Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Huinga

  • Kāinga
  •  
  • Transistors - FETs, MOSFETs - Huinga
SI1034CX-T1-GE3
Vishay Siliconix

SI1034CX-T1-GE3

Wahanga Tapeke: 141761

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 610mA (Ta), Rds Kei (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SQ1922EEH-T1_GE3
Vishay Siliconix

SQ1922EEH-T1_GE3

Wahanga Tapeke: 2536

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 840mA (Tc), Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SQJB68EP-T1_GE3
Vishay Siliconix

SQJB68EP-T1_GE3

Wahanga Tapeke: 2512

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Rds Kei (Max) @ Id, Vgs: 92 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SIA906EDJ-T1-GE3
Vishay Siliconix

SIA906EDJ-T1-GE3

Wahanga Tapeke: 181601

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Momotae
SI7228DN-T1-GE3
Vishay Siliconix

SI7228DN-T1-GE3

Wahanga Tapeke: 108156

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SIZ200DT-T1-GE3
Vishay Siliconix

SIZ200DT-T1-GE3

Wahanga Tapeke: 2544

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc), Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Momotae
SI5908DC-T1-E3
Vishay Siliconix

SI5908DC-T1-E3

Wahanga Tapeke: 118929

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SQJ912BEP-T1_GE3
Vishay Siliconix

SQJ912BEP-T1_GE3

Wahanga Tapeke: 2589

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Momotae
SQ1912EH-T1_GE3
Vishay Siliconix

SQ1912EH-T1_GE3

Wahanga Tapeke: 132067

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA (Tc), Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SI7272DP-T1-GE3
Vishay Siliconix

SI7272DP-T1-GE3

Wahanga Tapeke: 110674

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI4931DY-T1-GE3
Vishay Siliconix

SI4931DY-T1-GE3

Wahanga Tapeke: 180864

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 350µA,

Momotae
SI4228DY-T1-GE3
Vishay Siliconix

SI4228DY-T1-GE3

Wahanga Tapeke: 190253

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Momotae
SI8902AEDB-T2-E1
Vishay Siliconix

SI8902AEDB-T2-E1

Wahanga Tapeke: 3310

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Momotae
SQJ960EP-T1_GE3
Vishay Siliconix

SQJ960EP-T1_GE3

Wahanga Tapeke: 77437

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SIA527DJ-T1-GE3
Vishay Siliconix

SIA527DJ-T1-GE3

Wahanga Tapeke: 180836

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SIB912DK-T1-GE3
Vishay Siliconix

SIB912DK-T1-GE3

Wahanga Tapeke: 125137

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI9933CDY-T1-GE3
Vishay Siliconix

SI9933CDY-T1-GE3

Wahanga Tapeke: 185277

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Momotae
SI7942DP-T1-E3
Vishay Siliconix

SI7942DP-T1-E3

Wahanga Tapeke: 63525

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae
SI7922DN-T1-GE3
Vishay Siliconix

SI7922DN-T1-GE3

Wahanga Tapeke: 86516

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Momotae
SI1036X-T1-GE3
Vishay Siliconix

SI1036X-T1-GE3

Wahanga Tapeke: 2514

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 610mA (Ta), Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI7956DP-T1-GE3
Vishay Siliconix

SI7956DP-T1-GE3

Wahanga Tapeke: 44000

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae
SI1024X-T1-GE3
Vishay Siliconix

SI1024X-T1-GE3

Wahanga Tapeke: 185794

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 485mA, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Momotae
SIA918EDJ-T1-GE3
Vishay Siliconix

SIA918EDJ-T1-GE3

Wahanga Tapeke: 171457

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Momotae
SIZ730DT-T1-GE3
Vishay Siliconix

SIZ730DT-T1-GE3

Wahanga Tapeke: 117470

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A, 35A, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Momotae
SQ4940AEY-T1_GE3
Vishay Siliconix

SQ4940AEY-T1_GE3

Wahanga Tapeke: 158519

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI4925DDY-T1-GE3
Vishay Siliconix

SI4925DDY-T1-GE3

Wahanga Tapeke: 189530

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 7.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae
SIRB40DP-T1-GE3
Vishay Siliconix

SIRB40DP-T1-GE3

Wahanga Tapeke: 117423

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Rds Kei (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Momotae
SQ4284EY-T1_GE3
Vishay Siliconix

SQ4284EY-T1_GE3

Wahanga Tapeke: 100159

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SQJQ906EL-T1_GE3
Vishay Siliconix

SQJQ906EL-T1_GE3

Wahanga Tapeke: 63261

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SQJ958EP-T1_GE3
Vishay Siliconix

SQJ958EP-T1_GE3

Wahanga Tapeke: 2544

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Rds Kei (Max) @ Id, Vgs: 34.9 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI7942DP-T1-GE3
Vishay Siliconix

SI7942DP-T1-GE3

Wahanga Tapeke: 63492

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae
SI1967DH-T1-GE3
Vishay Siliconix

SI1967DH-T1-GE3

Wahanga Tapeke: 103126

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI7252DP-T1-GE3
Vishay Siliconix

SI7252DP-T1-GE3

Wahanga Tapeke: 70505

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36.7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Momotae
SQJB42EP-T1_GE3
Vishay Siliconix

SQJB42EP-T1_GE3

Wahanga Tapeke: 152436

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Momotae
SI4228DY-T1-E3
Vishay Siliconix

SI4228DY-T1-E3

Wahanga Tapeke: 190258

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Momotae
SISF00DN-T1-GE3
Vishay Siliconix

SISF00DN-T1-GE3

Wahanga Tapeke: 2608

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Momotae