Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Huinga

IRF7750TRPBF
Infineon Technologies

IRF7750TRPBF

Wahanga Tapeke: 2795

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia
IRF7752TRPBF
Infineon Technologies

IRF7752TRPBF

Wahanga Tapeke: 2785

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia
IRF7507TR
Infineon Technologies

IRF7507TR

Wahanga Tapeke: 2651

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.4A, 1.7A, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia
IRF7756TRPBF
Infineon Technologies

IRF7756TRPBF

Wahanga Tapeke: 2780

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia
IRF9952TR
Infineon Technologies

IRF9952TR

Wahanga Tapeke: 2705

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, 2.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
FDS4885C
ON Semiconductor

FDS4885C

Wahanga Tapeke: 2726

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A, 6A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 250µA,

Ki te hiahia
HUF76407DK8T
ON Semiconductor

HUF76407DK8T

Wahanga Tapeke: 2709

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
NTHD3100CT1
ON Semiconductor

NTHD3100CT1

Wahanga Tapeke: 2734

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 3.2A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia
ECH8662-TL-H
ON Semiconductor

ECH8662-TL-H

Wahanga Tapeke: 2834

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V,

Ki te hiahia
FDQ7238AS
ON Semiconductor

FDQ7238AS

Wahanga Tapeke: 2841

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A, 11A, Rds Kei (Max) @ Id, Vgs: 13.2 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
NTQD6866R2
ON Semiconductor

NTQD6866R2

Wahanga Tapeke: 2733

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia
EFC4618R-TR
ON Semiconductor

EFC4618R-TR

Wahanga Tapeke: 2913

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard,

Ki te hiahia
SSD2007ASTF
ON Semiconductor

SSD2007ASTF

Wahanga Tapeke: 2740

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia
SI4944DY-T1-E3
Vishay Siliconix

SI4944DY-T1-E3

Wahanga Tapeke: 2773

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.3A, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI1555DL-T1-E3
Vishay Siliconix

SI1555DL-T1-E3

Wahanga Tapeke: 3341

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 660mA, 570mA, Rds Kei (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia
SI1029X-T1-E3
Vishay Siliconix

SI1029X-T1-E3

Wahanga Tapeke: 2706

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 305mA, 190mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
SI4992EY-T1-GE3
Vishay Siliconix

SI4992EY-T1-GE3

Wahanga Tapeke: 3302

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI4923DY-T1-GE3
Vishay Siliconix

SI4923DY-T1-GE3

Wahanga Tapeke: 2800

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI4973DY-T1-E3
Vishay Siliconix

SI4973DY-T1-E3

Wahanga Tapeke: 2800

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI7842DP-T1-E3
Vishay Siliconix

SI7842DP-T1-E3

Wahanga Tapeke: 2760

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
SI4340DY-T1-E3
Vishay Siliconix

SI4340DY-T1-E3

Wahanga Tapeke: 2736

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A, 9.9A, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia
SI9926BDY-T1-E3
Vishay Siliconix

SI9926BDY-T1-E3

Wahanga Tapeke: 2741

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI6981DQ-T1-E3
Vishay Siliconix

SI6981DQ-T1-E3

Wahanga Tapeke: 2748

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 300µA,

Ki te hiahia
SI7925DN-T1-E3
Vishay Siliconix

SI7925DN-T1-E3

Wahanga Tapeke: 2813

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SI6544BDQ-T1-E3
Vishay Siliconix

SI6544BDQ-T1-E3

Wahanga Tapeke: 2797

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A, 3.8A, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI7540DP-T1-GE3
Vishay Siliconix

SI7540DP-T1-GE3

Wahanga Tapeke: 2788

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, 5.7A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI4914DY-T1-E3
Vishay Siliconix

SI4914DY-T1-E3

Wahanga Tapeke: 2801

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, 5.7A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
GWM160-0055X1-SLSAM
IXYS

GWM160-0055X1-SLSAM

Wahanga Tapeke: 2774

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

Ki te hiahia
STS4DNF30L
STMicroelectronics

STS4DNF30L

Wahanga Tapeke: 2904

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
PMDPB56XN,115
NXP USA Inc.

PMDPB56XN,115

Wahanga Tapeke: 2868

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A, Rds Kei (Max) @ Id, Vgs: 73 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
ZXMD63N03XTC
Diodes Incorporated

ZXMD63N03XTC

Wahanga Tapeke: 2755

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A, Rds Kei (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
ZXMN6A11DN8TC
Diodes Incorporated

ZXMN6A11DN8TC

Wahanga Tapeke: 2682

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
ZXMC4A16DN8TC
Diodes Incorporated

ZXMC4A16DN8TC

Wahanga Tapeke: 2674

Momo FET: N and P-Channel Complementary, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), 4.7A (Ta), Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, 60 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250mA (Min),

Ki te hiahia
JAN2N7335
Microsemi Corporation

JAN2N7335

Wahanga Tapeke: 2942

Momo FET: 4 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 750mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia
TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

Wahanga Tapeke: 2829

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Ki te hiahia
CMKDM8005 TR
Central Semiconductor Corp

CMKDM8005 TR

Wahanga Tapeke: 164283

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 650mA, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia