Optoisolators - Transistor, Putanga Whakaahua

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Optoisolators - Transistor, Putanga Whakaahua

TLP290(GR-TP,E)

Toshiba Semiconductor and Storage

TLP290(GR-TP,E)

Wahanga Tapeke: 5818

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 7µs, 7µs, Whakatika / Wa Hinga (Momo): 4µs, 7µs,

Momotae

Toshiba Semiconductor and Storage

TLP290(TP,SE

Wahanga Tapeke: 104982

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP385(D4GB-TL,E

Toshiba Semiconductor and Storage

TLP385(D4GB-TL,E

Wahanga Tapeke: 5855

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP183(GR,E

Wahanga Tapeke: 5891

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP624-2(F)

Wahanga Tapeke: 5918

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

TLP388(GB-TPR,E

Toshiba Semiconductor and Storage

TLP388(GB-TPR,E

Wahanga Tapeke: 5959

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP292-4(GB-TP,E

Toshiba Semiconductor and Storage

TLP292-4(GB-TP,E

Wahanga Tapeke: 151762

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP781(D4-GR,F)

Toshiba Semiconductor and Storage

TLP781(D4-GR,F)

Wahanga Tapeke: 5796

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP293-4(LA-TR,E

Toshiba Semiconductor and Storage

TLP293-4(LA-TR,E

Wahanga Tapeke: 160461

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP185(BLL-TL,SE

Toshiba Semiconductor and Storage

TLP185(BLL-TL,SE

Wahanga Tapeke: 109293

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP185(BLL-TR,SE

Toshiba Semiconductor and Storage

TLP185(BLL-TR,SE

Wahanga Tapeke: 5791

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP183(YH-TPL,E

Toshiba Semiconductor and Storage

TLP183(YH-TPL,E

Wahanga Tapeke: 165231

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 75% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP385(GR-TPL,E

Toshiba Semiconductor and Storage

TLP385(GR-TPL,E

Wahanga Tapeke: 5763

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP385(GR,E

Wahanga Tapeke: 5942

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP292(Y-TPL,E

Wahanga Tapeke: 152156

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP191B(TPR,U,C,F)

Toshiba Semiconductor and Storage

TLP191B(TPR,U,C,F)

Wahanga Tapeke: 53983

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Whakakā / Weto Weto (Patohia): 200µs, 3ms,

Momotae

Toshiba Semiconductor and Storage

TLP185(TPR,SE

Wahanga Tapeke: 2579

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP290(TP,E)

Wahanga Tapeke: 5917

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 7µs, 7µs, Whakatika / Wa Hinga (Momo): 4µs, 7µs,

Momotae

Toshiba Semiconductor and Storage

TLP185(GB,SE

Wahanga Tapeke: 5934

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP385(D4YH-TR,E

Toshiba Semiconductor and Storage

TLP385(D4YH-TR,E

Wahanga Tapeke: 5933

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 75% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP291(GR-TP,SE

Toshiba Semiconductor and Storage

TLP291(GR-TP,SE

Wahanga Tapeke: 145661

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP109(IGM-TPL,E

Toshiba Semiconductor and Storage

TLP109(IGM-TPL,E

Wahanga Tapeke: 172094

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 25% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 75% @ 10mA, Whakakā / Weto Weto (Patohia): 450ns, 450ns,

Momotae

Toshiba Semiconductor and Storage

TLP785(D4-GR,F

Wahanga Tapeke: 5770

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP124(BV-TPR,F)

Toshiba Semiconductor and Storage

TLP124(BV-TPR,F)

Wahanga Tapeke: 136592

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakakā / Weto Weto (Patohia): 10µs, 8µs, Whakatika / Wa Hinga (Momo): 8µs, 8µs,

Momotae

Toshiba Semiconductor and Storage

TLP182(TPL,E

Wahanga Tapeke: 126008

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP184(GR-TPR,SE

Toshiba Semiconductor and Storage

TLP184(GR-TPR,SE

Wahanga Tapeke: 5788

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP2303(TPR,E

Wahanga Tapeke: 5972

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 500% @ 5mA,

Momotae

TLP183(GRH-TPL,E

Toshiba Semiconductor and Storage

TLP183(GRH-TPL,E

Wahanga Tapeke: 143341

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 150% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP183(BLL-TPL,E

Toshiba Semiconductor and Storage

TLP183(BLL-TPL,E

Wahanga Tapeke: 194118

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP293-4(TP,E

Wahanga Tapeke: 160452

Tuhinga o mua: 4, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP2303(E

Wahanga Tapeke: 5767

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 500% @ 5mA,

Momotae

TLP385(GB-TPL,E

Toshiba Semiconductor and Storage

TLP385(GB-TPL,E

Wahanga Tapeke: 5872

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

TLP385(BLL-TPL,E

Toshiba Semiconductor and Storage

TLP385(BLL-TPL,E

Wahanga Tapeke: 6002

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP131(F)

Wahanga Tapeke: 61069

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakakā / Weto Weto (Patohia): 3µs, 3µs, Whakatika / Wa Hinga (Momo): 2µs, 3µs,

Momotae

Toshiba Semiconductor and Storage

TLP184(GB,E)

Wahanga Tapeke: 109377

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 9µs, 9µs, Whakatika / Wa Hinga (Momo): 5µs, 9µs,

Momotae

Toshiba Semiconductor and Storage

TLP290(E)

Wahanga Tapeke: 99038

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 5mA, Whakakā / Weto Weto (Patohia): 7µs, 7µs, Whakatika / Wa Hinga (Momo): 4µs, 7µs,

Momotae

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