Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Vishay Siliconix

SI4825DY-T1-E3

Wahanga Tapeke: 432

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V,

Momotae

Vishay Siliconix

IRFRC20PBF

Wahanga Tapeke: 72548

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V,

Momotae

SI2303BDS-T1-E3

Vishay Siliconix

SI2303BDS-T1-E3

Wahanga Tapeke: 464

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.49A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V,

Momotae

Vishay Siliconix

SI4876DY-T1-E3

Wahanga Tapeke: 447

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V,

Momotae

Vishay Siliconix

SI4466DY-T1-E3

Wahanga Tapeke: 396

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V,

Momotae

Vishay Siliconix

SI5484DU-T1-E3

Wahanga Tapeke: 492

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V,

Momotae

Vishay Siliconix

SI3475DV-T1-E3

Wahanga Tapeke: 6120

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 950mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V,

Momotae

Vishay Siliconix

SI8404DB-T1-E1

Wahanga Tapeke: 488

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 1A, 4.5V,

Momotae

SI4435DDY-T1-E3

Vishay Siliconix

SI4435DDY-T1-E3

Wahanga Tapeke: 165891

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 9.1A, 10V,

Momotae

SI4850EY-T1-GE3

Vishay Siliconix

SI4850EY-T1-GE3

Wahanga Tapeke: 107397

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V,

Momotae

SI4401FDY-T1-GE3

Vishay Siliconix

SI4401FDY-T1-GE3

Wahanga Tapeke: 16596

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.9A (Ta), 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14.2 mOhm @ 10A, 10V,

Momotae

SI4483ADY-T1-GE3

Vishay Siliconix

SI4483ADY-T1-GE3

Wahanga Tapeke: 135861

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.8 mOhm @ 10A, 10V,

Momotae

Vishay Siliconix

IRFL110TRPBF

Wahanga Tapeke: 195752

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V,

Momotae

Vishay Siliconix

IRF540PBF

Wahanga Tapeke: 38777

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V,

Momotae

Vishay Siliconix

IRLU014PBF

Wahanga Tapeke: 69107

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V,

Momotae

Vishay Siliconix

IRF520PBF

Wahanga Tapeke: 69178

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V,

Momotae

SI4435FDY-T1-GE3

Vishay Siliconix

SI4435FDY-T1-GE3

Wahanga Tapeke: 16600

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V,

Momotae

SI4463CDY-T1-GE3

Vishay Siliconix

SI4463CDY-T1-GE3

Wahanga Tapeke: 176137

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.6A (Ta), 49A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V,

Momotae

SI4465ADY-T1-GE3

Vishay Siliconix

SI4465ADY-T1-GE3

Wahanga Tapeke: 78275

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 14A, 4.5V,

Momotae

SI9407BDY-T1-GE3

Vishay Siliconix

SI9407BDY-T1-GE3

Wahanga Tapeke: 191332

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 3.2A, 10V,

Momotae

SI4427BDY-T1-E3

Vishay Siliconix

SI4427BDY-T1-E3

Wahanga Tapeke: 134797

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V,

Momotae

SI4477DY-T1-GE3

Vishay Siliconix

SI4477DY-T1-GE3

Wahanga Tapeke: 113273

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 18A, 4.5V,

Momotae

SI4403CDY-T1-GE3

Vishay Siliconix

SI4403CDY-T1-GE3

Wahanga Tapeke: 119611

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 9A, 4.5V,

Momotae

Vishay Siliconix

IRFL014TRPBF

Wahanga Tapeke: 96397

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V,

Momotae

Vishay Siliconix

IRF530PBF

Wahanga Tapeke: 66592

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V,

Momotae

SI4154DY-T1-GE3

Vishay Siliconix

SI4154DY-T1-GE3

Wahanga Tapeke: 110650

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

IRFD210PBF

Wahanga Tapeke: 72598

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 600mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V,

Momotae

SQD50N04-5M6_T4GE3

Vishay Siliconix

SQD50N04-5M6_T4GE3

Wahanga Tapeke: 16520

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V,

Momotae

SI4894BDY-T1-E3

Vishay Siliconix

SI4894BDY-T1-E3

Wahanga Tapeke: 125168

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V,

Momotae

SI4848ADY-T1-GE3

Vishay Siliconix

SI4848ADY-T1-GE3

Wahanga Tapeke: 16523

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 84 mOhm @ 3.9A, 10V,

Momotae

SIHB24N65EF-GE3

Vishay Siliconix

SIHB24N65EF-GE3

Wahanga Tapeke: 11106

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 156 mOhm @ 12A, 10V,

Momotae

Vishay Siliconix

IRFD024PBF

Wahanga Tapeke: 56811

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V,

Momotae

SIHG050N60E-GE3

Vishay Siliconix

SIHG050N60E-GE3

Wahanga Tapeke: 9747

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 23A, 10V,

Momotae

Vishay Siliconix

SIHD12N50E-GE3

Wahanga Tapeke: 37002

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V,

Momotae

SQM120N06-3M5L_GE3

Vishay Siliconix

SQM120N06-3M5L_GE3

Wahanga Tapeke: 35073

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V,

Momotae

SIHG47N60EF-GE3

Vishay Siliconix

SIHG47N60EF-GE3

Wahanga Tapeke: 6708

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 47A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 67 mOhm @ 24A, 10V,

Momotae

3600

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