Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Kotahi

  • Kāinga
  •  
  • Transistors - FETs, MOSFETs - Kotahi
SIA436DJ-T1-GE3
Vishay Siliconix

SIA436DJ-T1-GE3

Wahanga Tapeke: 119071

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 9.4 mOhm @ 15.7A, 4.5V,

Momotae
SI6415DQ-T1-E3
Vishay Siliconix

SI6415DQ-T1-E3

Wahanga Tapeke: 101835

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V,

Momotae
SIRA01DP-T1-GE3
Vishay Siliconix

SIRA01DP-T1-GE3

Wahanga Tapeke: 9909

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Ta), 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 15A, 10V,

Momotae
SQJ407EP-T1_GE3
Vishay Siliconix

SQJ407EP-T1_GE3

Wahanga Tapeke: 134372

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 10A, 10V,

Momotae
SIB408DK-T1-GE3
Vishay Siliconix

SIB408DK-T1-GE3

Wahanga Tapeke: 127930

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V,

Momotae
SI5468DC-T1-GE3
Vishay Siliconix

SI5468DC-T1-GE3

Wahanga Tapeke: 193145

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6.8A, 10V,

Momotae
IRL530PBF
Vishay Siliconix

IRL530PBF

Wahanga Tapeke: 51245

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V,

Momotae
IRFU9214PBF
Vishay Siliconix

IRFU9214PBF

Wahanga Tapeke: 98690

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V,

Momotae
SISH106DN-T1-GE3
Vishay Siliconix

SISH106DN-T1-GE3

Wahanga Tapeke: 9993

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V,

Momotae
SIS439DNT-T1-GE3
Vishay Siliconix

SIS439DNT-T1-GE3

Wahanga Tapeke: 185636

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 14A, 10V,

Momotae
SIR158DP-T1-RE3
Vishay Siliconix

SIR158DP-T1-RE3

Wahanga Tapeke: 9977

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V,

Momotae
SI8457DB-T1-E1
Vishay Siliconix

SI8457DB-T1-E1

Wahanga Tapeke: 116255

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 3A, 4.5V,

Momotae
SQ3418EEV-T1-GE3
Vishay Siliconix

SQ3418EEV-T1-GE3

Wahanga Tapeke: 1167

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V,

Momotae
SI5429DU-T1-GE3
Vishay Siliconix

SI5429DU-T1-GE3

Wahanga Tapeke: 1399

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V,

Momotae
SI7430DP-T1-GE3
Vishay Siliconix

SI7430DP-T1-GE3

Wahanga Tapeke: 61511

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V,

Momotae
SI5855CDC-T1-E3
Vishay Siliconix

SI5855CDC-T1-E3

Wahanga Tapeke: 130824

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V,

Momotae
SI7868ADP-T1-E3
Vishay Siliconix

SI7868ADP-T1-E3

Wahanga Tapeke: 30942

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.25 mOhm @ 20A, 10V,

Momotae
SIRA10DP-T1-GE3
Vishay Siliconix

SIRA10DP-T1-GE3

Wahanga Tapeke: 158534

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 10A, 10V,

Momotae
SQJA68EP-T1_GE3
Vishay Siliconix

SQJA68EP-T1_GE3

Wahanga Tapeke: 9941

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 92 mOhm @ 4A, 10V,

Momotae
SQ2360EES-T1-GE3
Vishay Siliconix

SQ2360EES-T1-GE3

Wahanga Tapeke: 1242

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V,

Momotae
SI1403BDL-T1-GE3
Vishay Siliconix

SI1403BDL-T1-GE3

Wahanga Tapeke: 9957

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V,

Momotae
SI7309DN-T1-E3
Vishay Siliconix

SI7309DN-T1-E3

Wahanga Tapeke: 158562

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 115 mOhm @ 3.9A, 10V,

Momotae
IRFR1N60ATRLPBF
Vishay Siliconix

IRFR1N60ATRLPBF

Wahanga Tapeke: 98672

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V,

Momotae
SIHD9N60E-GE3
Vishay Siliconix

SIHD9N60E-GE3

Wahanga Tapeke: 78467

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 368 mOhm @ 4.5A, 10V,

Momotae
SIS452DN-T1-GE3
Vishay Siliconix

SIS452DN-T1-GE3

Wahanga Tapeke: 125881

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.25 mOhm @ 20A, 10V,

Momotae
SQ1420EEH-T1-GE3
Vishay Siliconix

SQ1420EEH-T1-GE3

Wahanga Tapeke: 1196

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 1.2A, 10V,

Momotae
SIRA26DP-T1-RE3
Vishay Siliconix

SIRA26DP-T1-RE3

Wahanga Tapeke: 9924

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V,

Momotae
SI2374DS-T1-GE3
Vishay Siliconix

SI2374DS-T1-GE3

Wahanga Tapeke: 137862

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), 5.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V,

Momotae
SIRC18DP-T1-GE3
Vishay Siliconix

SIRC18DP-T1-GE3

Wahanga Tapeke: 9922

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.1 mOhm @ 15A, 10V,

Momotae
SI1499DH-T1-E3
Vishay Siliconix

SI1499DH-T1-E3

Wahanga Tapeke: 153359

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V,

Momotae
SI7113DN-T1-E3
Vishay Siliconix

SI7113DN-T1-E3

Wahanga Tapeke: 52520

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V,

Momotae
SIRC10DP-T1-GE3
Vishay Siliconix

SIRC10DP-T1-GE3

Wahanga Tapeke: 188404

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 10A, 10V,

Momotae
SIR616DP-T1-GE3
Vishay Siliconix

SIR616DP-T1-GE3

Wahanga Tapeke: 111187

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 50.5 mOhm @ 10A, 10V,

Momotae
SI7106DN-T1-GE3
Vishay Siliconix

SI7106DN-T1-GE3

Wahanga Tapeke: 141992

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V,

Momotae
SISA04DN-T1-GE3
Vishay Siliconix

SISA04DN-T1-GE3

Wahanga Tapeke: 132149

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.15 mOhm @ 15A, 10V,

Momotae
SQ3426EEV-T1-GE3
Vishay Siliconix

SQ3426EEV-T1-GE3

Wahanga Tapeke: 1231

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V,

Momotae