(BL,F)

Wahanga Tapeke: 106577

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP293(E
Toshiba Semiconductor and Storage

TLP293(E

Wahanga Tapeke: 165593

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP385(D4YH-TL,E
Toshiba Semiconductor and Storage

TLP385(D4YH-TL,E

Wahanga Tapeke: 5334

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 75% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292(TPL,E
Toshiba Semiconductor and Storage

TLP292(TPL,E

Wahanga Tapeke: 181329

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP385(YH,E
Toshiba Semiconductor and Storage

TLP385(YH,E

Wahanga Tapeke: 2573

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 75% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP183(GB,E
Toshiba Semiconductor and Storage

TLP183(GB,E

Wahanga Tapeke: 5401

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(TPL,SE
Toshiba Semiconductor and Storage

TLP184(TPL,SE

Wahanga Tapeke: 151820

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP293(BL,E
Toshiba Semiconductor and Storage

TLP293(BL,E

Wahanga Tapeke: 115682

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP291(GR-TP,E)
Toshiba Semiconductor and Storage

TLP291(GR-TP,E)

Wahanga Tapeke: 5251

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 7µs, 7µs, Whakatika / Wa Hinga (Momo): 4µs, 7µs,

Momotae
TLP785F(D4GLT7,F
Toshiba Semiconductor and Storage

TLP785F(D4GLT7,F

Wahanga Tapeke: 5248

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP285(TP,F)
Toshiba Semiconductor and Storage

TLP285(TP,F)

Wahanga Tapeke: 5450

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP291(TP,SE
Toshiba Semiconductor and Storage

TLP291(TP,SE

Wahanga Tapeke: 104212

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292-4(LA-TP,E
Toshiba Semiconductor and Storage

TLP292-4(LA-TP,E

Wahanga Tapeke: 151695

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP291(V4GBTP,SE
Toshiba Semiconductor and Storage

TLP291(V4GBTP,SE

Wahanga Tapeke: 5431

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP290(GR-TP,SE
Toshiba Semiconductor and Storage

TLP290(GR-TP,SE

Wahanga Tapeke: 140186

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP385(D4Y-TPL,E
Toshiba Semiconductor and Storage

TLP385(D4Y-TPL,E

Wahanga Tapeke: 5299

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP281-4(TP,J,F)
Toshiba Semiconductor and Storage

TLP281-4(TP,J,F)

Wahanga Tapeke: 114713

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(V4-TPR,SE
Toshiba Semiconductor and Storage

TLP184(V4-TPR,SE

Wahanga Tapeke: 5319

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP185(TPR,E)
Toshiba Semiconductor and Storage

TLP185(TPR,E)

Wahanga Tapeke: 5457

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae
TLP385(D4BL-TL,E
Toshiba Semiconductor and Storage

TLP385(D4BL-TL,E

Wahanga Tapeke: 5427

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP385(D4GR-TR,E
Toshiba Semiconductor and Storage

TLP385(D4GR-TR,E

Wahanga Tapeke: 5284

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(V4GBTR,SE
Toshiba Semiconductor and Storage

TLP184(V4GBTR,SE

Wahanga Tapeke: 5358

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP559(IGM,F)
Toshiba Semiconductor and Storage

TLP559(IGM,F)

Wahanga Tapeke: 27925

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 25% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 75% @ 10mA, Whakakā / Weto Weto (Patohia): 450ns, 450ns,

Momotae
TLP385(GB-TPR,E
Toshiba Semiconductor and Storage

TLP385(GB-TPR,E

Wahanga Tapeke: 5336

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP293(GB,E
Toshiba Semiconductor and Storage

TLP293(GB,E

Wahanga Tapeke: 109757

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP293(YH-TPL,E
Toshiba Semiconductor and Storage

TLP293(YH-TPL,E

Wahanga Tapeke: 144679

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 75% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP291(V4GRTP,SE
Toshiba Semiconductor and Storage

TLP291(V4GRTP,SE

Wahanga Tapeke: 5473

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP371F
Toshiba Semiconductor and Storage

TLP371F

Wahanga Tapeke: 67278

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 1000% @ 1mA, Whakakā / Weto Weto (Patohia): 50µs, 15µs, Whakatika / Wa Hinga (Momo): 40µs, 15µs,

Momotae
TLP385(BLL-TPR,E
Toshiba Semiconductor and Storage

TLP385(BLL-TPR,E

Wahanga Tapeke: 5292

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP292(BL-TPL,E
Toshiba Semiconductor and Storage

TLP292(BL-TPL,E

Wahanga Tapeke: 148209

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP184(GB-TPR,SE
Toshiba Semiconductor and Storage

TLP184(GB-TPR,SE

Wahanga Tapeke: 183110

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP385(BL-TPL,E
Toshiba Semiconductor and Storage

TLP385(BL-TPL,E

Wahanga Tapeke: 5245

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP3924(TP15,F)
Toshiba Semiconductor and Storage

TLP3924(TP15,F)

Wahanga Tapeke: 38014

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 1500Vrms,

Momotae
TLP385(GRH-TPL,E
Toshiba Semiconductor and Storage

TLP385(GRH-TPL,E

Wahanga Tapeke: 5238

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 150% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae
TLP785(TP6,F)
Toshiba Semiconductor and Storage

TLP785(TP6,F)

Wahanga Tapeke: 148552

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae