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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
IRL6342PBF
Infineon Technologies

IRL6342PBF

Wahanga Tapeke: 6116

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 14.6 mOhm @ 9.9A, 4.5V,

Momotae
IRFS4228TRLPBF
Infineon Technologies

IRFS4228TRLPBF

Wahanga Tapeke: 939

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 83A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V,

Momotae
IRLHM620TR2PBF
Infineon Technologies

IRLHM620TR2PBF

Wahanga Tapeke: 1044

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 4.5V,

Momotae
IRF8113GTRPBF
Infineon Technologies

IRF8113GTRPBF

Wahanga Tapeke: 963

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V,

Momotae
IRFH5306TRPBF
Infineon Technologies

IRFH5306TRPBF

Wahanga Tapeke: 897

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V,

Momotae
IPD70N04S3-07
Infineon Technologies

IPD70N04S3-07

Wahanga Tapeke: 879

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 82A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 70A, 10V,

Momotae
IPB120N06S4H1ATMA1
Infineon Technologies

IPB120N06S4H1ATMA1

Wahanga Tapeke: 883

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V,

Momotae
IPP065N04N G
Infineon Technologies

IPP065N04N G

Wahanga Tapeke: 913

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V,

Momotae
IPP60R600C6XKSA1
Infineon Technologies

IPP60R600C6XKSA1

Wahanga Tapeke: 877

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V,

Momotae
IPI90N06S404AKSA1
Infineon Technologies

IPI90N06S404AKSA1

Wahanga Tapeke: 75330

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V,

Momotae
IRF3703PBF
Infineon Technologies

IRF3703PBF

Wahanga Tapeke: 23090

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 210A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7V, 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 76A, 10V,

Momotae
IRFB3307PBF
Infineon Technologies

IRFB3307PBF

Wahanga Tapeke: 29807

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 130A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V,

Momotae
IRF7459TRPBF
Infineon Technologies

IRF7459TRPBF

Wahanga Tapeke: 1014

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V,

Momotae
IPI80P03P4L04AKSA1
Infineon Technologies

IPI80P03P4L04AKSA1

Wahanga Tapeke: 59340

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V,

Momotae
IPB80N06S4L07ATMA1
Infineon Technologies

IPB80N06S4L07ATMA1

Wahanga Tapeke: 962

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.4 mOhm @ 80A, 10V,

Momotae
IPP60R750E6XKSA1
Infineon Technologies

IPP60R750E6XKSA1

Wahanga Tapeke: 93037

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V,

Momotae
IPP60R520E6XKSA1
Infineon Technologies

IPP60R520E6XKSA1

Wahanga Tapeke: 71686

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V,

Momotae
IPP80N06S407AKSA1
Infineon Technologies

IPP80N06S407AKSA1

Wahanga Tapeke: 907

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V,

Momotae
IRFH5220TR2PBF
Infineon Technologies

IRFH5220TR2PBF

Wahanga Tapeke: 1076

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A (Ta), 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 99.9 mOhm @ 5.8A, 10V,

Momotae
IPD320N20N3GBTMA1
Infineon Technologies

IPD320N20N3GBTMA1

Wahanga Tapeke: 888

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V,

Momotae
IPP80N04S3H4AKSA1
Infineon Technologies

IPP80N04S3H4AKSA1

Wahanga Tapeke: 77103

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V,

Momotae
IRFH5015TR2PBF
Infineon Technologies

IRFH5015TR2PBF

Wahanga Tapeke: 874

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 34A, 10V,

Momotae
IPD30N06S4L23ATMA1
Infineon Technologies

IPD30N06S4L23ATMA1

Wahanga Tapeke: 875

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V,

Momotae
IRF6665TR1
Infineon Technologies

IRF6665TR1

Wahanga Tapeke: 982

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A (Ta), 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V,

Momotae
IPD50N06S409ATMA1
Infineon Technologies

IPD50N06S409ATMA1

Wahanga Tapeke: 935

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V,

Momotae
IRLH5034TR2PBF
Infineon Technologies

IRLH5034TR2PBF

Wahanga Tapeke: 981

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 29A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V,

Momotae
IRF7807ATRPBF
Infineon Technologies

IRF7807ATRPBF

Wahanga Tapeke: 1023

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V,

Momotae
IRF7494TRPBF
Infineon Technologies

IRF7494TRPBF

Wahanga Tapeke: 1020

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V,

Momotae
IRFH5255TRPBF
Infineon Technologies

IRFH5255TRPBF

Wahanga Tapeke: 915

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V,

Momotae
IRF1404ZPBF
Infineon Technologies

IRF1404ZPBF

Wahanga Tapeke: 35746

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V,

Momotae
IPI120N06S403AKSA1
Infineon Technologies

IPI120N06S403AKSA1

Wahanga Tapeke: 967

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V,

Momotae
IPB60R600CPATMA1
Infineon Technologies

IPB60R600CPATMA1

Wahanga Tapeke: 906

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V,

Momotae
IRFH5255TR2PBF
Infineon Technologies

IRFH5255TR2PBF

Wahanga Tapeke: 929

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V,

Momotae
IRFH5206TR2PBF
Infineon Technologies

IRFH5206TR2PBF

Wahanga Tapeke: 954

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Ta), 89A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 50A, 10V,

Momotae
IRF7406GTRPBF
Infineon Technologies

IRF7406GTRPBF

Wahanga Tapeke: 954

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V,

Momotae
IRL1004STRLPBF
Infineon Technologies

IRL1004STRLPBF

Wahanga Tapeke: 6163

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 130A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V,

Momotae