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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SI1428EDH-T1-GE3
Vishay Siliconix

SI1428EDH-T1-GE3

Wahanga Tapeke: 2301

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V,

Momotae
SIS778DN-T1-GE3
Vishay Siliconix

SIS778DN-T1-GE3

Wahanga Tapeke: 2237

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 10A, 10V,

Momotae
SUM25P10-138-E3
Vishay Siliconix

SUM25P10-138-E3

Wahanga Tapeke: 2130

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V,

Momotae
IRFP360PBF
Vishay Siliconix

IRFP360PBF

Wahanga Tapeke: 17668

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V,

Momotae
IRFIBC30GPBF
Vishay Siliconix

IRFIBC30GPBF

Wahanga Tapeke: 22948

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V,

Momotae
SIHF30N60E-GE3
Vishay Siliconix

SIHF30N60E-GE3

Wahanga Tapeke: 21645

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 29A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V,

Momotae
SI5499DC-T1-GE3
Vishay Siliconix

SI5499DC-T1-GE3

Wahanga Tapeke: 2090

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V,

Momotae
IRFD9110PBF
Vishay Siliconix

IRFD9110PBF

Wahanga Tapeke: 77098

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 700mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 420mA, 10V,

Momotae
SIS626DN-T1-GE3
Vishay Siliconix

SIS626DN-T1-GE3

Wahanga Tapeke: 2276

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V,

Momotae
SIR494DP-T1-GE3
Vishay Siliconix

SIR494DP-T1-GE3

Wahanga Tapeke: 75925

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V,

Momotae
SIR798DP-T1-GE3
Vishay Siliconix

SIR798DP-T1-GE3

Wahanga Tapeke: 6311

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.05 Ohm @ 20A, 10V,

Momotae
IRF9640STRRPBF
Vishay Siliconix

IRF9640STRRPBF

Wahanga Tapeke: 35879

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V,

Momotae
SUD45P04-16P-GE3
Vishay Siliconix

SUD45P04-16P-GE3

Wahanga Tapeke: 2119

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16.2 mOhm @ 14A, 20V,

Momotae
SI4410BDY-T1-GE3
Vishay Siliconix

SI4410BDY-T1-GE3

Wahanga Tapeke: 148655

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V,

Momotae
IRF830APBF
Vishay Siliconix

IRF830APBF

Wahanga Tapeke: 53105

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V,

Momotae
SI4620DY-T1-GE3
Vishay Siliconix

SI4620DY-T1-GE3

Wahanga Tapeke: 150899

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), 7.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V,

Momotae
SI7102DN-T1-GE3
Vishay Siliconix

SI7102DN-T1-GE3

Wahanga Tapeke: 80934

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 4.5V,

Momotae
SI1002R-T1-GE3
Vishay Siliconix

SI1002R-T1-GE3

Wahanga Tapeke: 5671

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 610mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 560 mOhm @ 500mA, 4.5V,

Momotae
SIB404DK-T1-GE3
Vishay Siliconix

SIB404DK-T1-GE3

Wahanga Tapeke: 121441

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 3A, 4.5V,

Momotae
SI4396DY-T1-GE3
Vishay Siliconix

SI4396DY-T1-GE3

Wahanga Tapeke: 6234

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V,

Momotae
IRLZ44SPBF
Vishay Siliconix

IRLZ44SPBF

Wahanga Tapeke: 21719

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V,

Momotae
SUM90N04-3M3P-E3
Vishay Siliconix

SUM90N04-3M3P-E3

Wahanga Tapeke: 66360

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 22A, 10V,

Momotae
SQD45P03-12_GE3
Vishay Siliconix

SQD45P03-12_GE3

Wahanga Tapeke: 40076

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V,

Momotae
SIB437EDKT-T1-GE3
Vishay Siliconix

SIB437EDKT-T1-GE3

Wahanga Tapeke: 139558

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V,

Momotae
SI7794DP-T1-GE3
Vishay Siliconix

SI7794DP-T1-GE3

Wahanga Tapeke: 2382

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28.6A (Ta), 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V,

Momotae
SQM120P06-07L_GE3
Vishay Siliconix

SQM120P06-07L_GE3

Wahanga Tapeke: 41168

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V,

Momotae
SIR774DP-T1-GE3
Vishay Siliconix

SIR774DP-T1-GE3

Wahanga Tapeke: 2137

Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V,

Momotae
SIR472DP-T1-GE3
Vishay Siliconix

SIR472DP-T1-GE3

Wahanga Tapeke: 197213

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V,

Momotae
SI7405BDN-T1-GE3
Vishay Siliconix

SI7405BDN-T1-GE3

Wahanga Tapeke: 132127

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V,

Momotae
SI4636DY-T1-GE3
Vishay Siliconix

SI4636DY-T1-GE3

Wahanga Tapeke: 2164

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

Momotae
SI4712DY-T1-GE3
Vishay Siliconix

SI4712DY-T1-GE3

Wahanga Tapeke: 188239

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Momotae
SUP25P10-138-GE3
Vishay Siliconix

SUP25P10-138-GE3

Wahanga Tapeke: 2159

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V,

Momotae
SUM120N04-1M7L-GE3
Vishay Siliconix

SUM120N04-1M7L-GE3

Wahanga Tapeke: 2166

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 30A, 10V,

Momotae
SIR866DP-T1-GE3
Vishay Siliconix

SIR866DP-T1-GE3

Wahanga Tapeke: 57436

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.9 mOhm @ 20A, 10V,

Momotae
IRF740ASPBF
Vishay Siliconix

IRF740ASPBF

Wahanga Tapeke: 34632

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V,

Momotae
IRFI720GPBF
Vishay Siliconix

IRFI720GPBF

Wahanga Tapeke: 26997

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 1.6A, 10V,

Momotae