Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

NX7002BKXBZ

Wahanga Tapeke: 151844

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 260mA, Rds Kei (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PMDPB70XP,115

Wahanga Tapeke: 189968

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, Rds Kei (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

NX3008NBKSH

Wahanga Tapeke: 194648

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA (Ta), Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

NX6020CAKSX

Wahanga Tapeke: 2501

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Rds Kei (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7504TRPBF

Wahanga Tapeke: 176860

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7304TRPBF

Wahanga Tapeke: 196744

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

Infineon Technologies

IPG20N06S415AATMA1

Wahanga Tapeke: 108935

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

Ki te hiahia

Vishay Siliconix

SI1024X-T1-GE3

Wahanga Tapeke: 185794

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 485mA, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

Vishay Siliconix

SIA918EDJ-T1-GE3

Wahanga Tapeke: 171457

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

Vishay Siliconix

SIZ730DT-T1-GE3

Wahanga Tapeke: 117470

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A, 35A, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQ4940AEY-T1_GE3

Wahanga Tapeke: 158519

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4925DDY-T1-GE3

Wahanga Tapeke: 189530

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 7.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Vishay Siliconix

SIRB40DP-T1-GE3

Wahanga Tapeke: 117423

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Rds Kei (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQ4284EY-T1_GE3

Wahanga Tapeke: 100159

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJQ906EL-T1_GE3

Wahanga Tapeke: 63261

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJ958EP-T1_GE3

Wahanga Tapeke: 2544

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Rds Kei (Max) @ Id, Vgs: 34.9 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7942DP-T1-GE3

Wahanga Tapeke: 63492

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI1967DH-T1-GE3

Wahanga Tapeke: 103126

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7252DP-T1-GE3

Wahanga Tapeke: 70505

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36.7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJB42EP-T1_GE3

Wahanga Tapeke: 152436

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4228DY-T1-E3

Wahanga Tapeke: 190258

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia

Rohm Semiconductor

QH8MA4TCR

Wahanga Tapeke: 163064

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, 8A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

QS8M11TCR

Wahanga Tapeke: 196980

Momo FET: N and P-Channel, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A,

Ki te hiahia

Rohm Semiconductor

SP8J65TB1

Wahanga Tapeke: 69246

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

SH8M12TB1

Wahanga Tapeke: 181504

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, 4.5A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

ON Semiconductor

NTMFD4C88NT3G

Wahanga Tapeke: 40053

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.7A, 14.2A, Rds Kei (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

ON Semiconductor

NVMFD5483NLT3G

Wahanga Tapeke: 73044

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

ON Semiconductor

MCH6663-TL-H

Wahanga Tapeke: 186117

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, 1.5A, Rds Kei (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V,

Ki te hiahia

Diodes Incorporated

DMN53D0LDW-13

Wahanga Tapeke: 146068

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 360mA, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMG6602SVT-7

Wahanga Tapeke: 125578

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 4.5V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, 2.8A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMG4800LSD-13

Wahanga Tapeke: 135796

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N15AFU,LF

Wahanga Tapeke: 175270

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia

Panasonic Electronic Components

MTM78E2B0LBF

Wahanga Tapeke: 117955

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 2A, 4V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Ki te hiahia

Panasonic Electronic Components

UP0187B00L

Wahanga Tapeke: 2665

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

Ki te hiahia

Texas Instruments

CSD87588N

Wahanga Tapeke: 140862

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

Ki te hiahia

Micro Commercial Co

SIL2623-TP

Wahanga Tapeke: 2508

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia