Transistors - FETs, MOSFETs - Huinga

IRF7313TRPBF

Wahanga Tapeke: 101851

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

IRF7301PBF

Wahanga Tapeke: 88872

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

IRF7507PBF

Wahanga Tapeke: 2758

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.4A, 1.7A, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

Ki te hiahia

IRLHS6376TR2PBF

Wahanga Tapeke: 2814

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

Ki te hiahia

IRLHS6276TRPBF

Wahanga Tapeke: 125842

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

Ki te hiahia

IRF6156

Wahanga Tapeke: 3344

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

NTJD4401NT4G

Wahanga Tapeke: 2719

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 630mA, Rds Kei (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

FDG6303N_D87Z

Wahanga Tapeke: 2711

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

NDS9957

Wahanga Tapeke: 3327

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

FDS6982S

Wahanga Tapeke: 2774

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, 8.6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

FDMS3600S

Wahanga Tapeke: 63274

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, 30A, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Ki te hiahia

FW216A-TL-2W

Wahanga Tapeke: 153552

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 35V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 4.5A, 10V,

Ki te hiahia

ECH8601M-TL-H

Wahanga Tapeke: 2899

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Ki te hiahia

HUFA76413DK8T

Wahanga Tapeke: 2732

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

NTMD2C02R2G

Wahanga Tapeke: 2750

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A, 3.4A, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

NVDD5894NLT4G

Wahanga Tapeke: 89660

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

NVMFD5853NWFT1G

Wahanga Tapeke: 90403

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

NTHD4401PT1

Wahanga Tapeke: 2644

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

FDZ2553N

Wahanga Tapeke: 2739

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.6A, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

SI7964DP-T1-GE3

Wahanga Tapeke: 2820

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Ki te hiahia

SIA778DJ-T1-GE3

Wahanga Tapeke: 103692

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, 1.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

SIF902EDZ-T1-E3

Wahanga Tapeke: 2784

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

SI5905BDC-T1-GE3

Wahanga Tapeke: 3293

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

SI7911DN-T1-E3

Wahanga Tapeke: 2776

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

SI8901EDB-T2-E1

Wahanga Tapeke: 2810

Momo FET: 2 P-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Vgs (th) (Max) @ Id: 1V @ 350µA,

Ki te hiahia

SI7948DP-T1-GE3

Wahanga Tapeke: 3297

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

SIA911DJ-T1-E3

Wahanga Tapeke: 2797

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia