Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

SI5933DC-T1-GE3

Wahanga Tapeke: 2867

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4563DY-T1-E3

Wahanga Tapeke: 2704

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI6969BDQ-T1-E3

Wahanga Tapeke: 2784

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

Ki te hiahia

Vishay Siliconix

VQ1006P-E3

Wahanga Tapeke: 2906

Momo FET: 4 N-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA, Rds Kei (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Vishay Siliconix

SI4942DY-T1-E3

Wahanga Tapeke: 2870

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4940DY-T1-GE3

Wahanga Tapeke: 2808

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Vishay Siliconix

SI4816DY-T1-E3

Wahanga Tapeke: 2905

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, 7.7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI5509DC-T1-E3

Wahanga Tapeke: 2749

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A, 4.8A, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4914BDY-T1-GE3

Wahanga Tapeke: 118908

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.4A, 8A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4967DY-T1-E3

Wahanga Tapeke: 2883

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Ki te hiahia

Vishay Siliconix

SI4940DY-T1-E3

Wahanga Tapeke: 2875

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Vishay Siliconix

SI3529DV-T1-GE3

Wahanga Tapeke: 2831

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, 1.95A, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

ON Semiconductor

FDMC8200S_F106

Wahanga Tapeke: 3352

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 8.5A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

ON Semiconductor

FW812-TL-E

Wahanga Tapeke: 2832

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 35V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Ki te hiahia

ON Semiconductor

NTLUD3191PZTBG

Wahanga Tapeke: 2826

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.1A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

ON Semiconductor

FDS8962C

Wahanga Tapeke: 2774

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, 5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

ON Semiconductor

NTMC1300R2

Wahanga Tapeke: 3306

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A, 1.8A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

ON Semiconductor

FDW9926NZ

Wahanga Tapeke: 2770

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDR8308P

Wahanga Tapeke: 2748

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

EMH2407-TL-H

Wahanga Tapeke: 165186

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V,

Ki te hiahia

Diodes Incorporated

ZXMD65P03N8TA

Wahanga Tapeke: 2983

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Diodes Incorporated

ZXMD63P03XTC

Wahanga Tapeke: 2768

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Diodes Incorporated

ZXMN10A08DN8TC

Wahanga Tapeke: 2701

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA (Min),

Ki te hiahia

Infineon Technologies

IRF7350PBF

Wahanga Tapeke: 2677

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, 1.5A, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7317PBF

Wahanga Tapeke: 75561

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, 5.3A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia

Infineon Technologies

IRF7338PBF

Wahanga Tapeke: 2697

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, 3A, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

Wahanga Tapeke: 2780

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

Wahanga Tapeke: 2844

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Ki te hiahia

Rohm Semiconductor

MP6M11TCR

Wahanga Tapeke: 2920

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

MP6K14TCR

Wahanga Tapeke: 2899

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

SP8M51TB1

Wahanga Tapeke: 2655

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, 2.5A,

Ki te hiahia

Texas Instruments

CSD75208W1015T

Wahanga Tapeke: 192795

Momo FET: 2 P-Channel (Dual) Common Source, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A, Rds Kei (Max) @ Id, Vgs: 68 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia

STMicroelectronics

STS1DN45K3

Wahanga Tapeke: 2689

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA, Rds Kei (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 50µA,

Ki te hiahia

EPC

EPC2103

Wahanga Tapeke: 23026

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Ki te hiahia

EPC

EPC2105

Wahanga Tapeke: 24303

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A, 38A, Rds Kei (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

Ki te hiahia

IXYS

GWM120-0075X1-SMDSAM

Wahanga Tapeke: 2788

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia