Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

STC5NF20V

Wahanga Tapeke: 3322

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA,

Ki te hiahia

Vishay Siliconix

SI6924AEDQ-T1-E3

Wahanga Tapeke: 2801

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 28V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7901EDN-T1-GE3

Wahanga Tapeke: 2866

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 800µA,

Ki te hiahia

Vishay Siliconix

SI7234DP-T1-GE3

Wahanga Tapeke: 47223

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7980DP-T1-GE3

Wahanga Tapeke: 96693

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI1026X-T1-E3

Wahanga Tapeke: 2694

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 305mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI1551DL-T1-GE3

Wahanga Tapeke: 2873

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 290mA, 410mA, Rds Kei (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7872DP-T1-GE3

Wahanga Tapeke: 71532

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI7980DP-T1-E3

Wahanga Tapeke: 2862

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4539ADY-T1-E3

Wahanga Tapeke: 2626

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, 3.7A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia

Vishay Siliconix

SI4923DY-T1-E3

Wahanga Tapeke: 2886

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI4910DY-T1-E3

Wahanga Tapeke: 2756

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia

Vishay Siliconix

SI3993DV-T1-E3

Wahanga Tapeke: 198401

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, Rds Kei (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Rohm Semiconductor

SH8M70TB1

Wahanga Tapeke: 2793

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, 2.5A, Rds Kei (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

Rohm Semiconductor

SP8M4FU6TB

Wahanga Tapeke: 74678

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, 7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

Rohm Semiconductor

SP8M8FU6TB

Wahanga Tapeke: 119511

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 4.5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

ON Semiconductor

ECH8619-TL-E

Wahanga Tapeke: 2845

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, 2A, Rds Kei (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V,

Ki te hiahia

ON Semiconductor

FDZ2554P

Wahanga Tapeke: 2769

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDW2501NZ

Wahanga Tapeke: 2739

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

FDJ1032C

Wahanga Tapeke: 2679

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A, 2.8A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

NTQD6968R2

Wahanga Tapeke: 2684

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

ON Semiconductor

FDW2512NZ

Wahanga Tapeke: 2739

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

MCH6602-TL-E

Wahanga Tapeke: 191190

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA, Rds Kei (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

Ki te hiahia

ON Semiconductor

FDS6898A_NF40

Wahanga Tapeke: 2814

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.4A, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

ON Semiconductor

NDS8852H

Wahanga Tapeke: 2661

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, 3.4A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Ki te hiahia

ON Semiconductor

FW811-TL-E

Wahanga Tapeke: 3294

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 35V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Ki te hiahia

NXP USA Inc.

PMDPB28UN,115

Wahanga Tapeke: 3299

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

NXP USA Inc.

PMDPB95XNE,115

Wahanga Tapeke: 2864

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.4A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Nexperia USA Inc.

PHN203,518

Wahanga Tapeke: 155067

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Ki te hiahia

Panasonic Electronic Components

XP0187800L

Wahanga Tapeke: 2685

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

Ki te hiahia

IXYS

IXTL2X240N055T

Wahanga Tapeke: 2780

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 140A, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

IXYS

GWM220-004P3-SMD

Wahanga Tapeke: 2843

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

EPC

EPC2100ENG

Wahanga Tapeke: 2900

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

Ki te hiahia

Infineon Technologies

IPG15N06S3L-45

Wahanga Tapeke: 2793

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 10µA,

Ki te hiahia

Infineon Technologies

IRFH4257DTRPBF

Wahanga Tapeke: 2942

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

Ki te hiahia

Infineon Technologies

IRF7304QTRPBF

Wahanga Tapeke: 2807

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Ki te hiahia