Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

PMGD280UN,115

Wahanga Tapeke: 179576

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 870mA, Rds Kei (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

NX3020NAKV,115

Wahanga Tapeke: 155135

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PMGD175XNEX

Wahanga Tapeke: 139161

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 870mA (Ta), Rds Kei (Max) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

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ON Semiconductor

NVMFD5873NLWFT1G

Wahanga Tapeke: 71856

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

ON Semiconductor

NTJD4105CT1G

Wahanga Tapeke: 180528

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 630mA, 775mA, Rds Kei (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDS4935BZ

Wahanga Tapeke: 185680

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

ON Semiconductor

FDME1024NZT

Wahanga Tapeke: 131909

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJ968EP-T1_GE3

Wahanga Tapeke: 165139

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23.5A (Tc), Rds Kei (Max) @ Id, Vgs: 33.6 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SIZ710DT-T1-GE3

Wahanga Tapeke: 110666

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A, 35A, Rds Kei (Max) @ Id, Vgs: 6.8 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI5513CDC-T1-E3

Wahanga Tapeke: 128739

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, 3.7A, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4286DY-T1-GE3

Wahanga Tapeke: 153479

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQ4946AEY-T1_GE3

Wahanga Tapeke: 121475

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SIB900EDK-T1-GE3

Wahanga Tapeke: 148740

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI5515CDC-T1-E3

Wahanga Tapeke: 195955

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

Ki te hiahia

Vishay Siliconix

SQ3585EV-T1_GE3

Wahanga Tapeke: 2632

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.57A (Tc), 2.5A (Tc), Rds Kei (Max) @ Id, Vgs: 77 mOhm @ 1A, 4.5V, 166 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI1922EDH-T1-GE3

Wahanga Tapeke: 148911

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7212DN-T1-GE3

Wahanga Tapeke: 141942

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQS966ENW-T1_GE3

Wahanga Tapeke: 2544

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 1.25A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI1016CX-T1-GE3

Wahanga Tapeke: 151464

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7311TRPBF

Wahanga Tapeke: 168715

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7316TRPBF

Wahanga Tapeke: 172337

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7904TRPBF

Wahanga Tapeke: 188754

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, 11A, Rds Kei (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,

Ki te hiahia

Infineon Technologies

IRF7303TRPBF

Wahanga Tapeke: 185377

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Infineon Technologies

IPG20N04S408AATMA1

Wahanga Tapeke: 101294

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 30µA,

Ki te hiahia

Infineon Technologies

IRF7342TRPBF

Wahanga Tapeke: 156976

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Rohm Semiconductor

SH8K4TB1

Wahanga Tapeke: 107909

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

QS8J1TR

Wahanga Tapeke: 162895

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

Rohm Semiconductor

QS8J11TCR

Wahanga Tapeke: 180714

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

Diodes Incorporated

DMN6040SSD-13

Wahanga Tapeke: 169983

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMN3018SSD-13

Wahanga Tapeke: 138401

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMN2004VK-7

Wahanga Tapeke: 165948

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 540mA, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMP4025LSD-13

Wahanga Tapeke: 193316

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMN63D8LDW-7

Wahanga Tapeke: 177171

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, Rds Kei (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMN5L06VK-7

Wahanga Tapeke: 133884

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Taiwan Semiconductor Corporation

TSM6968DCA RVG

Wahanga Tapeke: 25858

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Tc), Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Central Semiconductor Corp

CMLDM7484 TR

Wahanga Tapeke: 177095

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 450mA, Rds Kei (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia