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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SI7317DN-T1-GE3
Vishay Siliconix

SI7317DN-T1-GE3

Wahanga Tapeke: 140959

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V,

Momotae
SIHFR1N60A-GE3
Vishay Siliconix

SIHFR1N60A-GE3

Wahanga Tapeke: 9973

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V,

Momotae
SUM110N03-04P-E3
Vishay Siliconix

SUM110N03-04P-E3

Wahanga Tapeke: 1412

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V,

Momotae
SIHD6N62E-GE3
Vishay Siliconix

SIHD6N62E-GE3

Wahanga Tapeke: 10246

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V,

Momotae
SIE820DF-T1-GE3
Vishay Siliconix

SIE820DF-T1-GE3

Wahanga Tapeke: 1474

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V,

Momotae
SI3476DV-T1-GE3
Vishay Siliconix

SI3476DV-T1-GE3

Wahanga Tapeke: 108008

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 93 mOhm @ 3.5A, 10V,

Momotae
SIRA52DP-T1-GE3
Vishay Siliconix

SIRA52DP-T1-GE3

Wahanga Tapeke: 118887

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V,

Momotae
SI3443CDV-T1-GE3
Vishay Siliconix

SI3443CDV-T1-GE3

Wahanga Tapeke: 193900

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.97A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V,

Momotae
IRFP460APBF
Vishay Siliconix

IRFP460APBF

Wahanga Tapeke: 17996

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V,

Momotae
SI2371EDS-T1-GE3
Vishay Siliconix

SI2371EDS-T1-GE3

Wahanga Tapeke: 147875

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V,

Momotae
SIS435DNT-T1-GE3
Vishay Siliconix

SIS435DNT-T1-GE3

Wahanga Tapeke: 181027

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 5.4 mOhm @ 13A, 4.5V,

Momotae
SI8439DB-T1-E1
Vishay Siliconix

SI8439DB-T1-E1

Wahanga Tapeke: 114810

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 1.5A, 4.5V,

Momotae
SI7812DN-T1-GE3
Vishay Siliconix

SI7812DN-T1-GE3

Wahanga Tapeke: 73609

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V,

Momotae
SI7463DP-T1-E3
Vishay Siliconix

SI7463DP-T1-E3

Wahanga Tapeke: 62425

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V,

Momotae
SQ7415AENW-T1_GE3
Vishay Siliconix

SQ7415AENW-T1_GE3

Wahanga Tapeke: 9941

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V,

Momotae
SI7655DN-T1-GE3
Vishay Siliconix

SI7655DN-T1-GE3

Wahanga Tapeke: 93051

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V,

Momotae
SI2319DDS-T1-GE3
Vishay Siliconix

SI2319DDS-T1-GE3

Wahanga Tapeke: 9907

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Ta), 3.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 2.7A, 10V,

Momotae
SUP90N06-5M0P-E3
Vishay Siliconix

SUP90N06-5M0P-E3

Wahanga Tapeke: 1405

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

Momotae
SIHU2N80E-GE3
Vishay Siliconix

SIHU2N80E-GE3

Wahanga Tapeke: 10077

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.75 Ohm @ 1A, 10V,

Momotae
IRFR9010TRLPBF
Vishay Siliconix

IRFR9010TRLPBF

Wahanga Tapeke: 108086

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V,

Momotae
IRFS11N50APBF
Vishay Siliconix

IRFS11N50APBF

Wahanga Tapeke: 23664

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V,

Momotae
SIHP25N40D-GE3
Vishay Siliconix

SIHP25N40D-GE3

Wahanga Tapeke: 21622

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V,

Momotae
SI5441BDC-T1-GE3
Vishay Siliconix

SI5441BDC-T1-GE3

Wahanga Tapeke: 139892

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V,

Momotae
SI3437DV-T1-GE3
Vishay Siliconix

SI3437DV-T1-GE3

Wahanga Tapeke: 195411

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V,

Momotae
SQ3481EV-T1_GE3
Vishay Siliconix

SQ3481EV-T1_GE3

Wahanga Tapeke: 9951

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 5.3A, 10V,

Momotae
SIR460DP-T1-GE3
Vishay Siliconix

SIR460DP-T1-GE3

Wahanga Tapeke: 139904

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 15A, 10V,

Momotae
SIR172ADP-T1-GE3
Vishay Siliconix

SIR172ADP-T1-GE3

Wahanga Tapeke: 167026

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

Momotae
SUD45P03-10-E3
Vishay Siliconix

SUD45P03-10-E3

Wahanga Tapeke: 1457

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V,

Momotae
SIHD6N80E-GE3
Vishay Siliconix

SIHD6N80E-GE3

Wahanga Tapeke: 12856

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 940 mOhm @ 3A, 10V,

Momotae
SQJ433EP-T1_GE3
Vishay Siliconix

SQJ433EP-T1_GE3

Wahanga Tapeke: 9965

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.1 mOhm @ 16A, 10V,

Momotae
SIR662DP-T1-GE3
Vishay Siliconix

SIR662DP-T1-GE3

Wahanga Tapeke: 76185

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V,

Momotae
SI3469DV-T1-GE3
Vishay Siliconix

SI3469DV-T1-GE3

Wahanga Tapeke: 153423

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V,

Momotae
SQJA80EP-T1_GE3
Vishay Siliconix

SQJA80EP-T1_GE3

Wahanga Tapeke: 136685

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V,

Momotae
SIJ438DP-T1-GE3
Vishay Siliconix

SIJ438DP-T1-GE3

Wahanga Tapeke: 95214

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.35 mOhm @ 20A, 10V,

Momotae
SQJ463EP-T1_GE3
Vishay Siliconix

SQJ463EP-T1_GE3

Wahanga Tapeke: 47733

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 18A, 10V,

Momotae
SI7114ADN-T1-GE3
Vishay Siliconix

SI7114ADN-T1-GE3

Wahanga Tapeke: 191391

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 18A, 10V,

Momotae