Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Vishay Siliconix

SI1013X-T1-E3

Wahanga Tapeke: 395

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V,

Momotae

Vishay Siliconix

SUM23N15-73-E3

Wahanga Tapeke: 499

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 73 mOhm @ 15A, 10V,

Momotae

SI5433BDC-T1-E3

Vishay Siliconix

SI5433BDC-T1-E3

Wahanga Tapeke: 452

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V,

Momotae

SUM33N20-60P-E3

Vishay Siliconix

SUM33N20-60P-E3

Wahanga Tapeke: 484

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, 15V, Rds Kei (Max) @ Id, Vgs: 59 mOhm @ 20A, 15V,

Momotae

Vishay Siliconix

SI5482DU-T1-E3

Wahanga Tapeke: 478

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V,

Momotae

Vishay Siliconix

SI7411DN-T1-E3

Wahanga Tapeke: 439

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V,

Momotae

SUM50N06-16L-E3

Vishay Siliconix

SUM50N06-16L-E3

Wahanga Tapeke: 6049

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

SI7462DP-T1-E3

Wahanga Tapeke: 466

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V,

Momotae

Vishay Siliconix

SI6410DQ-T1-E3

Wahanga Tapeke: 464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 7.8A, 10V,

Momotae

SUM09N20-270-E3

Vishay Siliconix

SUM09N20-270-E3

Wahanga Tapeke: 470

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 5A, 10V,

Momotae

SUM90N08-4M8P-E3

Vishay Siliconix

SUM90N08-4M8P-E3

Wahanga Tapeke: 505

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

SI3853DV-T1-E3

Wahanga Tapeke: 448

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V,

Momotae

SUM75N06-09L-E3

Vishay Siliconix

SUM75N06-09L-E3

Wahanga Tapeke: 464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V,

Momotae

Vishay Siliconix

SI2309DS-T1-E3

Wahanga Tapeke: 393

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 340 mOhm @ 1.25A, 10V,

Momotae

Vishay Siliconix

SI4398DY-T1-E3

Wahanga Tapeke: 6089

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

Momotae

Vishay Siliconix

SI4418DY-T1-E3

Wahanga Tapeke: 393

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V,

Momotae

Vishay Siliconix

SIA450DJ-T1-E3

Wahanga Tapeke: 422

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.52A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V,

Momotae

Vishay Siliconix

SI7802DN-T1-E3

Wahanga Tapeke: 480

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.24A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V,

Momotae

Vishay Siliconix

SI1450DH-T1-E3

Wahanga Tapeke: 464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.53A (Ta), 6.04A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V,

Momotae

Vishay Siliconix

SIE806DF-T1-E3

Wahanga Tapeke: 510

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

Momotae

Vishay Siliconix

SI1031R-T1-E3

Wahanga Tapeke: 405

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 140mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V,

Momotae

Vishay Siliconix

SI4470EY-T1-E3

Wahanga Tapeke: 439

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V,

Momotae

Vishay Siliconix

SI3867DV-T1-E3

Wahanga Tapeke: 467

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V,

Momotae

Vishay Siliconix

SI7366DP-T1-E3

Wahanga Tapeke: 451

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

SI3483DV-T1-E3

Wahanga Tapeke: 484

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V,

Momotae

Vishay Siliconix

SI5473DC-T1-E3

Wahanga Tapeke: 430

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V,

Momotae

Vishay Siliconix

SI4484EY-T1-E3

Wahanga Tapeke: 481

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 6.9A, 10V,

Momotae

SI1300BDL-T1-E3

Vishay Siliconix

SI1300BDL-T1-E3

Wahanga Tapeke: 438

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V,

Momotae

TP0610KL-TR1-E3

Vishay Siliconix

TP0610KL-TR1-E3

Wahanga Tapeke: 512

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 270mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

Momotae

SI1410EDH-T1-E3

Vishay Siliconix

SI1410EDH-T1-E3

Wahanga Tapeke: 390

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V,

Momotae

Vishay Siliconix

SI7100DN-T1-E3

Wahanga Tapeke: 478

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V,

Momotae

SI5445BDC-T1-E3

Vishay Siliconix

SI5445BDC-T1-E3

Wahanga Tapeke: 486

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V,

Momotae

Vishay Siliconix

SIA443DJ-T1-E3

Wahanga Tapeke: 471

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V,

Momotae

Vishay Siliconix

SIE820DF-T1-E3

Wahanga Tapeke: 481

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V,

Momotae

Vishay Siliconix

SI4446DY-T1-E3

Wahanga Tapeke: 6044

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V,

Momotae

Vishay Siliconix

SI7491DP-T1-E3

Wahanga Tapeke: 433

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V,

Momotae

3600

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