Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Kotahi

  • Kāinga
  •  
  • Transistors - FETs, MOSFETs - Kotahi
SI8445DB-T2-E1
Vishay Siliconix

SI8445DB-T2-E1

Wahanga Tapeke: 9397

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 84 mOhm @ 1A, 4.5V,

Momotae
SIA430DJ-T1-GE3
Vishay Siliconix

SIA430DJ-T1-GE3

Wahanga Tapeke: 164057

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V,

Momotae
SUD50N10-34P-T4-E3
Vishay Siliconix

SUD50N10-34P-T4-E3

Wahanga Tapeke: 5990

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Ta), 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 7A, 10V,

Momotae
SI6404DQ-T1-GE3
Vishay Siliconix

SI6404DQ-T1-GE3

Wahanga Tapeke: 9397

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V,

Momotae
SI4346DY-T1-GE3
Vishay Siliconix

SI4346DY-T1-GE3

Wahanga Tapeke: 176121

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V,

Momotae
SI4845DY-T1-E3
Vishay Siliconix

SI4845DY-T1-E3

Wahanga Tapeke: 9285

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 2A, 4.5V,

Momotae
SI7120DN-T1-E3
Vishay Siliconix

SI7120DN-T1-E3

Wahanga Tapeke: 9346

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V,

Momotae
SI1405DL-T1-E3
Vishay Siliconix

SI1405DL-T1-E3

Wahanga Tapeke: 9475

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V,

Momotae
SI4403BDY-T1-GE3
Vishay Siliconix

SI4403BDY-T1-GE3

Wahanga Tapeke: 9462

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 9.9A, 4.5V,

Momotae
IRF3205ZSTRL
Vishay Siliconix

IRF3205ZSTRL

Wahanga Tapeke: 9333

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V,

Momotae
SI1073X-T1-GE3
Vishay Siliconix

SI1073X-T1-GE3

Wahanga Tapeke: 9407

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V,

Momotae
SI1032X-T1-E3
Vishay Siliconix

SI1032X-T1-E3

Wahanga Tapeke: 9301

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V,

Momotae
SI7446BDP-T1-E3
Vishay Siliconix

SI7446BDP-T1-E3

Wahanga Tapeke: 9454

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V,

Momotae
SI7860ADP-T1-E3
Vishay Siliconix

SI7860ADP-T1-E3

Wahanga Tapeke: 6016

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V,

Momotae
SUM90N08-6M2P-E3
Vishay Siliconix

SUM90N08-6M2P-E3

Wahanga Tapeke: 9421

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V,

Momotae
SI1307EDL-T1-E3
Vishay Siliconix

SI1307EDL-T1-E3

Wahanga Tapeke: 9300

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 850mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V,

Momotae
SI4654DY-T1-E3
Vishay Siliconix

SI4654DY-T1-E3

Wahanga Tapeke: 9386

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V,

Momotae
SI3433BDV-T1-GE3
Vishay Siliconix

SI3433BDV-T1-GE3

Wahanga Tapeke: 6012

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V,

Momotae
SUD45P03-15-E3
Vishay Siliconix

SUD45P03-15-E3

Wahanga Tapeke: 9467

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V,

Momotae
IRF7822TRR
Vishay Siliconix

IRF7822TRR

Wahanga Tapeke: 5971

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V,

Momotae
SI7856ADP-T1-E3
Vishay Siliconix

SI7856ADP-T1-E3

Wahanga Tapeke: 9402

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V,

Momotae
SI3853DV-T1-GE3
Vishay Siliconix

SI3853DV-T1-GE3

Wahanga Tapeke: 9424

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V,

Momotae
SI4654DY-T1-GE3
Vishay Siliconix

SI4654DY-T1-GE3

Wahanga Tapeke: 9408

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V,

Momotae
SI5435BDC-T1-GE3
Vishay Siliconix

SI5435BDC-T1-GE3

Wahanga Tapeke: 9326

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V,

Momotae
IRF3205ZSTRR
Vishay Siliconix

IRF3205ZSTRR

Wahanga Tapeke: 9420

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V,

Momotae
IRFZ44RSTRR
Vishay Siliconix

IRFZ44RSTRR

Wahanga Tapeke: 9298

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V,

Momotae
SI3493DV-T1-E3
Vishay Siliconix

SI3493DV-T1-E3

Wahanga Tapeke: 9454

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 7A, 4.5V,

Momotae
IRF2807ZSTRR
Vishay Siliconix

IRF2807ZSTRR

Wahanga Tapeke: 5982

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V,

Momotae
SI4390DY-T1-GE3
Vishay Siliconix

SI4390DY-T1-GE3

Wahanga Tapeke: 53075

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V,

Momotae
SIHG64N65E-GE3
Vishay Siliconix

SIHG64N65E-GE3

Wahanga Tapeke: 5983

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 64A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 32A, 10V,

Momotae
SI1405DL-T1-GE3
Vishay Siliconix

SI1405DL-T1-GE3

Wahanga Tapeke: 9465

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V,

Momotae
IRFU4105ZTR
Vishay Siliconix

IRFU4105ZTR

Wahanga Tapeke: 9379

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V,

Momotae
SI4438DY-T1-GE3
Vishay Siliconix

SI4438DY-T1-GE3

Wahanga Tapeke: 9427

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V,

Momotae
SI4110DY-T1-GE3
Vishay Siliconix

SI4110DY-T1-GE3

Wahanga Tapeke: 9368

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V,

Momotae
SUM85N03-06P-E3
Vishay Siliconix

SUM85N03-06P-E3

Wahanga Tapeke: 9382

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V,

Momotae
SUM110N06-3M4L-E3
Vishay Siliconix

SUM110N06-3M4L-E3

Wahanga Tapeke: 9342

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V,

Momotae