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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
IPB022N04LGATMA1
Infineon Technologies

IPB022N04LGATMA1

Wahanga Tapeke: 1386

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V,

Momotae
IRLR2905TRLPBF
Infineon Technologies

IRLR2905TRLPBF

Wahanga Tapeke: 165150

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V,

Momotae
IRFU3607PBF
Infineon Technologies

IRFU3607PBF

Wahanga Tapeke: 40268

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V,

Momotae
IRF6898MTR1PBF
Infineon Technologies

IRF6898MTR1PBF

Wahanga Tapeke: 1392

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Ta), 213A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.1 mOhm @ 35A, 10V,

Momotae
IPI50R299CPXKSA1
Infineon Technologies

IPI50R299CPXKSA1

Wahanga Tapeke: 30953

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V,

Momotae
IRFI540NPBF
Infineon Technologies

IRFI540NPBF

Wahanga Tapeke: 41424

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 11A, 10V,

Momotae
IRF6894MTR1PBF
Infineon Technologies

IRF6894MTR1PBF

Wahanga Tapeke: 1349

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Ta), 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.3 mOhm @ 33A, 10V,

Momotae
IPD60R520CPBTMA1
Infineon Technologies

IPD60R520CPBTMA1

Wahanga Tapeke: 1477

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V,

Momotae
IPW65R660CFDFKSA1
Infineon Technologies

IPW65R660CFDFKSA1

Wahanga Tapeke: 42282

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V,

Momotae
IPI65R420CFDXKSA1
Infineon Technologies

IPI65R420CFDXKSA1

Wahanga Tapeke: 64557

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V,

Momotae
IPN70R750P7SATMA1
Infineon Technologies

IPN70R750P7SATMA1

Wahanga Tapeke: 9964

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V,

Momotae
IPI80N04S4L04AKSA1
Infineon Technologies

IPI80N04S4L04AKSA1

Wahanga Tapeke: 96724

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V,

Momotae
IPB052N04NGATMA1
Infineon Technologies

IPB052N04NGATMA1

Wahanga Tapeke: 1431

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 70A, 10V,

Momotae
IRFB7530PBF
Infineon Technologies

IRFB7530PBF

Wahanga Tapeke: 22543

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V,

Momotae
IPD250N06N3GBTMA1
Infineon Technologies

IPD250N06N3GBTMA1

Wahanga Tapeke: 1440

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V,

Momotae
IPB023N04NGATMA1
Infineon Technologies

IPB023N04NGATMA1

Wahanga Tapeke: 6170

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V,

Momotae
IPB110N20N3LFATMA1
Infineon Technologies

IPB110N20N3LFATMA1

Wahanga Tapeke: 18377

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 88A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 88A, 10V,

Momotae
IRLH7134TR2PBF
Infineon Technologies

IRLH7134TR2PBF

Wahanga Tapeke: 1435

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Ta), 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V,

Momotae
IRFB7540PBF
Infineon Technologies

IRFB7540PBF

Wahanga Tapeke: 42181

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V,

Momotae
IPB260N06N3GATMA1
Infineon Technologies

IPB260N06N3GATMA1

Wahanga Tapeke: 1437

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25.7 mOhm @ 27A, 10V,

Momotae
IPD068P03L3GBTMA1
Infineon Technologies

IPD068P03L3GBTMA1

Wahanga Tapeke: 1389

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.8 mOhm @ 70A, 10V,

Momotae
IPA65R600C6XKSA1
Infineon Technologies

IPA65R600C6XKSA1

Wahanga Tapeke: 76264

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V,

Momotae
IRFR48ZTRLPBF
Infineon Technologies

IRFR48ZTRLPBF

Wahanga Tapeke: 132108

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V,

Momotae
IPP65R380C6XKSA1
Infineon Technologies

IPP65R380C6XKSA1

Wahanga Tapeke: 59867

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V,

Momotae
IPD60R520C6BTMA1
Infineon Technologies

IPD60R520C6BTMA1

Wahanga Tapeke: 1417

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V,

Momotae
IPB093N04LGATMA1
Infineon Technologies

IPB093N04LGATMA1

Wahanga Tapeke: 1417

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V,

Momotae
IPI50R250CPXKSA1
Infineon Technologies

IPI50R250CPXKSA1

Wahanga Tapeke: 48805

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V,

Momotae
IPB65R280C6ATMA1
Infineon Technologies

IPB65R280C6ATMA1

Wahanga Tapeke: 56772

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V,

Momotae
IPB65R190C6ATMA1
Infineon Technologies

IPB65R190C6ATMA1

Wahanga Tapeke: 45430

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V,

Momotae
IPB020N08N5ATMA1
Infineon Technologies

IPB020N08N5ATMA1

Wahanga Tapeke: 33910

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V,

Momotae
IPP100N04S4H2AKSA1
Infineon Technologies

IPP100N04S4H2AKSA1

Wahanga Tapeke: 80220

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V,

Momotae
IPB60R520CPATMA1
Infineon Technologies

IPB60R520CPATMA1

Wahanga Tapeke: 6152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V,

Momotae
IPN95R3K7P7ATMA1
Infineon Technologies

IPN95R3K7P7ATMA1

Wahanga Tapeke: 9929

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 950V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.7 Ohm @ 800mA, 10V,

Momotae
IPB097N08N3 G
Infineon Technologies

IPB097N08N3 G

Wahanga Tapeke: 1439

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 9.7 mOhm @ 46A, 10V,

Momotae
IRFSL4410ZPBF
Infineon Technologies

IRFSL4410ZPBF

Wahanga Tapeke: 23253

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 97A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V,

Momotae
IPB65R420CFDATMA1
Infineon Technologies

IPB65R420CFDATMA1

Wahanga Tapeke: 1398

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V,

Momotae