Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Kotahi

  • Kāinga
  •  
  • Transistors - FETs, MOSFETs - Kotahi
IRF7749L2TR1PBF
Infineon Technologies

IRF7749L2TR1PBF

Wahanga Tapeke: 906

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Ta), 375A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V,

Momotae
IRFHS8342TR2PBF
Infineon Technologies

IRFHS8342TR2PBF

Wahanga Tapeke: 1060

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.8A (Ta), 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V,

Momotae
IPP90N06S404AKSA1
Infineon Technologies

IPP90N06S404AKSA1

Wahanga Tapeke: 945

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V,

Momotae
IRF3707ZCSTRRP
Infineon Technologies

IRF3707ZCSTRRP

Wahanga Tapeke: 975

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V,

Momotae
IRF6616TR1PBF
Infineon Technologies

IRF6616TR1PBF

Wahanga Tapeke: 1006

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Ta), 106A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V,

Momotae
IPD60R2K0C6BTMA1
Infineon Technologies

IPD60R2K0C6BTMA1

Wahanga Tapeke: 1029

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V,

Momotae
IPB120N06S403ATMA1
Infineon Technologies

IPB120N06S403ATMA1

Wahanga Tapeke: 944

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V,

Momotae
IPI45N06S409AKSA1
Infineon Technologies

IPI45N06S409AKSA1

Wahanga Tapeke: 927

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.4 mOhm @ 45A, 10V,

Momotae
IPW65R048CFDAFKSA1
Infineon Technologies

IPW65R048CFDAFKSA1

Wahanga Tapeke: 4425

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 63.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 29.4A, 10V,

Momotae
IPI120N06S402AKSA1
Infineon Technologies

IPI120N06S402AKSA1

Wahanga Tapeke: 48204

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V,

Momotae
IRF7220GTRPBF
Infineon Technologies

IRF7220GTRPBF

Wahanga Tapeke: 971

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 14V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V,

Momotae
IRLU8259PBF
Infineon Technologies

IRLU8259PBF

Wahanga Tapeke: 971

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 57A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.7 mOhm @ 21A, 10V,

Momotae
IRFH5303TRPBF
Infineon Technologies

IRFH5303TRPBF

Wahanga Tapeke: 6156

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), 82A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 49A, 10V,

Momotae
IRFR1018ETRRPBF
Infineon Technologies

IRFR1018ETRRPBF

Wahanga Tapeke: 915

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V,

Momotae
IRF7811WGTRPBF
Infineon Technologies

IRF7811WGTRPBF

Wahanga Tapeke: 980

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V,

Momotae
IRFHM9331TR2PBF
Infineon Technologies

IRFHM9331TR2PBF

Wahanga Tapeke: 927

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, 20V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 11A, 20V,

Momotae
IPD60R380C6
Infineon Technologies

IPD60R380C6

Wahanga Tapeke: 927

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V,

Momotae
IRFHM830DTRPBF
Infineon Technologies

IRFHM830DTRPBF

Wahanga Tapeke: 1013

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V,

Momotae
IRF9310PBF
Infineon Technologies

IRF9310PBF

Wahanga Tapeke: 39394

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V,

Momotae
IRFH5004TR2PBF
Infineon Technologies

IRFH5004TR2PBF

Wahanga Tapeke: 6131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V,

Momotae
IRFH5215TR2PBF
Infineon Technologies

IRFH5215TR2PBF

Wahanga Tapeke: 1150

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 16A, 10V,

Momotae
IRF7759L2TR1PBF
Infineon Technologies

IRF7759L2TR1PBF

Wahanga Tapeke: 883

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Ta), 375A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V,

Momotae
IRF6728MTRPBF
Infineon Technologies

IRF6728MTRPBF

Wahanga Tapeke: 1011

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), 140A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V,

Momotae
IPP45N06S4L08AKSA1
Infineon Technologies

IPP45N06S4L08AKSA1

Wahanga Tapeke: 936

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 45A, 10V,

Momotae
IRF6614TR1
Infineon Technologies

IRF6614TR1

Wahanga Tapeke: 988

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.7A (Ta), 55A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V,

Momotae
IRF1405ZL-7PPBF
Infineon Technologies

IRF1405ZL-7PPBF

Wahanga Tapeke: 978

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V,

Momotae
IRFP3415PBF
Infineon Technologies

IRFP3415PBF

Wahanga Tapeke: 22736

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V,

Momotae
IPD90N06S4L03ATMA1
Infineon Technologies

IPD90N06S4L03ATMA1

Wahanga Tapeke: 944

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V,

Momotae
IPP90N06S4L04AKSA1
Infineon Technologies

IPP90N06S4L04AKSA1

Wahanga Tapeke: 885

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V,

Momotae
IRFSL4229PBF
Infineon Technologies

IRFSL4229PBF

Wahanga Tapeke: 917

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V,

Momotae
IRFB3607GPBF
Infineon Technologies

IRFB3607GPBF

Wahanga Tapeke: 1058

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V,

Momotae
IRF7700TRPBF
Infineon Technologies

IRF7700TRPBF

Wahanga Tapeke: 1004

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V,

Momotae
IPA60R520E6XKSA1
Infineon Technologies

IPA60R520E6XKSA1

Wahanga Tapeke: 6182

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V,

Momotae
SPD30N03S2L07GBTMA1
Infineon Technologies

SPD30N03S2L07GBTMA1

Wahanga Tapeke: 977

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V,

Momotae
IRL8113STRLPBF
Infineon Technologies

IRL8113STRLPBF

Wahanga Tapeke: 958

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 105A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V,

Momotae
IPB180N06S4H1ATMA1
Infineon Technologies

IPB180N06S4H1ATMA1

Wahanga Tapeke: 965

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V,

Momotae