Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

Vishay Siliconix

IRFI540GPBF

Wahanga Tapeke: 25306

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V,

Momotae

SI8805EDB-T2-E1

Vishay Siliconix

SI8805EDB-T2-E1

Wahanga Tapeke: 116920

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V,

Momotae

SI1414DH-T1-GE3

Vishay Siliconix

SI1414DH-T1-GE3

Wahanga Tapeke: 105432

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V,

Momotae

Vishay Siliconix

IRLU110PBF

Wahanga Tapeke: 44175

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V,

Momotae

SQJQ480E-T1_GE3

Vishay Siliconix

SQJQ480E-T1_GE3

Wahanga Tapeke: 54836

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V,

Momotae

SUP50N10-21P-GE3

Vishay Siliconix

SUP50N10-21P-GE3

Wahanga Tapeke: 40477

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V,

Momotae

SQD07N25-350H_GE3

Vishay Siliconix

SQD07N25-350H_GE3

Wahanga Tapeke: 8682

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V,

Momotae

Vishay Siliconix

IRFR214TRPBF

Wahanga Tapeke: 113516

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 1.3A, 10V,

Momotae

Vishay Siliconix

IRFU9014PBF

Wahanga Tapeke: 49898

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V,

Momotae

Vishay Siliconix

VQ1004P

Wahanga Tapeke: 1763

Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V,

Momotae

SQD23N06-31L_GE3

Vishay Siliconix

SQD23N06-31L_GE3

Wahanga Tapeke: 97850

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

IRFU110PBF

Wahanga Tapeke: 75528

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V,

Momotae

Vishay Siliconix

IRF644PBF

Wahanga Tapeke: 48209

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V,

Momotae

SIR644DP-T1-GE3

Vishay Siliconix

SIR644DP-T1-GE3

Wahanga Tapeke: 121512

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

IRF9640PBF

Wahanga Tapeke: 40692

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V,

Momotae

SI1315DL-T1-GE3

Vishay Siliconix

SI1315DL-T1-GE3

Wahanga Tapeke: 176998

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 900mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V,

Momotae

Vishay Siliconix

IRFR9014TRPBF

Wahanga Tapeke: 149247

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V,

Momotae

SUP53P06-20-GE3

Vishay Siliconix

SUP53P06-20-GE3

Wahanga Tapeke: 1777

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Ta), 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V,

Momotae

Vishay Siliconix

VP0808B-2

Wahanga Tapeke: 1858

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 880mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

IRFD9123

Wahanga Tapeke: 1797

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A (Ta), Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V,

Momotae

Vishay Siliconix

IRFR430ATRPBF

Wahanga Tapeke: 80238

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V,

Momotae

Vishay Siliconix

VP0808B-E3

Wahanga Tapeke: 1809

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 880mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V,

Momotae

SQD30N05-20L_GE3

Vishay Siliconix

SQD30N05-20L_GE3

Wahanga Tapeke: 110170

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V,

Momotae

SQD97N06-6M3L_GE3

Vishay Siliconix

SQD97N06-6M3L_GE3

Wahanga Tapeke: 97635

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 97A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V,

Momotae

Vishay Siliconix

IRFR9020TRPBF

Wahanga Tapeke: 105921

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V,

Momotae

Vishay Siliconix

IRFR9120PBF

Wahanga Tapeke: 66670

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V,

Momotae

SUD42N03-3M9P-GE3

Vishay Siliconix

SUD42N03-3M9P-GE3

Wahanga Tapeke: 1783

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V,

Momotae

Vishay Siliconix

IRFP26N60L

Wahanga Tapeke: 1825

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 16A, 10V,

Momotae

SIJH440E-T1-GE3

Vishay Siliconix

SIJH440E-T1-GE3

Wahanga Tapeke: 57409

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.96 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

IRLIZ34GPBF

Wahanga Tapeke: 25084

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 12A, 5V,

Momotae

Vishay Siliconix

IRF9510SPBF

Wahanga Tapeke: 32554

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V,

Momotae

SIR482DP-T1-GE3

Vishay Siliconix

SIR482DP-T1-GE3

Wahanga Tapeke: 1852

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V,

Momotae

Vishay Siliconix

IRLZ24PBF

Wahanga Tapeke: 54654

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V,

Momotae

Vishay Siliconix

IRFR9024TRPBF

Wahanga Tapeke: 180875

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V,

Momotae

SI4038DY-T1-GE3

Vishay Siliconix

SI4038DY-T1-GE3

Wahanga Tapeke: 1778

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

VP0808B

Wahanga Tapeke: 1769

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 880mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V,

Momotae

3600

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