Transistors - FETs, MOSFETs - Huinga

SH8K2TB1

SH8K2TB1

Wahanga Tapeke: 169908

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SP8K2TB

SP8K2TB

Wahanga Tapeke: 195188

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SH8K15TB1

SH8K15TB1

Wahanga Tapeke: 137046

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
QS8K11TCR

QS8K11TCR

Wahanga Tapeke: 198738

Momo FET: 2 N-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
US6M1TR

US6M1TR

Wahanga Tapeke: 141982

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A, 1A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SH8M13GZETB

SH8M13GZETB

Wahanga Tapeke: 173570

Momo FET: N and P-Channel, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 7A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SI1965DH-T1-GE3

SI1965DH-T1-GE3

Wahanga Tapeke: 150223

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SI1016X-T1-GE3

SI1016X-T1-GE3

Wahanga Tapeke: 135127

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 485mA, 370mA, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SI6926ADQ-T1-E3

SI6926ADQ-T1-E3

Wahanga Tapeke: 129467

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SI1023CX-T1-GE3

SI1023CX-T1-GE3

Wahanga Tapeke: 136072

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SQ3989EV-T1_GE3

SQ3989EV-T1_GE3

Wahanga Tapeke: 124228

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Tc), Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 400mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI4670DY-T1-GE3

SI4670DY-T1-GE3

Wahanga Tapeke: 139899

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
SIZ300DT-T1-GE3

SIZ300DT-T1-GE3

Wahanga Tapeke: 146800

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, 28A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
SI7540ADP-T1-GE3

SI7540ADP-T1-GE3

Wahanga Tapeke: 87195

Momo FET: N and P-Channel, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, 9A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia
SI4943CDY-T1-E3

SI4943CDY-T1-E3

Wahanga Tapeke: 89694

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SQJ992EP-T1_GE3

SQJ992EP-T1_GE3

Wahanga Tapeke: 130455

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
SQJ570EP-T1_GE3

SQJ570EP-T1_GE3

Wahanga Tapeke: 165202

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), 9.5A (Tc), Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
SI5902BDC-T1-GE3

SI5902BDC-T1-GE3

Wahanga Tapeke: 125173

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SQ1539EH-T1_GE3

SQ1539EH-T1_GE3

Wahanga Tapeke: 2491

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 850mA (Tc), Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 1A, 10V, 940 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

Ki te hiahia
DMN67D8LDW-13

DMN67D8LDW-13

Wahanga Tapeke: 104906

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
DMN2005DLP4K-7

DMN2005DLP4K-7

Wahanga Tapeke: 162696

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 900mV @ 100µA,

Ki te hiahia
CSD85302L

CSD85302L

Wahanga Tapeke: 146505

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard,

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CSD86360Q5D

CSD86360Q5D

Wahanga Tapeke: 67326

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia
TSM200N03DPQ33 RGG

TSM200N03DPQ33 RGG

Wahanga Tapeke: 2506

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
FDMA1023PZ

FDMA1023PZ

Wahanga Tapeke: 100824

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
FDS8958B

FDS8958B

Wahanga Tapeke: 194401

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A, 4.5A, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
NVMFD5485NLT3G

NVMFD5485NLT3G

Wahanga Tapeke: 94178

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
NTJD4158CT1G

NTJD4158CT1G

Wahanga Tapeke: 159746

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA, 880mA, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Ki te hiahia
EFC6612R-TF

EFC6612R-TF

Wahanga Tapeke: 157184

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive,

Ki te hiahia
IRF7105TRPBF

IRF7105TRPBF

Wahanga Tapeke: 196914

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, 2.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1

Wahanga Tapeke: 195154

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A, Rds Kei (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 90µA,

Ki te hiahia
IPG20N06S4L14ATMA2

IPG20N06S4L14ATMA2

Wahanga Tapeke: 126778

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Ki te hiahia
IRF7304

IRF7304

Wahanga Tapeke: 40531

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia
PMDXB1200UPEZ

PMDXB1200UPEZ

Wahanga Tapeke: 113236

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 410mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Ki te hiahia
PMCXB900UEZ

PMCXB900UEZ

Wahanga Tapeke: 170594

Momo FET: N and P-Channel Complementary, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 600mA, 500mA, Rds Kei (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Ki te hiahia
TPC8408,LQ(S

TPC8408,LQ(S

Wahanga Tapeke: 128587

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A, 5.3A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,

Ki te hiahia