Transistors - FETs, MOSFETs - Huinga

SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

Wahanga Tapeke: 98746

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

Wahanga Tapeke: 89691

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia
SI5517DU-T1-GE3

SI5517DU-T1-GE3

Wahanga Tapeke: 139934

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SI4804CDY-T1-GE3

SI4804CDY-T1-GE3

Wahanga Tapeke: 85201

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
SI5515DC-T1-GE3

SI5515DC-T1-GE3

Wahanga Tapeke: 153475

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, 3A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SQ1902AEL-T1_GE3

SQ1902AEL-T1_GE3

Wahanga Tapeke: 9906

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 780mA (Tc), Rds Kei (Max) @ Id, Vgs: 415 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
SI4204DY-T1-GE3

SI4204DY-T1-GE3

Wahanga Tapeke: 80891

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19.8A, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
CSD86311W1723

CSD86311W1723

Wahanga Tapeke: 155741

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 2A, 8V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia
CSD86356Q5D

CSD86356Q5D

Wahanga Tapeke: 10781

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, 5V Drive, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Ta), Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA,

Ki te hiahia
CMLDM3757 TR

CMLDM3757 TR

Wahanga Tapeke: 173409

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 540mA, 430mA, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
IRFI4019HG-117P

IRFI4019HG-117P

Wahanga Tapeke: 3354

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.7A, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 4.9V @ 50µA,

Ki te hiahia
DMN4034SSD-13

DMN4034SSD-13

Wahanga Tapeke: 104438

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
DMPH6050SSDQ-13

DMPH6050SSDQ-13

Wahanga Tapeke: 176283

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
DMC4040SSDQ-13

DMC4040SSDQ-13

Wahanga Tapeke: 191341

Momo FET: N and P-Channel Complementary, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Ki te hiahia
DMP3056LSDQ-13

DMP3056LSDQ-13

Wahanga Tapeke: 10772

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A (Ta), Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia
DMC1229UFDB-7

DMC1229UFDB-7

Wahanga Tapeke: 185667

Momo FET: N and P-Channel, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A, 3.8A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMN2215UDM-7

DMN2215UDM-7

Wahanga Tapeke: 186022

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMG1016UDW-7

DMG1016UDW-7

Wahanga Tapeke: 177152

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.07A, 845mA, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMT3020LFDB-13

DMT3020LFDB-13

Wahanga Tapeke: 176284

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A (Ta), Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
DMG8822UTS-13

DMG8822UTS-13

Wahanga Tapeke: 155822

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A (Ta), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia
FDMB2307NZ

FDMB2307NZ

Wahanga Tapeke: 191134

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate,

Ki te hiahia
FDPC8016S

FDPC8016S

Wahanga Tapeke: 69237

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, 35A, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
NVMFD5C672NLWFT1G

NVMFD5C672NLWFT1G

Wahanga Tapeke: 6532

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 49A (Tc), Rds Kei (Max) @ Id, Vgs: 11.9 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

Ki te hiahia
EMH2604-TL-H

EMH2604-TL-H

Wahanga Tapeke: 118126

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, 3A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,

Ki te hiahia
FDME1023PZT

FDME1023PZT

Wahanga Tapeke: 114825

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A, Rds Kei (Max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
FDMA1027P

FDMA1027P

Wahanga Tapeke: 148465

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia
FC4B22270L1

FC4B22270L1

Wahanga Tapeke: 167168

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Vgs (th) (Max) @ Id: 1.4V @ 310µA,

Ki te hiahia
TPD3215M

TPD3215M

Wahanga Tapeke: 455

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V,

Ki te hiahia
SSM6N61NU,LF

SSM6N61NU,LF

Wahanga Tapeke: 117701

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia
NX3008CBKV,115

NX3008CBKV,115

Wahanga Tapeke: 142413

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA, 220mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia
GWM100-01X1-SMDSAM

GWM100-01X1-SMDSAM

Wahanga Tapeke: 2800

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Ki te hiahia
GMM3X180-004X2-SMDSAM

GMM3X180-004X2-SMDSAM

Wahanga Tapeke: 3145

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

Ki te hiahia
MCB40P1200LB

MCB40P1200LB

Wahanga Tapeke: 230

Momo FET: 2 N-Channel (Dual) Common Source, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A,

Ki te hiahia
PMDPB760ENX

PMDPB760ENX

Wahanga Tapeke: 2945

Ki te hiahia
QS6M4TR

QS6M4TR

Wahanga Tapeke: 185861

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia
SH8M3TB1

SH8M3TB1

Wahanga Tapeke: 180841

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, 4.5A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia