Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 100

SIHF8N50L-E3

Wahanga Tapeke: 9448

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V,

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Vishay Siliconix

SI7445DP-T1-GE3

Wahanga Tapeke: 9422

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V,

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Vishay Siliconix

IRF1405ZTRL

Wahanga Tapeke: 9324

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V,

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Vishay Siliconix

SI1050X-T1-E3

Wahanga Tapeke: 9342

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.34A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V,

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Vishay Siliconix

SUD50P04-13L-GE3

Wahanga Tapeke: 5637

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V,

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Vishay Siliconix

IRF644NSTRR

Wahanga Tapeke: 9213

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V,

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Vishay Siliconix

IRF840ASTRR

Wahanga Tapeke: 9078

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

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Vishay Siliconix

IRF520STRL

Wahanga Tapeke: 8998

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V,

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Vishay Siliconix

IRF9Z24STRL

Wahanga Tapeke: 5646

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V,

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Vishay Siliconix

IRFZ14L

Wahanga Tapeke: 9138

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V,

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Vishay Siliconix

IRLZ44STRR

Wahanga Tapeke: 8989

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V,

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Vishay Siliconix

IRFI710G

Wahanga Tapeke: 5984

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Ta),

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Vishay Siliconix

IRFB9N30A

Wahanga Tapeke: 9119

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V,

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Vishay Siliconix

IRFR1N60ATRL

Wahanga Tapeke: 9151

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V,

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Vishay Siliconix

IRFR9210TRR

Wahanga Tapeke: 5998

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V,

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Vishay Siliconix

IRFI9520G

Wahanga Tapeke: 8974

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.1A, 10V,

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Vishay Siliconix

IRF740LCL

Wahanga Tapeke: 9071

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V,

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Vishay Siliconix

IRF9530STRR

Wahanga Tapeke: 9009

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V,

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Vishay Siliconix

IRFS9N60ATRR

Wahanga Tapeke: 9054

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V,

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Vishay Siliconix

IRFR010

Wahanga Tapeke: 9137

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V,

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Vishay Siliconix

IRFBC40AL

Wahanga Tapeke: 5988

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V,

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Vishay Siliconix

IRFI9610G

Wahanga Tapeke: 9039

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V,

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Vishay Siliconix

IRFZ24STRR

Wahanga Tapeke: 9137

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V,

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Vishay Siliconix

IRFSL9N60ATRR

Wahanga Tapeke: 9118

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V,

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Vishay Siliconix

IRF510L

Wahanga Tapeke: 9028

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Tc), Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V,

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Vishay Siliconix

IRFI624G

Wahanga Tapeke: 9131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V,

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Vishay Siliconix

IRFI9640G

Wahanga Tapeke: 8954

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 3.7A, 10V,

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Vishay Siliconix

IRF9610STRL

Wahanga Tapeke: 9022

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V,

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Vishay Siliconix

IRL630

Wahanga Tapeke: 6006

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V,

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Vishay Siliconix

IRF737LCS

Wahanga Tapeke: 8995

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V,

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Vishay Siliconix

IRFR014TRL

Wahanga Tapeke: 9029

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V,

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Vishay Siliconix

IRF9Z24S

Wahanga Tapeke: 9145

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V,

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Vishay Siliconix

IRF730ASTRL

Wahanga Tapeke: 8984

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V,

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Vishay Siliconix

IRFR9220TR

Wahanga Tapeke: 9114

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V,

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Vishay Siliconix

IRF840STRL

Wahanga Tapeke: 9049

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

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Vishay Siliconix

IRF720STRR

Wahanga Tapeke: 5940

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V,

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