Transistors - FETs, MOSFETs - Huinga

GWM160-0055X1-SMD

Wahanga Tapeke: 2839

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

GWM120-0075X1-SL

Wahanga Tapeke: 2858

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

SI4814BDY-T1-GE3

Wahanga Tapeke: 2891

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, 10.5A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SIZ998DT-T1-GE3

Wahanga Tapeke: 24358

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIA917DJ-T1-GE3

Wahanga Tapeke: 2760

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI5504DC-T1-E3

Wahanga Tapeke: 2750

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 2.1A, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI4966DY-T1-GE3

Wahanga Tapeke: 70490

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI1970DH-T1-E3

Wahanga Tapeke: 2698

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI5943DU-T1-E3

Wahanga Tapeke: 2795

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI1035X-T1-GE3

Wahanga Tapeke: 103062

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180mA, 145mA, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 400mV @ 250µA (Min),

SI9936BDY-T1-E3

Wahanga Tapeke: 2912

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SSM6L11TU(TE85L,F)

Wahanga Tapeke: 2856

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

EMH2314-TL-H

Wahanga Tapeke: 198673

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 2.5A, 4.5V,

NTLJD3183CZTBG

Wahanga Tapeke: 2772

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A, 2.2A, Rds Kei (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTHC5513T1G

Wahanga Tapeke: 148927

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 2.2A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NVJD5121NT1G

Wahanga Tapeke: 163473

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 295mA, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

MCH6606-TL-E

Wahanga Tapeke: 2897

EFC6611R-TF

Wahanga Tapeke: 136094

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive,

NTHD3100CT1G

Wahanga Tapeke: 110314

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 3.2A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FDS8958

Wahanga Tapeke: 2722

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, 5A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDC6020C_F077

Wahanga Tapeke: 2752

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A, 4.2A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDC6036P

Wahanga Tapeke: 3318

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDD8424H_F085

Wahanga Tapeke: 2811

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, 6.5A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

USB10H

Wahanga Tapeke: 2674

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.9A, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

MCH6662-TL-H

Wahanga Tapeke: 2857

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V,

MCH6613-TL-E

Wahanga Tapeke: 167978

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA, 200mA, Rds Kei (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

TMC1340-SO

Wahanga Tapeke: 2899

Momo FET: 2 N and 2 P-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, 4.1A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

IRF7755TR

Wahanga Tapeke: 2921

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7379

Wahanga Tapeke: 2654

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, 4.3A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF5851TRPBF

Wahanga Tapeke: 2806

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, 2.2A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

IRF8910PBF

Wahanga Tapeke: 77959

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

IRF7102

Wahanga Tapeke: 2715

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

IRF9953PBF

Wahanga Tapeke: 2737

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF7341PBF

Wahanga Tapeke: 71794

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

PMGD8000LN,115

Wahanga Tapeke: 2617

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 125mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

EPC2102ENG

Wahanga Tapeke: 2960

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,