Transistors - FETs, MOSFETs - Huinga

QJD1210010

Wahanga Tapeke: 2869

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

Wahanga Tapeke: 2941

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

HCT802TX

Wahanga Tapeke: 1374

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, 1.1A, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

ZXMD63C02XTC

Wahanga Tapeke: 2674

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

DMP2240UDM-7

Wahanga Tapeke: 152559

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI4500BDY-T1-E3

Wahanga Tapeke: 2701

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, 3.8A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI3909DV-T1-E3

Wahanga Tapeke: 2856

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 500mV @ 250µA (Min),

SI4830CDY-T1-GE3

Wahanga Tapeke: 135529

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

SI9933BDY-T1-E3

Wahanga Tapeke: 2801

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI1553DL-T1-E3

Wahanga Tapeke: 2696

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 660mA, 410mA, Rds Kei (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

SI9945AEY-T1

Wahanga Tapeke: 2814

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1539DL-T1-GE3

Wahanga Tapeke: 2837

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 540mA, 420mA, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

SI4330DY-T1-GE3

Wahanga Tapeke: 2810

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, Rds Kei (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI3905DV-T1-E3

Wahanga Tapeke: 2795

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI7501DN-T1-GE3

Wahanga Tapeke: 57296

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A, 4.5A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI5975DC-T1-GE3

Wahanga Tapeke: 2853

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A, Rds Kei (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 1mA (Min),

SI6943BDQ-T1-GE3

Wahanga Tapeke: 2834

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

SI6963BDQ-T1-GE3

Wahanga Tapeke: 2791

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

STS2DPF80

Wahanga Tapeke: 2631

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

STS3C2F100

Wahanga Tapeke: 2685

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

JANTX2N7335

Wahanga Tapeke: 2875

Momo FET: 4 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 750mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

EPC2105ENG

Wahanga Tapeke: 2911

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A, 38A, Rds Kei (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA,

NDS9953A

Wahanga Tapeke: 2676

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

FDS3812

Wahanga Tapeke: 2733

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 74 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDG6320C_D87Z

Wahanga Tapeke: 2690

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, 140mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8651R-R-TL-H

Wahanga Tapeke: 2871

FDJ1028N

Wahanga Tapeke: 2716

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDMA1029PZ

Wahanga Tapeke: 178279

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

IRF8513TRPBF

Wahanga Tapeke: 2774

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 11A, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

IRF7314PBF

Wahanga Tapeke: 86093

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

IRF7907PBF

Wahanga Tapeke: 2738

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.1A, 11A, Rds Kei (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

IRF9910PBF

Wahanga Tapeke: 2659

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, 12A, Rds Kei (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

IRF7754TRPBF

Wahanga Tapeke: 2835

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

IRF9956TR

Wahanga Tapeke: 2695

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SP8K5TB

Wahanga Tapeke: 2680

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TPC8208(TE12L,Q)

Wahanga Tapeke: 2694

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,