Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 100

SI4322DY-T1-E3

Wahanga Tapeke: 470

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V,

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Vishay Siliconix

SI1426DH-T1-E3

Wahanga Tapeke: 440

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V,

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Vishay Siliconix

SI6467BDQ-T1-E3

Wahanga Tapeke: 493

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V,

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Vishay Siliconix

SI3473DV-T1-E3

Wahanga Tapeke: 432

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V,

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Vishay Siliconix

SI1013R-T1-E3

Wahanga Tapeke: 425

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V,

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Vishay Siliconix

SI4483EDY-T1-E3

Wahanga Tapeke: 433

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V,

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Vishay Siliconix

SI7409ADN-T1-E3

Wahanga Tapeke: 459

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V,

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Vishay Siliconix

SI9434BDY-T1-E3

Wahanga Tapeke: 481

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V,

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Vishay Siliconix

SUB75P03-07-E3

Wahanga Tapeke: 374

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V,

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Vishay Siliconix

SI1032R-T1-E3

Wahanga Tapeke: 377

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 140mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V,

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Vishay Siliconix

SI7485DP-T1-E3

Wahanga Tapeke: 6079

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V,

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Vishay Siliconix

SI4833ADY-T1-E3

Wahanga Tapeke: 492

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V,

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Vishay Siliconix

SI5447DC-T1-E3

Wahanga Tapeke: 417

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V,

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SI1072X-T1-E3

Wahanga Tapeke: 401

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V,

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Vishay Siliconix

SIA411DJ-T1-E3

Wahanga Tapeke: 496

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V,

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Vishay Siliconix

SI7384DP-T1-E3

Wahanga Tapeke: 65757

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V,

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Vishay Siliconix

SI6459BDQ-T1-E3

Wahanga Tapeke: 465

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V,

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Vishay Siliconix

SI4621DY-T1-E3

Wahanga Tapeke: 421

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V,

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Vishay Siliconix

SI3433BDV-T1-E3

Wahanga Tapeke: 395

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V,

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Vishay Siliconix

SI3424DV-T1-E3

Wahanga Tapeke: 453

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 10V,

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Vishay Siliconix

SI1070X-T1-E3

Wahanga Tapeke: 417

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 99 mOhm @ 1.2A, 4.5V,

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Vishay Siliconix

SI5401DC-T1-E3

Wahanga Tapeke: 449

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V,

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Vishay Siliconix

SI7476DP-T1-E3

Wahanga Tapeke: 468

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V,

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Vishay Siliconix

SI1012R-T1-E3

Wahanga Tapeke: 6087

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V,

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Vishay Siliconix

SI7413DN-T1-E3

Wahanga Tapeke: 502

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V,

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Vishay Siliconix

SI8435DB-T1-E1

Wahanga Tapeke: 499

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V,

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Vishay Siliconix

IRFR420APBF

Wahanga Tapeke: 61027

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V,

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Vishay Siliconix

SI1039X-T1-E3

Wahanga Tapeke: 443

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 870mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V,

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Vishay Siliconix

SI7448DP-T1-E3

Wahanga Tapeke: 431

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V,

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Vishay Siliconix

SUM110N04-2M3L-E3

Wahanga Tapeke: 471

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V,

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Vishay Siliconix

SIA811DJ-T1-E3

Wahanga Tapeke: 422

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V,

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Vishay Siliconix

SI4835BDY-T1-E3

Wahanga Tapeke: 444

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 9.6A, 10V,

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Vishay Siliconix

SI2351DS-T1-E3

Wahanga Tapeke: 451

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 115 mOhm @ 2.4A, 4.5V,

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Vishay Siliconix

SI7344DP-T1-E3

Wahanga Tapeke: 440

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 17A, 10V,

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Vishay Siliconix

SI4396DY-T1-E3

Wahanga Tapeke: 464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V,

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Vishay Siliconix

SI1303EDL-T1-E3

Wahanga Tapeke: 437

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 670mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V,

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