Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

IRF7317TRPBF

Wahanga Tapeke: 158547

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, 5.3A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

Infineon Technologies

IRFHS9351TRPBF

Wahanga Tapeke: 112687

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 10µA,

Ki te hiahia

Infineon Technologies

IRF7910TRPBF

Wahanga Tapeke: 127888

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

Infineon Technologies

IRL6297SDTRPBF

Wahanga Tapeke: 142257

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 15A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 35µA,

Ki te hiahia

Vishay Siliconix

SQJB40EP-T1_GE3

Wahanga Tapeke: 152466

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJ963EP-T1_GE3

Wahanga Tapeke: 91401

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7972DP-T1-GE3

Wahanga Tapeke: 149146

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJQ910EL-T1_GE3

Wahanga Tapeke: 2597

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Rds Kei (Max) @ Id, Vgs: 8.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7949DP-T1-E3

Wahanga Tapeke: 39374

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A, Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJB00EP-T1_GE3

Wahanga Tapeke: 152443

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4900DY-T1-E3

Wahanga Tapeke: 142035

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJQ980EL-T1_GE3

Wahanga Tapeke: 2601

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SIZF906ADT-T1-GE3

Wahanga Tapeke: 2533

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc), Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4214DDY-T1-E3

Wahanga Tapeke: 188973

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A, Rds Kei (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SQJB80EP-T1_GE3

Wahanga Tapeke: 152485

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PMDXB950UPEZ

Wahanga Tapeke: 193079

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PMDT290UNE,115

Wahanga Tapeke: 177961

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PMDPB70XPE,115

Wahanga Tapeke: 137499

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 79 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

NX3008PBKV,115

Wahanga Tapeke: 177076

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, Rds Kei (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia

Rohm Semiconductor

QS6K21TR

Wahanga Tapeke: 129283

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

EM6M2T2R

Wahanga Tapeke: 127455

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

Toshiba Semiconductor and Storage

TPC8223-H,LQ(S

Wahanga Tapeke: 150969

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N44FE,LM

Wahanga Tapeke: 105414

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N7002BFE,LM

Wahanga Tapeke: 179839

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6L39TU,LF

Wahanga Tapeke: 111677

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 1.8V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA, Rds Kei (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N37FU,LF

Wahanga Tapeke: 156819

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA (Ta), Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

ON Semiconductor

NTHD4102PT1G

Wahanga Tapeke: 108053

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDMB3800N

Wahanga Tapeke: 191355

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

ON Semiconductor

FDS6890A

Wahanga Tapeke: 101115

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDY1002PZ

Wahanga Tapeke: 182634

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 830mA, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

ON Semiconductor

FDMA1032CZ

Wahanga Tapeke: 89328

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A, 3.1A, Rds Kei (Max) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDME1034CZT

Wahanga Tapeke: 154682

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, 2.6A, Rds Kei (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

ON Semiconductor

FDY3000NZ

Wahanga Tapeke: 111326

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 600mA, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMC2400UV-7

Wahanga Tapeke: 138188

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.03A, 700mA, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

Diodes Incorporated

DMG1016V-7

Wahanga Tapeke: 107374

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 870mA, 640mA, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Diodes Incorporated

DMG5802LFX-7

Wahanga Tapeke: 173089

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia