Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,
Momo FET: 2 N-Channel (Dual) Common Source, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 880mA, Rds Kei (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.1A, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 500mV @ 250µA (Min),
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.3A, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 700µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, 4.4A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.45A, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.2A, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 25V,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, 460mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, 3.6A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.6A, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, 1.5A, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1000A, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 800A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300A, Rds Kei (Max) @ Id, Vgs: 3.6 mOhm @ 150A, 10V, Vgs (th) (Max) @ Id: 4V @ 2mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 4.5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.4A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
