Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

SQ3461EV-T1_GE3

Vishay Siliconix

SQ3461EV-T1_GE3

Wahanga Tapeke: 16248

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.9A, 4.5V,

Momotae

Vishay Siliconix

IRFBA22N50APBF

Wahanga Tapeke: 9656

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V,

Momotae

SI7615CDN-T1-GE3

Vishay Siliconix

SI7615CDN-T1-GE3

Wahanga Tapeke: 117745

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 12A, 4.5V,

Momotae

SI7613DN-T1-GE3

Vishay Siliconix

SI7613DN-T1-GE3

Wahanga Tapeke: 153465

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.7 mOhm @ 17A, 10V,

Momotae

SIRC06DP-T1-GE3

Vishay Siliconix

SIRC06DP-T1-GE3

Wahanga Tapeke: 16278

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Ta), 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

IRFL9110PBF

Wahanga Tapeke: 9789

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 660mA, 10V,

Momotae

SIR668ADP-T1-RE3

Vishay Siliconix

SIR668ADP-T1-RE3

Wahanga Tapeke: 16215

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 93.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Momotae

SIRA64DP-T1-RE3

Vishay Siliconix

SIRA64DP-T1-RE3

Wahanga Tapeke: 16262

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.1 mOhm @ 10A, 10V,

Momotae

Vishay Siliconix

IRC630PBF

Wahanga Tapeke: 9703

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V,

Momotae

Vishay Siliconix

IRC640PBF

Wahanga Tapeke: 9672

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Momotae

SIR158DP-T1-GE3

Vishay Siliconix

SIR158DP-T1-GE3

Wahanga Tapeke: 80850

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

IRC730PBF

Wahanga Tapeke: 9620

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V,

Momotae

SI5476DU-T1-GE3

Vishay Siliconix

SI5476DU-T1-GE3

Wahanga Tapeke: 125161

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V,

Momotae

Vishay Siliconix

IRC840PBF

Wahanga Tapeke: 9647

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

Momotae

SIRA22DP-T1-RE3

Vishay Siliconix

SIRA22DP-T1-RE3

Wahanga Tapeke: 16213

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.76 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

IRFB16N60LPBF

Wahanga Tapeke: 9618

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 460 mOhm @ 9A, 10V,

Momotae

SIRA96DP-T1-GE3

Vishay Siliconix

SIRA96DP-T1-GE3

Wahanga Tapeke: 109322

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.8 mOhm @ 10A, 10V,

Momotae

Vishay Siliconix

IRFL9014PBF

Wahanga Tapeke: 5643

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V,

Momotae

Vishay Siliconix

SIHW47N65E-GE3

Wahanga Tapeke: 9529

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 47A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V,

Momotae

Vishay Siliconix

IRFR310TRRPBF

Wahanga Tapeke: 9801

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V,

Momotae

SI2333DS-T1-GE3

Vishay Siliconix

SI2333DS-T1-GE3

Wahanga Tapeke: 190207

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V,

Momotae

Vishay Siliconix

IRFU4105ZTRL

Wahanga Tapeke: 9349

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V,

Momotae

Vishay Siliconix

IRLL1503TR

Wahanga Tapeke: 9260

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V,

Momotae

SQM110P04-04L-GE3

Vishay Siliconix

SQM110P04-04L-GE3

Wahanga Tapeke: 9420

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V,

Momotae

Vishay Siliconix

SI1058X-T1-GE3

Wahanga Tapeke: 9419

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V,

Momotae

Vishay Siliconix

SI1303DL-T1-E3

Wahanga Tapeke: 9355

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 670mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V,

Momotae

Vishay Siliconix

IRFB17N60K

Wahanga Tapeke: 9329

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V,

Momotae

Vishay Siliconix

SI4493DY-T1-E3

Wahanga Tapeke: 9378

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V,

Momotae

SUD50N02-06P-E3

Vishay Siliconix

SUD50N02-06P-E3

Wahanga Tapeke: 64931

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V,

Momotae

SIHP050N60E-GE3

Vishay Siliconix

SIHP050N60E-GE3

Wahanga Tapeke: 9320

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 23A, 10V,

Momotae

Vishay Siliconix

IRFU4105ZTRR

Wahanga Tapeke: 9357

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V,

Momotae

Vishay Siliconix

IRFIZ46G

Wahanga Tapeke: 9274

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V,

Momotae

Vishay Siliconix

IRF9530SPBF

Wahanga Tapeke: 36695

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V,

Momotae

Vishay Siliconix

SI7407DN-T1-E3

Wahanga Tapeke: 9422

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 15.6A, 4.5V,

Momotae

SI4004DY-T1-GE3

Vishay Siliconix

SI4004DY-T1-GE3

Wahanga Tapeke: 9459

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V,

Momotae

SI7380ADP-T1-GE3

Vishay Siliconix

SI7380ADP-T1-GE3

Wahanga Tapeke: 5947

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V,

Momotae

3600

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