Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

Infineon Technologies

IRFH5250TR2PBF

Wahanga Tapeke: 855

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.15 mOhm @ 50A, 10V,

Momotae

IPB80N06S4L05ATMA1

Infineon Technologies

IPB80N06S4L05ATMA1

Wahanga Tapeke: 932

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V,

Momotae

IRF7769L2TR1PBF

Infineon Technologies

IRF7769L2TR1PBF

Wahanga Tapeke: 928

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 375A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V,

Momotae

Infineon Technologies

IRFR3410TRRPBF

Wahanga Tapeke: 923

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V,

Momotae

Infineon Technologies

IRLU2905ZPBF

Wahanga Tapeke: 44991

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V,

Momotae

Infineon Technologies

SI3443DVTRPBF

Wahanga Tapeke: 994

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V,

Momotae

IPB034N06N3GATMA1

Infineon Technologies

IPB034N06N3GATMA1

Wahanga Tapeke: 952

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V,

Momotae

Infineon Technologies

IRF9321PBF

Wahanga Tapeke: 6152

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IRF9393PBF

Wahanga Tapeke: 6188

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, 20V, Rds Kei (Max) @ Id, Vgs: 13.3 mOhm @ 9.2A, 20V,

Momotae

Infineon Technologies

IRF7475TRPBF

Wahanga Tapeke: 1012

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 8.8A, 4.5V,

Momotae

Infineon Technologies

IRF5210PBF

Wahanga Tapeke: 33215

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V,

Momotae

Infineon Technologies

IRFH5106TR2PBF

Wahanga Tapeke: 966

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V,

Momotae

Infineon Technologies

IRF6708S2TRPBF

Wahanga Tapeke: 995

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.9 mOhm @ 13A, 10V,

Momotae

IPA90R340C3XKSA1

Infineon Technologies

IPA90R340C3XKSA1

Wahanga Tapeke: 11571

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V,

Momotae

Infineon Technologies

IRFH6200TR2PBF

Wahanga Tapeke: 933

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.95 mOhm @ 50A, 10V,

Momotae

IRFHM830DTR2PBF

Infineon Technologies

IRFHM830DTR2PBF

Wahanga Tapeke: 984

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V,

Momotae

Infineon Technologies

IRFP4110PBF

Wahanga Tapeke: 16957

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V,

Momotae

Infineon Technologies

IRF7815PBF

Wahanga Tapeke: 906

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 3.1A, 10V,

Momotae

Infineon Technologies

IRFH5204TRPBF

Wahanga Tapeke: 1051

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V,

Momotae

SPW20N60C3FKSA1

Infineon Technologies

SPW20N60C3FKSA1

Wahanga Tapeke: 12209

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V,

Momotae

Infineon Technologies

IRF7707TRPBF

Wahanga Tapeke: 1001

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V,

Momotae

Infineon Technologies

IRF7705TRPBF

Wahanga Tapeke: 6096

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V,

Momotae

Infineon Technologies

IRF9392PBF

Wahanga Tapeke: 6197

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, 20V, Rds Kei (Max) @ Id, Vgs: 12.1 mOhm @ 7.8A, 20V,

Momotae

Infineon Technologies

IRF6201PBF

Wahanga Tapeke: 967

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 2.45 mOhm @ 27A, 4.5V,

Momotae

Infineon Technologies

IRFH5007TR2PBF

Wahanga Tapeke: 924

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.9 mOhm @ 50A, 10V,

Momotae

Infineon Technologies

IRF6713STRPBF

Wahanga Tapeke: 987

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 22A, 10V,

Momotae

Infineon Technologies

IPD60R3K3C6

Wahanga Tapeke: 1044

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V,

Momotae

IPP60R450E6XKSA1

Infineon Technologies

IPP60R450E6XKSA1

Wahanga Tapeke: 1048

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V,

Momotae

Infineon Technologies

IRFR3505TRPBF

Wahanga Tapeke: 953

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V,

Momotae

IPB021N06N3GATMA1

Infineon Technologies

IPB021N06N3GATMA1

Wahanga Tapeke: 944

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V,

Momotae

Infineon Technologies

IRF6655TR1

Wahanga Tapeke: 915

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A (Ta), 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V,

Momotae

IPB120N06S402ATMA1

Infineon Technologies

IPB120N06S402ATMA1

Wahanga Tapeke: 956

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V,

Momotae

IRF7779L2TR1PBF

Infineon Technologies

IRF7779L2TR1PBF

Wahanga Tapeke: 874

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 375A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V,

Momotae

Infineon Technologies

IRF6798MTR1PBF

Wahanga Tapeke: 920

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37A (Ta), 197A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.3 mOhm @ 37A, 10V,

Momotae

Infineon Technologies

IRF6794MTRPBF

Wahanga Tapeke: 970

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Ta), 200A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V,

Momotae

IPI80P03P4L07AKSA1

Infineon Technologies

IPI80P03P4L07AKSA1

Wahanga Tapeke: 82259

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V,

Momotae

3600

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