Transistors - FETs, MOSFETs - Huinga

FDS6912

Wahanga Tapeke: 99723

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

FDM2509NZ

Wahanga Tapeke: 2731

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 8.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

NTUD3127CT5G

Wahanga Tapeke: 2739

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160mA, 140mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

FDY2001PZ

Wahanga Tapeke: 2782

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

NTJD4401NT2G

Wahanga Tapeke: 2745

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 630mA, Rds Kei (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

FDC6000NZ

Wahanga Tapeke: 2733

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

NTLJD4150PTBG

Wahanga Tapeke: 2781

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, Rds Kei (Max) @ Id, Vgs: 135 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

FDG6322C_D87Z

Wahanga Tapeke: 2704

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, 410mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

NTL4502NT1

Wahanga Tapeke: 2702

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

ECH8601M-C-TL-H

Wahanga Tapeke: 2940

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V,

Ki te hiahia

NTJD4152PT1

Wahanga Tapeke: 2693

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 880mA, Rds Kei (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

NDS9936

Wahanga Tapeke: 2706

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

EFC6601R-A-TR

Wahanga Tapeke: 185411

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive,

Ki te hiahia

NDS9959

Wahanga Tapeke: 2628

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

IRF7325

Wahanga Tapeke: 2634

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.8A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

IRF7379PBF

Wahanga Tapeke: 2664

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, 4.3A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

IRF7754

Wahanga Tapeke: 2962

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

IRF8513PBF

Wahanga Tapeke: 2834

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 11A, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Ki te hiahia

IRF7338TRPBF

Wahanga Tapeke: 2782

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, 3A, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

IRF7750TR

Wahanga Tapeke: 2689

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

IRF8313PBF

Wahanga Tapeke: 2835

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.7A, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Ki te hiahia

IRF7379QTRPBF

Wahanga Tapeke: 2818

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, 4.3A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

IRF7101PBF

Wahanga Tapeke: 2712

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

SI4906DY-T1-GE3

Wahanga Tapeke: 2837

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

SI7842DP-T1-GE3

Wahanga Tapeke: 2811

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia

SI7218DN-T1-GE3

Wahanga Tapeke: 99158

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

SMMA511DJ-T1-GE3

Wahanga Tapeke: 2895

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

SI6924AEDQ-T1-GE3

Wahanga Tapeke: 2794

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 28V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

SI4952DY-T1-GE3

Wahanga Tapeke: 3339

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

SI3850ADV-T1-GE3

Wahanga Tapeke: 2805

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A, 960mA, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

SI4388DY-T1-E3

Wahanga Tapeke: 2702

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.7A, 11.3A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

SI6983DQ-T1-GE3

Wahanga Tapeke: 2899

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 400µA,

Ki te hiahia