Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Vishay Siliconix

SI5857DU-T1-E3

Wahanga Tapeke: 494

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V,

Momotae

Vishay Siliconix

SI5858DU-T1-E3

Wahanga Tapeke: 405

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V,

Momotae

Vishay Siliconix

SI1022R-T1-E3

Wahanga Tapeke: 6114

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 330mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.25 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

SI7459DP-T1-E3

Wahanga Tapeke: 6127

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V,

Momotae

Vishay Siliconix

SI1056X-T1-E3

Wahanga Tapeke: 463

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V,

Momotae

Vishay Siliconix

SI7138DP-T1-E3

Wahanga Tapeke: 406

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 7.8 mOhm @ 19.7A, 10V,

Momotae

Vishay Siliconix

SIE822DF-T1-E3

Wahanga Tapeke: 51934

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V,

Momotae

Vishay Siliconix

SI4480DY-T1-E3

Wahanga Tapeke: 464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V,

Momotae

Vishay Siliconix

SI3499DV-T1-E3

Wahanga Tapeke: 449

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V,

Momotae

Vishay Siliconix

SI4620DY-T1-E3

Wahanga Tapeke: 190266

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), 7.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V,

Momotae

Vishay Siliconix

SI4840DY-T1-E3

Wahanga Tapeke: 448

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V,

Momotae

Vishay Siliconix

SI8415DB-T1-E1

Wahanga Tapeke: 6053

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V,

Momotae

Vishay Siliconix

SI8402DB-T1-E1

Wahanga Tapeke: 492

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V,

Momotae

Vishay Siliconix

SI7136DP-T1-E3

Wahanga Tapeke: 460

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V,

Momotae

SI3457BDV-T1-E3

Vishay Siliconix

SI3457BDV-T1-E3

Wahanga Tapeke: 467

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V,

Momotae

Vishay Siliconix

SIA810DJ-T1-E3

Wahanga Tapeke: 499

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V,

Momotae

Vishay Siliconix

SIE832DF-T1-E3

Wahanga Tapeke: 43984

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V,

Momotae

IRFS9N60ATRRPBF

Vishay Siliconix

IRFS9N60ATRRPBF

Wahanga Tapeke: 34226

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V,

Momotae

SI1304BDL-T1-E3

Vishay Siliconix

SI1304BDL-T1-E3

Wahanga Tapeke: 433

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 900mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V,

Momotae

Vishay Siliconix

SI4336DY-T1-E3

Wahanga Tapeke: 464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.25 mOhm @ 25A, 10V,

Momotae

SI7403BDN-T1-E3

Vishay Siliconix

SI7403BDN-T1-E3

Wahanga Tapeke: 6130

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V,

Momotae

Vishay Siliconix

TP0101K-T1-E3

Wahanga Tapeke: 454

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V,

Momotae

SUM36N20-54P-E3

Vishay Siliconix

SUM36N20-54P-E3

Wahanga Tapeke: 482

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, 15V, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V,

Momotae

SI3446ADV-T1-E3

Vishay Siliconix

SI3446ADV-T1-E3

Wahanga Tapeke: 467

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V,

Momotae

Vishay Siliconix

SI5406DC-T1-E3

Wahanga Tapeke: 420

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V,

Momotae

SI6435ADQ-T1-E3

Vishay Siliconix

SI6435ADQ-T1-E3

Wahanga Tapeke: 466

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 10V,

Momotae

Vishay Siliconix

SI3434DV-T1-E3

Wahanga Tapeke: 418

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 4.5V,

Momotae

Vishay Siliconix

TP0202K-T1-E3

Wahanga Tapeke: 486

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 385mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

SI1472DH-T1-E3

Wahanga Tapeke: 475

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V,

Momotae

Vishay Siliconix

SI4642DY-T1-E3

Wahanga Tapeke: 407

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

SI5486DU-T1-E3

Wahanga Tapeke: 477

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V,

Momotae

SI6463BDQ-T1-E3

Vishay Siliconix

SI6463BDQ-T1-E3

Wahanga Tapeke: 416

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V,

Momotae

SUM18N25-165-E3

Vishay Siliconix

SUM18N25-165-E3

Wahanga Tapeke: 6102

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 165 mOhm @ 14A, 10V,

Momotae

SI3456BDV-T1-E3

Vishay Siliconix

SI3456BDV-T1-E3

Wahanga Tapeke: 393

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V,

Momotae

Vishay Siliconix

SI1305DL-T1-E3

Wahanga Tapeke: 408

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V,

Momotae

Vishay Siliconix

SUM40N15-38-E3

Wahanga Tapeke: 51855

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V,

Momotae

3600

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