Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

SI4931DY-T1-GE3

Wahanga Tapeke: 180864

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 350µA,

Ki te hiahia

Vishay Siliconix

SI4228DY-T1-GE3

Wahanga Tapeke: 190253

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI8902AEDB-T2-E1

Wahanga Tapeke: 3310

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJ960EP-T1_GE3

Wahanga Tapeke: 77437

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SIA527DJ-T1-GE3

Wahanga Tapeke: 180836

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SIB912DK-T1-GE3

Wahanga Tapeke: 125137

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI9933CDY-T1-GE3

Wahanga Tapeke: 185277

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7942DP-T1-E3

Wahanga Tapeke: 63525

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7922DN-T1-GE3

Wahanga Tapeke: 86516

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI1036X-T1-GE3

Wahanga Tapeke: 2514

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 610mA (Ta), Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7956DP-T1-GE3

Wahanga Tapeke: 44000

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

NX1029X,115

Wahanga Tapeke: 166606

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 330mA, 170mA, Rds Kei (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PMGD780SN,115

Wahanga Tapeke: 171536

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 490mA, Rds Kei (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Rohm Semiconductor

EM6K1T2R

Wahanga Tapeke: 188653

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia

Rohm Semiconductor

QS5K2TR

Wahanga Tapeke: 110824

Momo FET: 2 N-Channel (Dual) Common Source, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

QH8JA1TCR

Wahanga Tapeke: 135582

Momo FET: 2 P-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Ki te hiahia

Rohm Semiconductor

UM6K1NTN

Wahanga Tapeke: 176441

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N56FE,LM

Wahanga Tapeke: 179879

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA, Rds Kei (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N15AFE,LM

Wahanga Tapeke: 178067

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia

ON Semiconductor

FDG6301N-F085

Wahanga Tapeke: 2507

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

NVMFD5485NLWFT3G

Wahanga Tapeke: 90689

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

ON Semiconductor

NVLJD4007NZTAG

Wahanga Tapeke: 139596

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 245mA, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia

ON Semiconductor

EFC6605R-TR

Wahanga Tapeke: 197820

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 2.5V Drive,

Ki te hiahia

Infineon Technologies

IPG20N04S4L08AATMA1

Wahanga Tapeke: 137972

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 22µA,

Ki te hiahia

Infineon Technologies

IPG20N06S415ATMA2

Wahanga Tapeke: 113173

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

Ki te hiahia

Infineon Technologies

IPG20N04S4L11ATMA1

Wahanga Tapeke: 172926

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 15µA,

Ki te hiahia

Infineon Technologies

IRF7341GTRPBF

Wahanga Tapeke: 82222

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Infineon Technologies

IPG20N04S4L07ATMA1

Wahanga Tapeke: 104521

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

Ki te hiahia

Infineon Technologies

IRF7314TRPBF

Wahanga Tapeke: 193267

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

Diodes Incorporated

DMG1023UV-7

Wahanga Tapeke: 104503

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.03A, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMN2011UFX-7

Wahanga Tapeke: 171759

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.2A (Ta), Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMC1017UPD-13

Wahanga Tapeke: 2684

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), 9.4A (Ta), Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, 32 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Diodes Incorporated

ZXMD63P03XTA

Wahanga Tapeke: 60635

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Texas Instruments

CSD88537ND

Wahanga Tapeke: 132851

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3.6V @ 250µA,

Ki te hiahia

Panasonic Electronic Components

UP0497900L

Wahanga Tapeke: 2637

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

Ki te hiahia

Panasonic Electronic Components

UP0487C00L

Wahanga Tapeke: 188334

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.3V @ 50µA,

Ki te hiahia