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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
IPW65R280C6FKSA1
Infineon Technologies

IPW65R280C6FKSA1

Wahanga Tapeke: 30026

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V,

Momotae
IPP65R660CFDXKSA1
Infineon Technologies

IPP65R660CFDXKSA1

Wahanga Tapeke: 71639

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V,

Momotae
SN7002NH6327XTSA1
Infineon Technologies

SN7002NH6327XTSA1

Wahanga Tapeke: 1468

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Momotae
IPD122N10N3GBTMA1
Infineon Technologies

IPD122N10N3GBTMA1

Wahanga Tapeke: 1414

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 12.2 mOhm @ 46A, 10V,

Momotae
IPB65R600C6ATMA1
Infineon Technologies

IPB65R600C6ATMA1

Wahanga Tapeke: 96627

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V,

Momotae
IPL60R210P6AUMA1
Infineon Technologies

IPL60R210P6AUMA1

Wahanga Tapeke: 57470

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 7.6A, 10V,

Momotae
IPB039N04LGATMA1
Infineon Technologies

IPB039N04LGATMA1

Wahanga Tapeke: 1437

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V,

Momotae
IPN50R1K4CEATMA1
Infineon Technologies

IPN50R1K4CEATMA1

Wahanga Tapeke: 181536

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 13V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V,

Momotae
IPW65R190C6FKSA1
Infineon Technologies

IPW65R190C6FKSA1

Wahanga Tapeke: 24551

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V,

Momotae
IPP90N04S402AKSA1
Infineon Technologies

IPP90N04S402AKSA1

Wahanga Tapeke: 1192

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 90A, 10V,

Momotae
IPW65R310CFDFKSA1
Infineon Technologies

IPW65R310CFDFKSA1

Wahanga Tapeke: 32469

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V,

Momotae
IPN50R3K0CEATMA1
Infineon Technologies

IPN50R3K0CEATMA1

Wahanga Tapeke: 109700

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 13V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V,

Momotae
IRFH7107TR2PBF
Infineon Technologies

IRFH7107TR2PBF

Wahanga Tapeke: 1447

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 45A, 10V,

Momotae
IPN70R600P7SATMA1
Infineon Technologies

IPN70R600P7SATMA1

Wahanga Tapeke: 130801

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V,

Momotae
IRFR4620TRLPBF
Infineon Technologies

IRFR4620TRLPBF

Wahanga Tapeke: 102980

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V,

Momotae
IPD530N15N3GBTMA1
Infineon Technologies

IPD530N15N3GBTMA1

Wahanga Tapeke: 1479

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V,

Momotae
IRLML6244TRPBF
Infineon Technologies

IRLML6244TRPBF

Wahanga Tapeke: 104946

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 6.3A, 4.5V,

Momotae
IPB072N15N3GE8187ATMA1
Infineon Technologies

IPB072N15N3GE8187ATMA1

Wahanga Tapeke: 1460

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 100A, 10V,

Momotae
IPB65R660CFDATMA1
Infineon Technologies

IPB65R660CFDATMA1

Wahanga Tapeke: 6165

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V,

Momotae
IPN80R750P7ATMA1
Infineon Technologies

IPN80R750P7ATMA1

Wahanga Tapeke: 9916

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V,

Momotae
IPD038N04NGBTMA1
Infineon Technologies

IPD038N04NGBTMA1

Wahanga Tapeke: 1444

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V,

Momotae
IPB230N06L3GATMA1
Infineon Technologies

IPB230N06L3GATMA1

Wahanga Tapeke: 1420

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V,

Momotae
IRL2910PBF
Infineon Technologies

IRL2910PBF

Wahanga Tapeke: 30729

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V,

Momotae
IPI65R600C6XKSA1
Infineon Technologies

IPI65R600C6XKSA1

Wahanga Tapeke: 76220

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V,

Momotae
IPN70R2K0P7SATMA1
Infineon Technologies

IPN70R2K0P7SATMA1

Wahanga Tapeke: 9932

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

Momotae
IPP120N04S402AKSA1
Infineon Technologies

IPP120N04S402AKSA1

Wahanga Tapeke: 1208

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V,

Momotae
IPP65R280C6XKSA1
Infineon Technologies

IPP65R280C6XKSA1

Wahanga Tapeke: 48437

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V,

Momotae
IPI65R110CFDXKSA1
Infineon Technologies

IPI65R110CFDXKSA1

Wahanga Tapeke: 19795

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V,

Momotae
IPL60R085P7AUMA1
Infineon Technologies

IPL60R085P7AUMA1

Wahanga Tapeke: 9982

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 11.8A, 10V,

Momotae
IPN80R2K4P7ATMA1
Infineon Technologies

IPN80R2K4P7ATMA1

Wahanga Tapeke: 9955

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.4 Ohm @ 800mA, 10V,

Momotae
IPB60R950C6ATMA1
Infineon Technologies

IPB60R950C6ATMA1

Wahanga Tapeke: 1419

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V,

Momotae
IPB009N03LGATMA1
Infineon Technologies

IPB009N03LGATMA1

Wahanga Tapeke: 9903

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.95 mOhm @ 100A, 10V,

Momotae
IPD90R1K2C3BTMA1
Infineon Technologies

IPD90R1K2C3BTMA1

Wahanga Tapeke: 1460

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V,

Momotae
IRFI4410ZGPBF
Infineon Technologies

IRFI4410ZGPBF

Wahanga Tapeke: 1390

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 26A, 10V,

Momotae
IPB65R380C6ATMA1
Infineon Technologies

IPB65R380C6ATMA1

Wahanga Tapeke: 70807

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V,

Momotae
IPD65R380E6BTMA1
Infineon Technologies

IPD65R380E6BTMA1

Wahanga Tapeke: 93019

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V,

Momotae