Transistors - FETs, MOSFETs - Huinga

ECH8660-S-TL-H

ECH8660-S-TL-H

Wahanga Tapeke: 2959

Ki te hiahia
FDS6982

FDS6982

Wahanga Tapeke: 2700

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, 8.6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
ECH8659-TL-H

ECH8659-TL-H

Wahanga Tapeke: 2892

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V,

Ki te hiahia
FDQ7236AS

FDQ7236AS

Wahanga Tapeke: 2900

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A, 11A, Rds Kei (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SSD2025TF

SSD2025TF

Wahanga Tapeke: 2716

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
MMDF2C03HDR2

MMDF2C03HDR2

Wahanga Tapeke: 2708

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, 3A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
HUFA76404DK8T

HUFA76404DK8T

Wahanga Tapeke: 2700

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 62V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 3.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
NDH8304P

NDH8304P

Wahanga Tapeke: 2758

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
MCH6604-TL-E

MCH6604-TL-E

Wahanga Tapeke: 142874

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA, Rds Kei (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

Ki te hiahia
NTJD1155LT1

NTJD1155LT1

Wahanga Tapeke: 2754

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
ZXMD63N02XTC

ZXMD63N02XTC

Wahanga Tapeke: 2710

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
DMC62D0SVQ-7

DMC62D0SVQ-7

Wahanga Tapeke: 24308

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 571mA (Ta), 304mA (Ta), Rds Kei (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, 6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
VQ1006P

VQ1006P

Wahanga Tapeke: 2955

Momo FET: 4 N-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA, Rds Kei (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SIA513DJ-T1-GE3

SIA513DJ-T1-GE3

Wahanga Tapeke: 2783

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
VQ3001P-E3

VQ3001P-E3

Wahanga Tapeke: 2909

Momo FET: 2 N and 2 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 850mA, 600mA, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SI7946DP-T1-E3

SI7946DP-T1-E3

Wahanga Tapeke: 2803

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia
SI4952DY-T1-E3

SI4952DY-T1-E3

Wahanga Tapeke: 3283

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
SIF912EDZ-T1-E3

SIF912EDZ-T1-E3

Wahanga Tapeke: 3336

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI4501ADY-T1-GE3

SI4501ADY-T1-GE3

Wahanga Tapeke: 2879

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, 4.1A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Ki te hiahia
SI1958DH-T1-E3

SI1958DH-T1-E3

Wahanga Tapeke: 2701

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Ki te hiahia
SI4908DY-T1-E3

SI4908DY-T1-E3

Wahanga Tapeke: 2706

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
SI4947ADY-T1-E3

SI4947ADY-T1-E3

Wahanga Tapeke: 2709

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
SI9934BDY-T1-GE3

SI9934BDY-T1-GE3

Wahanga Tapeke: 2797

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia
SSM6L09FUTE85LF

SSM6L09FUTE85LF

Wahanga Tapeke: 24307

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA, 200mA, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V, Vgs (th) (Max) @ Id: 1.8V @ 100µA,

Ki te hiahia
TPCL4201(TE85L,F)

TPCL4201(TE85L,F)

Wahanga Tapeke: 2892

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Ki te hiahia
IRF7331TR

IRF7331TR

Wahanga Tapeke: 5360

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia
IRF7307QTRPBF

IRF7307QTRPBF

Wahanga Tapeke: 2792

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A, 4.3A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia
IRF9952PBF

IRF9952PBF

Wahanga Tapeke: 2709

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, 2.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
IRF9395MTR1PBF

IRF9395MTR1PBF

Wahanga Tapeke: 2948

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 50µA,

Ki te hiahia
UPA2375T1P-E1-A

UPA2375T1P-E1-A

Wahanga Tapeke: 126687

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive,

Ki te hiahia
RJM0306JSP-01#J0

RJM0306JSP-01#J0

Wahanga Tapeke: 2927

Momo FET: 2 N and 2 P-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V,

Ki te hiahia
PMGD175XN,115

PMGD175XN,115

Wahanga Tapeke: 3339

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 900mA, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
PMGD400UN,115

PMGD400UN,115

Wahanga Tapeke: 2691

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 710mA, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
EM6K6T2R

EM6K6T2R

Wahanga Tapeke: 176106

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia
TT8M1TR

TT8M1TR

Wahanga Tapeke: 124589

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia
PHC2300,118

PHC2300,118

Wahanga Tapeke: 186484

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 340mA, 235mA, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Ki te hiahia