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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SIA448DJ-T1-GE3
Vishay Siliconix

SIA448DJ-T1-GE3

Wahanga Tapeke: 169988

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V,

Momotae
SI4404DY-T1-E3
Vishay Siliconix

SI4404DY-T1-E3

Wahanga Tapeke: 1527

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 23A, 10V,

Momotae
SI4434DY-T1-GE3
Vishay Siliconix

SI4434DY-T1-GE3

Wahanga Tapeke: 68716

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 3A, 10V,

Momotae
IRFI624GPBF
Vishay Siliconix

IRFI624GPBF

Wahanga Tapeke: 1532

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V,

Momotae
SIE832DF-T1-GE3
Vishay Siliconix

SIE832DF-T1-GE3

Wahanga Tapeke: 43943

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V,

Momotae
IRLZ14S
Vishay Siliconix

IRLZ14S

Wahanga Tapeke: 1538

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V,

Momotae
SI4386DY-T1-GE3
Vishay Siliconix

SI4386DY-T1-GE3

Wahanga Tapeke: 159083

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V,

Momotae
IRFR210PBF
Vishay Siliconix

IRFR210PBF

Wahanga Tapeke: 69131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V,

Momotae
SQ4182EY-T1_GE3
Vishay Siliconix

SQ4182EY-T1_GE3

Wahanga Tapeke: 10824

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 14A, 10V,

Momotae
SI4455DY-T1-E3
Vishay Siliconix

SI4455DY-T1-E3

Wahanga Tapeke: 73600

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 295 mOhm @ 4A, 10V,

Momotae
SI4412ADY-T1-E3
Vishay Siliconix

SI4412ADY-T1-E3

Wahanga Tapeke: 1496

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V,

Momotae
SI4426DY-T1-E3
Vishay Siliconix

SI4426DY-T1-E3

Wahanga Tapeke: 108121

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 8.5A, 4.5V,

Momotae
SUP75N03-04-E3
Vishay Siliconix

SUP75N03-04-E3

Wahanga Tapeke: 1524

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V,

Momotae
SUD35N05-26L-E3
Vishay Siliconix

SUD35N05-26L-E3

Wahanga Tapeke: 1474

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V,

Momotae
SI4425BDY-T1-GE3
Vishay Siliconix

SI4425BDY-T1-GE3

Wahanga Tapeke: 78344

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V,

Momotae
IRF9530PBF
Vishay Siliconix

IRF9530PBF

Wahanga Tapeke: 45568

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V,

Momotae
SI4800BDY-T1-E3
Vishay Siliconix

SI4800BDY-T1-E3

Wahanga Tapeke: 126818

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V,

Momotae
SI4464DY-T1-E3
Vishay Siliconix

SI4464DY-T1-E3

Wahanga Tapeke: 159052

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 2.2A, 10V,

Momotae
SI4100DY-T1-GE3
Vishay Siliconix

SI4100DY-T1-GE3

Wahanga Tapeke: 125140

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 63 mOhm @ 4.4A, 10V,

Momotae
SUD23N06-31L-E3
Vishay Siliconix

SUD23N06-31L-E3

Wahanga Tapeke: 118954

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V,

Momotae
SI4010DY-T1-GE3
Vishay Siliconix

SI4010DY-T1-GE3

Wahanga Tapeke: 167778

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 15A, 10V,

Momotae
IRL520PBF
Vishay Siliconix

IRL520PBF

Wahanga Tapeke: 63689

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V,

Momotae
SI4831BDY-T1-E3
Vishay Siliconix

SI4831BDY-T1-E3

Wahanga Tapeke: 1596

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V,

Momotae
SI9433BDY-T1-GE3
Vishay Siliconix

SI9433BDY-T1-GE3

Wahanga Tapeke: 100195

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.7V, 4.5V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V,

Momotae
SQ4425EY-T1_GE3
Vishay Siliconix

SQ4425EY-T1_GE3

Wahanga Tapeke: 10789

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 13A, 10V,

Momotae
SQ4483EY-T1_GE3
Vishay Siliconix

SQ4483EY-T1_GE3

Wahanga Tapeke: 10770

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

Momotae
SI4103DY-T1-GE3
Vishay Siliconix

SI4103DY-T1-GE3

Wahanga Tapeke: 10820

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.9 mOhm @ 10A, 10V,

Momotae
SQ4483BEEY-T1_GE3
Vishay Siliconix

SQ4483BEEY-T1_GE3

Wahanga Tapeke: 10837

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

Momotae
IRFDC20PBF
Vishay Siliconix

IRFDC20PBF

Wahanga Tapeke: 29452

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 320mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V,

Momotae
SIHH28N60E-T1-GE3
Vishay Siliconix

SIHH28N60E-T1-GE3

Wahanga Tapeke: 10451

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 29A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 14A, 10V,

Momotae
SI4888DY-T1-E3
Vishay Siliconix

SI4888DY-T1-E3

Wahanga Tapeke: 1502

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V,

Momotae
SI7790DP-T1-GE3
Vishay Siliconix

SI7790DP-T1-GE3

Wahanga Tapeke: 49817

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V,

Momotae
SI4884BDY-T1-E3
Vishay Siliconix

SI4884BDY-T1-E3

Wahanga Tapeke: 128225

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V,

Momotae
IRFP460NPBF
Vishay Siliconix

IRFP460NPBF

Wahanga Tapeke: 1584

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 12A, 10V,

Momotae
SUD50N06-07L-E3
Vishay Siliconix

SUD50N06-07L-E3

Wahanga Tapeke: 1499

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 96A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.4 mOhm @ 20A, 10V,

Momotae
SI4143DY-T1-GE3
Vishay Siliconix

SI4143DY-T1-GE3

Wahanga Tapeke: 81402

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 12A, 10V,

Momotae