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Transistors - FETs, MOSFETs - Huinga

SSM6P49NU,LF
Toshiba Semiconductor and Storage

SSM6P49NU,LF

Wahanga Tapeke: 154268

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

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SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

Wahanga Tapeke: 9999

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

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FDS9933A
ON Semiconductor

FDS9933A

Wahanga Tapeke: 190178

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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FDC6506P
ON Semiconductor

FDC6506P

Wahanga Tapeke: 194858

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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NVMFD5483NLT1G
ON Semiconductor

NVMFD5483NLT1G

Wahanga Tapeke: 65498

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
FDC6305N
ON Semiconductor

FDC6305N

Wahanga Tapeke: 129016

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
NTUD3129PT5G
ON Semiconductor

NTUD3129PT5G

Wahanga Tapeke: 2940

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 140mA, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
NVMFD5875NLT1G
ON Semiconductor

NVMFD5875NLT1G

Wahanga Tapeke: 155747

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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FDMS3668S
ON Semiconductor

FDMS3668S

Wahanga Tapeke: 82251

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A, 18A, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

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NVMFD5C470NLWFT1G
ON Semiconductor

NVMFD5C470NLWFT1G

Wahanga Tapeke: 277

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Ki te hiahia
FF11MR12W1M1B11BOMA1
Infineon Technologies

FF11MR12W1M1B11BOMA1

Wahanga Tapeke: 3093

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 5.55V @ 40mA,

Ki te hiahia
IRF6723M2DTR1P
Infineon Technologies

IRF6723M2DTR1P

Wahanga Tapeke: 3004

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Ki te hiahia
TSM6968SDCA RVG
Taiwan Semiconductor Corporation

TSM6968SDCA RVG

Wahanga Tapeke: 9997

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Ta), Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMN2016LHAB-7
Diodes Incorporated

DMN2016LHAB-7

Wahanga Tapeke: 190312

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A, Rds Kei (Max) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia
DMG1016VQ-13
Diodes Incorporated

DMG1016VQ-13

Wahanga Tapeke: 163191

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 870mA, 640mA, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMC1030UFDB-13
Diodes Incorporated

DMC1030UFDB-13

Wahanga Tapeke: 115059

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A (Ta), 3.9A (Ta), Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMN2029USD-13
Diodes Incorporated

DMN2029USD-13

Wahanga Tapeke: 136935

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
ZXMHC6A07T8TA
Diodes Incorporated

ZXMHC6A07T8TA

Wahanga Tapeke: 83548

Momo FET: 2 N and 2 P-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A, 1.3A, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SH8M41TB1
Rohm Semiconductor

SH8M41TB1

Wahanga Tapeke: 127833

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, 2.6A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
QH8KA4TCR
Rohm Semiconductor

QH8KA4TCR

Wahanga Tapeke: 78816

Momo FET: 2 N-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia
TT8J21TR
Rohm Semiconductor

TT8J21TR

Wahanga Tapeke: 169061

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia
SH8J66TB1
Rohm Semiconductor

SH8J66TB1

Wahanga Tapeke: 75609

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
SI3590DV-T1-GE3
Vishay Siliconix

SI3590DV-T1-GE3

Wahanga Tapeke: 199636

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, 1.7A, Rds Kei (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI7998DP-T1-GE3
Vishay Siliconix

SI7998DP-T1-GE3

Wahanga Tapeke: 103462

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, 30A, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
SIA915DJ-T4-GE3
Vishay Siliconix

SIA915DJ-T4-GE3

Wahanga Tapeke: 2966

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A (Ta), 4.5A (Tc), Rds Kei (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
SIZ322DT-T1-GE3
Vishay Siliconix

SIZ322DT-T1-GE3

Wahanga Tapeke: 266

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
SI5944DU-T1-GE3
Vishay Siliconix

SI5944DU-T1-GE3

Wahanga Tapeke: 2992

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI7997DP-T1-GE3
Vishay Siliconix

SI7997DP-T1-GE3

Wahanga Tapeke: 69522

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
EPC2106ENGRT
EPC

EPC2106ENGRT

Wahanga Tapeke: 88131

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

Ki te hiahia
TC1550TG-G
Microchip Technology

TC1550TG-G

Wahanga Tapeke: 16138

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, Rds Kei (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia
STL65DN3LLH5
STMicroelectronics

STL65DN3LLH5

Wahanga Tapeke: 88941

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
STS2DNF30L
STMicroelectronics

STS2DNF30L

Wahanga Tapeke: 198813

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
PMGD130UN,115
NXP USA Inc.

PMGD130UN,115

Wahanga Tapeke: 2962

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.2A, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
CTLDM303N-M832DS BK
Central Semiconductor Corp

CTLDM303N-M832DS BK

Wahanga Tapeke: 3045

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A (Ta), Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Ki te hiahia
MTMC8E280LBF
Panasonic Electronic Components

MTMC8E280LBF

Wahanga Tapeke: 139278

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Ki te hiahia
VHM40-06P1
IXYS

VHM40-06P1

Wahanga Tapeke: 1544

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5.5V @ 3mA,

Ki te hiahia