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Rfqs / ota
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Transistors - FETs, MOSFETs - Huinga

FDS8926A
ON Semiconductor

FDS8926A

Wahanga Tapeke: 2702

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
FDW2502P
ON Semiconductor

FDW2502P

Wahanga Tapeke: 2769

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
FDW2508P
ON Semiconductor

FDW2508P

Wahanga Tapeke: 2776

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
FDD8424H-F085A
ON Semiconductor

FDD8424H-F085A

Wahanga Tapeke: 2940

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, 6.5A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
EFC6612R-A-TF
ON Semiconductor

EFC6612R-A-TF

Wahanga Tapeke: 2936

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, 2.5V Drive,

Ki te hiahia
ECH8652-TL-H
ON Semiconductor

ECH8652-TL-H

Wahanga Tapeke: 2893

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V,

Ki te hiahia
NTHD4102PT3G
ON Semiconductor

NTHD4102PT3G

Wahanga Tapeke: 2764

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI9936DY
ON Semiconductor

SI9936DY

Wahanga Tapeke: 2776

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
NDC7002N_SB9G007
ON Semiconductor

NDC7002N_SB9G007

Wahanga Tapeke: 2756

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 510mA, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
FW906-TL-E
ON Semiconductor

FW906-TL-E

Wahanga Tapeke: 2911

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 6A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V,

Ki te hiahia
VEC2315-TL-H
ON Semiconductor

VEC2315-TL-H

Wahanga Tapeke: 2838

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 137 mOhm @ 1.5A, 10V,

Ki te hiahia
SI3951DV-T1-E3
Vishay Siliconix

SI3951DV-T1-E3

Wahanga Tapeke: 2720

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, Rds Kei (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
VQ1001P
Vishay Siliconix

VQ1001P

Wahanga Tapeke: 2888

Momo FET: 4 N-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 830mA, Rds Kei (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SI6955ADQ-T1-GE3
Vishay Siliconix

SI6955ADQ-T1-GE3

Wahanga Tapeke: 3376

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
SI7983DP-T1-E3
Vishay Siliconix

SI7983DP-T1-E3

Wahanga Tapeke: 2716

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 600µA,

Ki te hiahia
SI8904EDB-T2-E1
Vishay Siliconix

SI8904EDB-T2-E1

Wahanga Tapeke: 2770

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Ki te hiahia
SI4511DY-T1-GE3
Vishay Siliconix

SI4511DY-T1-GE3

Wahanga Tapeke: 2835

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.2A, 4.6A, Rds Kei (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Ki te hiahia
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8207(TE12L,Q)

Wahanga Tapeke: 2742

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Ki te hiahia
IRF9389PBF
Infineon Technologies

IRF9389PBF

Wahanga Tapeke: 2968

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A, 4.6A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 10µA,

Ki te hiahia
IRF7530PBF
Infineon Technologies

IRF7530PBF

Wahanga Tapeke: 3352

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia
IRF7103QTRPBF
Infineon Technologies

IRF7103QTRPBF

Wahanga Tapeke: 2795

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
IPG20N06S3L-23
Infineon Technologies

IPG20N06S3L-23

Wahanga Tapeke: 2870

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Ki te hiahia
IRF5851
Infineon Technologies

IRF5851

Wahanga Tapeke: 2672

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, 2.2A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Ki te hiahia
IRF8910GPBF
Infineon Technologies

IRF8910GPBF

Wahanga Tapeke: 2804

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

Ki te hiahia
IRF7905PBF
Infineon Technologies

IRF7905PBF

Wahanga Tapeke: 2764

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.8A, 8.9A, Rds Kei (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,

Ki te hiahia
IRF7307TRPBF
Infineon Technologies

IRF7307TRPBF

Wahanga Tapeke: 191316

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A, 4.3A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia
PMWD19UN,518
NXP USA Inc.

PMWD19UN,518

Wahanga Tapeke: 2726

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 1mA,

Ki te hiahia
PMWD26UN,518
NXP USA Inc.

PMWD26UN,518

Wahanga Tapeke: 2668

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.8A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 1mA,

Ki te hiahia
PMWD30UN,518
NXP USA Inc.

PMWD30UN,518

Wahanga Tapeke: 2661

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 1mA,

Ki te hiahia
SP8K2FU6TB
Rohm Semiconductor

SP8K2FU6TB

Wahanga Tapeke: 118884

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
MP6K12TCR
Rohm Semiconductor

MP6K12TCR

Wahanga Tapeke: 2916

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
ZXMC3A17DN8TC
Diodes Incorporated

ZXMC3A17DN8TC

Wahanga Tapeke: 2756

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, 3.4A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
DI9942T
Diodes Incorporated

DI9942T

Wahanga Tapeke: 2655

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A,

Ki te hiahia
HAT2038R-EL-E
Renesas Electronics America

HAT2038R-EL-E

Wahanga Tapeke: 2697

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

Ki te hiahia
EPC2106
EPC

EPC2106

Wahanga Tapeke: 24307

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

Ki te hiahia
NX7002AKS,115
Nexperia USA Inc.

NX7002AKS,115

Wahanga Tapeke: 122168

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA, Rds Kei (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia