Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

SIS782DN-T1-GE3

Vishay Siliconix

SIS782DN-T1-GE3

Wahanga Tapeke: 9904

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V,

Momotae

SIA850DJ-T1-GE3

Vishay Siliconix

SIA850DJ-T1-GE3

Wahanga Tapeke: 1464

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 190V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 950mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V,

Momotae

SIDR626DP-T1-GE3

Vishay Siliconix

SIDR626DP-T1-GE3

Wahanga Tapeke: 9959

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42.8A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V,

Momotae

SI3407DV-T1-GE3

Vishay Siliconix

SI3407DV-T1-GE3

Wahanga Tapeke: 142996

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 4.5V,

Momotae

Vishay Siliconix

IRFRC20TRRPBF

Wahanga Tapeke: 84916

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V,

Momotae

Vishay Siliconix

IRLZ34PBF

Wahanga Tapeke: 42900

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V,

Momotae

SIDR668DP-T1-GE3

Vishay Siliconix

SIDR668DP-T1-GE3

Wahanga Tapeke: 9965

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23.2A (Ta), 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

SIHU6N80E-GE3

Wahanga Tapeke: 9998

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 940 mOhm @ 3A, 10V,

Momotae

Vishay Siliconix

IRFR010PBF

Wahanga Tapeke: 112442

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V,

Momotae

SIE876DF-T1-GE3

Vishay Siliconix

SIE876DF-T1-GE3

Wahanga Tapeke: 1473

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V,

Momotae

SQ3419EEV-T1-GE3

Vishay Siliconix

SQ3419EEV-T1-GE3

Wahanga Tapeke: 1244

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V,

Momotae

SQS484EN-T1_GE3

Vishay Siliconix

SQS484EN-T1_GE3

Wahanga Tapeke: 191306

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 16.4A, 10V,

Momotae

SIA432DJ-T1-GE3

Vishay Siliconix

SIA432DJ-T1-GE3

Wahanga Tapeke: 148604

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V,

Momotae

Vishay Siliconix

IRFZ34PBF

Wahanga Tapeke: 44152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V,

Momotae

SI2337DS-T1-GE3

Vishay Siliconix

SI2337DS-T1-GE3

Wahanga Tapeke: 163989

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V,

Momotae

SQ3442EV-T1-GE3

Vishay Siliconix

SQ3442EV-T1-GE3

Wahanga Tapeke: 1221

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V,

Momotae

SIHA25N60EFL-E3

Vishay Siliconix

SIHA25N60EFL-E3

Wahanga Tapeke: 14046

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 146 mOhm @ 12.5A, 10V,

Momotae

SI7772DP-T1-GE3

Vishay Siliconix

SI7772DP-T1-GE3

Wahanga Tapeke: 194051

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Momotae

SISA26DN-T1-GE3

Vishay Siliconix

SISA26DN-T1-GE3

Wahanga Tapeke: 9988

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V,

Momotae

SI4410BDY-T1-E3

Vishay Siliconix

SI4410BDY-T1-E3

Wahanga Tapeke: 144634

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V,

Momotae

Vishay Siliconix

IRFU9120PBF

Wahanga Tapeke: 43383

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V,

Momotae

Vishay Siliconix

IRFR420TRLPBF

Wahanga Tapeke: 93110

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V,

Momotae

Vishay Siliconix

SI7738DP-T1-E3

Wahanga Tapeke: 43974

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 7.7A, 10V,

Momotae

SI8416DB-T1-GE3

Vishay Siliconix

SI8416DB-T1-GE3

Wahanga Tapeke: 6167

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V,

Momotae

SQ7415AEN-T1_GE3

Vishay Siliconix

SQ7415AEN-T1_GE3

Wahanga Tapeke: 142943

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V,

Momotae

SQS420EN-T1_GE3

Vishay Siliconix

SQS420EN-T1_GE3

Wahanga Tapeke: 191334

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V,

Momotae

Vishay Siliconix

SI1406DH-T1-E3

Wahanga Tapeke: 1472

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V,

Momotae

Vishay Siliconix

IRF9520PBF

Wahanga Tapeke: 72559

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V,

Momotae

SI2319DS-T1-GE3

Vishay Siliconix

SI2319DS-T1-GE3

Wahanga Tapeke: 164425

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 82 mOhm @ 3A, 10V,

Momotae

SI7892BDP-T1-GE3

Vishay Siliconix

SI7892BDP-T1-GE3

Wahanga Tapeke: 104599

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

Momotae

Vishay Siliconix

IRFR024TRLPBF

Wahanga Tapeke: 91025

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V,

Momotae

Vishay Siliconix

IRFR214TRLPBF

Wahanga Tapeke: 113500

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 1.3A, 10V,

Momotae

SIR698DP-T1-GE3

Vishay Siliconix

SIR698DP-T1-GE3

Wahanga Tapeke: 125808

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V,

Momotae

SI7464DP-T1-GE3

Vishay Siliconix

SI7464DP-T1-GE3

Wahanga Tapeke: 80856

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V,

Momotae

SQ3418EV-T1_GE3

Vishay Siliconix

SQ3418EV-T1_GE3

Wahanga Tapeke: 9903

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V,

Momotae

SIS456DN-T1-GE3

Vishay Siliconix

SIS456DN-T1-GE3

Wahanga Tapeke: 164051

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V,

Momotae

3600

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